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NXP Semiconductors MRF300AN-230MHZ
- Part No.:
- MRF300AN-230MHZ
- Manufacturer:
- NXP Semiconductors
- Category:
- RF, RFID, Wireless Evaluation Boards
- Package:
- Datasheet:
-
MRF300AN-230MHZ.pdf
- Description:
- MRF300AN REF BRD 230MHZ 330W
- Quantity:
- Payment:
- Shipping:
Inventory:1,852
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Product details
Overview
MRF300AN-230MHZ from NXP Semiconductors is a high-ruggedness, 50 V, 330 W peak RF power LDMOS transistor optimized for pulsed operation at 230 MHz in industrial, scientific, and medical (ISM) systems. It delivers 20.4 dB power gain and 75.5% drain efficiency under 100 µsec pulse width / 20% duty cycle conditions with 50 Vdc supply and 100 mA quiescent current.
For engineers reviewing the MRF300AN-230MHZ datasheet, MRF300AN-230MHZ pinout, MRF300AN-230MHZ application, or MRF300AN-230MHZ equivalent, this page provides verified performance data, ruggedness validation at >65:1 VSWR, thermal impedance (0.13 °C/W), and fixture-specific matching network guidance for 230 MHz RF amplifier design.
Technical Context
The MRF300AN-230MHZ is characterized in NXP's dedicated 230 MHz test fixture (documented on page 35), operating under pulsed conditions (100 µsec, 20% duty cycle) at 50 Vdc with 100 mA IDQ. Its design supports linear amplification and Class C operation, enabled by integrated ESD protection and extended negative gate–source voltage range.
Thermal performance is validated via junction-to-case thermal impedance ZθJC = 0.13 °C/W under pulsed 330 W peak load, and load mismatch robustness is confirmed at >65:1 VSWR across all phase angles with 6 W peak input overdrive at 230 MHz - no device degradation observed.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency | 230 MHz - Validated operating point in NXP's dedicated test fixture (page 35) |
| Output Power | 330 W peak - Delivered under 100 µsec pulse width, 20% duty cycle, 50 Vdc |
| Power Gain | 20.4 dB - Measured small-signal gain in 230 MHz reference configuration |
| Drain Efficiency | 75.5% - DC-to-RF conversion efficiency at rated output under pulsed conditions |
| VSWR Tolerance | >65:1 at all phase angles - Confirmed ruggedness with 6 W peak input overdrive |
| Thermal Impedance | 0.13 °C/W - Junction-to-case value under pulsed 330 W peak load, critical for heatsink sizing |
| Quiescent Current | 100 mA - IDQ setting used in all 230 MHz characterization, defines bias stability |
Pinout & Package
Package: TO-247-3L (isolated tab). Exposed backside serves as source terminal. Pin 1: Gate, Pin 2: Source, Pin 3: Drain.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Gate) | Control electrode | Accepts DC bias and RF drive; requires stable gate voltage (VGS(Q) = 2.5 V typical) and ESD-safe handling |
| Pin 2 (Source) | Reference node & thermal path | Internally connected to exposed metal tab; must be electrically and thermally tied to system ground/heat sink |
| Pin 3 (Drain) | High-power RF output node | Delivers 330 W peak RF power; requires low-inductance RF output matching network per fixture layout (Fig. 33) |
Key Features
| Feature | Design Value |
|---|---|
| Mirror pinout compatibility | Enables push–pull or two-up configurations with MRF300BN without PCB redesign |
| Integrated ESD protection | Human Body Model Class 2 (2500 V), Charge Device Model Class C3 (1200 V) - reduces external protection circuitry |
| Ruggedness at 230 MHz | Validated >65:1 VSWR tolerance with no degradation - enables reliable operation in mismatched plasma or MRI loads |
| Wide operating voltage range | Characterized from 30 V to 50 V - supports flexible PSU design and headroom margining |
| 15-year longevity program | NXP product longevity assurance - mitigates obsolescence risk in industrial and medical OEM designs |
Applications
| Plasma Etching Systems | MRI RF Power Amplifiers |
|---|---|
Use Scenario: High-power RF excitation of reactive gas plasmas in semiconductor wafer fabrication chambers. IC Role / Device Role / Timing Role: Final-stage RF power amplifier delivering pulsed 230 MHz energy into dynamic, highly reflective plasma loads. Use Value: >65:1 VSWR tolerance ensures uninterrupted operation during plasma ignition transients and impedance shifts. | Use Scenario: Transmit-chain amplification for 230 MHz MRI body coil excitation in 1.5T and 3T systems. IC Role / Device Role / Timing Role: Linear RF power stage generating precise, low-distortion B1 field pulses synchronized to gradient timing. Use Value: 75.5% drain efficiency minimizes heat generation in space-constrained MRI cabinet environments. |
| Industrial Heating Generators | Particle Accelerator Klystron Drivers |
Use Scenario: RF energy delivery to induction heating coils for metal hardening, brazing, or melting at 230 MHz. IC Role / Device Role / Timing Role: High-efficiency CW/pulsed amplifier driving resonant LC tank circuits with variable load Q. Use Value: 330 W peak output enables compact, air-cooled generator designs replacing larger tube-based systems. | Use Scenario: Solid-state driver stage for klystron modulators in linear accelerators requiring precise 230 MHz RF control. IC Role / Device Role / Timing Role: Stable, low-phase-noise amplification stage feeding klystron cathode modulation inputs. Use Value: 20.4 dB gain and thermal impedance of 0.13 °C/W support deterministic thermal management in radiation-hardened enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF300BN-230MHZ | Mirror pinout (Pin 1: Drain, Pin 2: Source, Pin 3: Gate); identical RF specs and ruggedness at 230 MHz | Required for complementary push–pull layouts; not interchangeable without PCB revision | Select MRF300BN-230MHZ only when implementing mirror-symmetry amplifier topologies |
| MRFE6VP6300H | Higher frequency range (up to 600 MHz), higher Pout (600 W CW), but lower gain (19.5 dB at 230 MHz) and higher VDD (65 V) | Better suited for multi-band broadcast or wideband military comms; over-specified for fixed 230 MHz ISM use | Choose MRFE6VP6300H only if future frequency extension beyond 230 MHz or higher CW power is required |
Compared with MRF300BN-230MHZ, the MRF300AN-230MHZ offers direct pin compatibility for single-ended designs and simplifies layout; versus MRFE6VP6300H, it provides optimal cost, thermal, and gain trade-offs specifically for 230 MHz ISM infrastructure where 330 W peak suffices.
Availability
MRF300AN-230MHZ is available at Aetrix Electronics and suitable for industrial plasma etching, MRI RF subsystems, and particle accelerator driver stages requiring stable component supply and long-term manufacturing continuity.
Supply support for MRF300AN-230MHZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and IoT markets, with deep expertise in RF power technologies.
The MRF300AN product line targets high-reliability RF power amplification in HF–VHF industrial, scientific, and medical systems - emphasizing ruggedness, thermal stability, and long-lifecycle support.
FAQ
What is the maximum safe operating frequency for MRF300AN-230MHZ?
The MRF300AN-230MHZ is specifically characterized and validated in NXP's 230 MHz test fixture (page 35 of datasheet). While the broader MRF300AN family operates up to 250 MHz, the MRF300AN-230MHZ variant reflects performance measured at 230 MHz under pulsed conditions - not a frequency limit. Operation outside this point requires full re-characterization using appropriate matching networks.
Does MRF300AN-230MHZ require external gate protection diodes?
No. The MRF300AN-230MHZ integrates ESD protection rated to HBM Class 2 (2500 V) and CDM Class C3 (1200 V), eliminating the need for external gate protection diodes in standard PCB layouts. However, proper grounding of the exposed source tab and controlled gate drive slew rates remain essential for long-term reliability.
How does the thermal impedance of MRF300AN-230MHZ impact heatsink selection?
The MRF300AN-230MHZ exhibits ZθJC = 0.13 °C/W under pulsed 330 W peak load. To maintain junction temperature ≤175°C at TC = 74°C, the total thermal resistance from case to ambient must be ≤0.79 °C/W. This demands a high-performance heatsink with forced-air or liquid cooling - passive solutions are insufficient for sustained operation.
Can MRF300AN-230MHZ be used in CW mode at 230 MHz?
The datasheet does not provide CW performance data for MRF300AN-230MHZ at 230 MHz; all published 230 MHz results (Pout = 330 W, ηD = 75.5%, Gps = 20.4 dB) are for pulsed operation (100 µsec, 20% duty cycle). For CW use at 230 MHz, consult NXP's MRF300AN generic CW curves (e.g., Fig. 6) and derate based on thermal limits - maximum CW output is constrained by RθJC = 0.55 °C/W and PD = 272 W.
Is the MRF300AN-230MHZ footprint compatible with standard TO-247-3L mounting hardware?
Yes. The MRF300AN-230MHZ uses the industry-standard TO-247-3L package (JEDEC TO-247AC) with 2.54 mm lead pitch and 15.8 mm × 20.3 mm body dimensions. Standard TO-247 insulating washers, mica pads, and mounting screws apply - but thermal interface material must accommodate the exposed source tab acting as the primary thermal and electrical return path.
MRF300AN-230MHZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Type:
- Transistor
- Frequency:
- 230MHz
- Contents:
- Board(s)
- Utilized IC / Part:
- MRF300AN
MRF300AN-230MHZ FAQ
1.How can I place an order for MRF300AN-230MHZ through Aetrix?
Please submit a Request for Quotation (RFQ) for MRF300AN-230MHZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MRF300AN-230MHZ reliable?
The price and inventory of MRF300AN-230MHZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRF300AN-230MHZ is usually 5 days.
3.What payment methods are accepted for MRF300AN-230MHZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRF300AN-230MHZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MRF300AN-230MHZ?
MRF300AN-230MHZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MRF300AN-230MHZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MRF300AN-230MHZ?
For technical support, including MRF300AN-230MHZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRF300AN-230MHZ requirements.
6.How does Aetrix verify that MRF300AN-230MHZ is sourced from the original manufacturer or authorized distributors?
All MRF300AN-230MHZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRF300AN-230MHZ meets industry standards.
7.What is the process for return or replacement of MRF300AN-230MHZ?
All MRF300AN-230MHZ units undergo pre-shipment inspection (PSI). If there is an issue with MRF300AN-230MHZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MRF300AN-230MHZ part is unused and in its original packaging.
Return procedure for MRF300AN-230MHZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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