NXP Semiconductors MRF300AN-27MHZ

Overview

MRF300AN-27MHZ from NXP Semiconductors is a 27 MHz reference circuit board built around the MRF300AN 300 W RF power LDMOS transistor, optimized for continuous-wave (CW) operation at 50 Vdc with 330 W output power, 27.4 dB power gain, and 80.0% drain efficiency. It serves as a validated design platform for industrial plasma generation, RF heating, and broadcast amplifier stages.

For engineers reviewing the MRF300AN-27MHZ datasheet, MRF300AN-27MHZ pinout, MRF300AN-27MHZ application, or MRF300AN-27MHZ equivalent, this reference circuit provides verified impedance matching networks (Z_source = 32.13 + j11.22 Ω, Z_load = 4.47 + j0.45 Ω), component-level BOM, layout files, and thermal performance data under 100 mA quiescent drain current.

Technical Context

The MRF300AN-27MHZ implements a single-ended common-source amplifier topology using the MRF300AN in Class AB/C bias, with input/output matching networks designed for 50 Ω systems. It operates at V_DD = 50 Vdc and I_DQ = 100 mA, delivering 330 W CW output at 27 MHz with measured P1dB of 310 W and P3dB of 365 W.

Thermal management relies on the TO-247-3L package's 0.55 °C/W junction-to-case thermal resistance, supported by FR4 PCB (0.087″, 2 oz copper, ε_r = 4.8) and discrete passive components including ATC/Coilcraft/Murata RF chokes, capacitors, and trimming potentiometers for gate voltage fine-tuning.

Key Specifications

Availability

MRF300AN-27MHZ is available at Aetrix Electronics and suitable for industrial plasma etching, RF induction heating, and broadcast transmitter development requiring stable component supply and proven reference designs.

Supply support for MRF300AN-27MHZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with deep expertise in RF power devices.

The MRF300AN-27MHZ belongs to NXP's RF Power LDMOS Transistor Reference Circuit family, engineered to accelerate time-to-market for high-efficiency, rugged HF/VHF amplifiers in ISM, broadcast, and scientific applications.

FAQ

What is the MRF300AN-27MHZ and how does it differ from the MRF300AN transistor?

The MRF300AN-27MHZ is a fully assembled 27 MHz reference circuit board-not a bare transistor-that integrates the MRF300AN RF power LDMOS device with matched input/output networks, biasing, decoupling, and thermal layout. Unlike the standalone MRF300AN (TO-247-3L), the MRF300AN-27MHZ delivers plug-and-play validation for 330 W CW operation at 27 MHz, including measured Z_source/Z_load, component BOM, and Gerber files. It enables rapid prototyping without RF matching design iteration.

Does the MRF300AN-27MHZ include the MRF300AN transistor, and is it pre-mounted?

Yes, the MRF300AN-27MHZ includes one factory-mounted MRF300AN RF power LDMOS transistor in TO-247-3L package (Pin 1: Gate, Pin 2: Source, Pin 3: Drain), soldered to the FR4 PCB per NXP's reference layout (Figure 8). The transistor is integral to the assembly and not user-replaceable without rework; all passive components-including ATC capacitors, Coilcraft inductors, and Vishay resistors-are also populated per Table 12.

What are the key performance metrics of the MRF300AN-27MHZ at its rated frequency?

At 27 MHz, the MRF300AN-27MHZ delivers 330 W CW output power, 27.4 dB power gain (G_ps), and 80.0% drain efficiency (η_D) under V_DD = 50 Vdc and I_DQ = 100 mA conditions (NXP Table 11). Its P1dB is 310 W and P3dB is 365 W, confirming linear headroom for modulated signals. Input return loss exceeds –20 dB across the band, and load mismatch tolerance exceeds VSWR > 65:1 at 230 MHz-indicating robustness inherited from the MRF300AN core.

Can the MRF300AN-27MHZ be used at frequencies other than 27 MHz?

No-the MRF300AN-27MHZ is specifically tuned for 27 MHz operation. Its input/output matching networks (L1–L7, C1–C17) are optimized for Z_source = 32.13 + j11.22 Ω and Z_load = 4.47 + j0.45 Ω at that frequency. Performance degrades significantly outside ±2 MHz due to narrowband LC resonance; NXP provides separate reference circuits for 13.56 MHz (MRF300AN-13MHZ), 40.68 MHz (MRF300AN-40MHZ), and other bands. Re-tuning requires full RF redesign.

What thermal and reliability data apply to the MRF300AN-27MHZ assembly?

The MRF300AN-27MHZ leverages the MRF300AN's 0.55 °C/W junction-to-case thermal resistance and 175 °C max junction temperature rating. Under full 330 W CW operation, case temperature remains ≤76 °C per NXP's thermal test condition (Table 2). The board includes 220 µF/63 V electrolytic bulk capacitance (Panasonic EEU-FC1J221), ferrite bead (Fair-Rite 2743021447), and 2 oz copper planes to sustain thermal stability. NXP's 15-year product longevity program covers both the MRF300AN die and reference circuit support.