NXP Semiconductors MRF372R5

Overview

MRF372R5 from Freescale Semiconductor is an N-channel enhancement-mode lateral RF power MOSFET designed for broadband common-source amplifier applications in 32 V transmitter equipment operating from 470 to 860 MHz. It delivers 180 W PEP output power, 14.5 dB broadband power gain, and 37% drain efficiency at 857–863 MHz with 1 A quiescent drain current. Its robust 3:1 VSWR tolerance and integrated ESD protection support high-reliability CATV headend and broadcast infrastructure amplifiers.

For engineers reviewing the MRF372R5 datasheet, MRF372R5 pinout, MRF372R5 application, or MRF372R5 equivalent, key selection criteria include its 32 V operation, 180 W PEP capability, 0.5 °C/W junction-to-case thermal resistance, RoHS-compliant CASE 375G-04 package, and verified narrowband/broadband two-tone IMD performance down to –31 dBc.

Technical Context

This device operates as a high-power RF amplifier stage in push-pull or single-ended configurations, optimized for 50 Ω systems across UHF CATV bands. Its internally matched design eliminates external input matching networks in reference circuits, while series-equivalent source/load impedance data (e.g., Z_load = 5.28 + j0.43 Ω at 860 MHz) enables precise broadband output network synthesis.

The MRF372R5 uses lateral MOSFET architecture with thermally stable silicon die mounted on a copper-tungsten flange. It supports both narrowband (IDQ = 800 mA) and broadband (IDQ = 1000 mA) biasing schemes, with validated performance under 32 V DC supply and capable of surviving 3:1 VSWR at 90 W CW output without damage.

Key Specifications

Pinout & Package

Package: CASE 375G-04, STYLE 1 - Hermetically sealed ceramic/metal flange package with nickel-iron-cobalt base, optimized for RF grounding and thermal conduction. Dimensions: 34.16 mm × 22.07 mm × 10.31 mm (L × W × H), flange-mount compatible with standard RF heatsinks.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with MRFE6VP61K25H and MRF300AN, the MRF372R5 provides optimal balance of 180 W PEP, –31 dBc IMD, and 37% efficiency specifically validated for 470–860 MHz CATV and broadcast use cases-making it the preferred choice for UHF infrastructure upgrades without GaN system redesign.

Availability

MRF372R5 is available at Aetrix Electronics and suitable for CATV headend amplifiers, digital terrestrial broadcast transmitters, public safety radio repeaters, and wireless cable distribution systems requiring stable component supply and long-term lifecycle support.

Supply support for MRF372R5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Freescale Semiconductor (now part of NXP Semiconductors) is a global leader in RF power solutions, specializing in high-performance silicon and GaN transistors for communications infrastructure.

The MRF372R5 belongs to Freescale's MRF372 family of lateral N-channel RF power MOSFETs, engineered specifically for broadband UHF amplifier applications demanding high linearity, ruggedness, and thermal stability in commercial broadcast and cable systems.

FAQ

What is the maximum continuous drain current rating for the MRF372R5?

The MRF372R5 has a maximum continuous drain current (I_D) rating of 17 A at T_C = 25°C. This rating reflects its capability to sustain high-current RF conduction in pulsed or modulated operation, provided thermal management maintains case temperature ≤150°C and junction temperature ≤200°C. The MRF372R5 achieves this under 32 V DC bias with appropriate heatsinking per its 0.5 °C/W R_θJC.

Does the MRF372R5 require external input matching components?

No-the MRF372R5 is internally matched for 50 Ω systems across its 470–860 MHz operating band, eliminating the need for external input matching networks in standard reference designs. Freescale's published narrowband and broadband circuits (Fig. 2 and Fig. 10) confirm this by omitting input transformers or stubs, relying instead on gate bias network optimization. External matching remains optional for fine-tuning gain flatness or harmonic suppression.

What is the significance of the 'R5' suffix in MRF372R5?

Per Freescale documentation, the 'R5' suffix indicates packaging: MRF372R5 is supplied in tape-and-reel format with 50 units per 56 mm, 13-inch reel. This contrasts with MRF372R3, which contains 250 units per same reel size. Both share identical electrical, thermal, and mechanical specifications-the suffix denotes only quantity-per-reel and associated logistics coding, not functional differentiation.

Can the MRF372R5 operate safely with a 3:1 VSWR load mismatch?

Yes-the MRF372R5 is characterized to handle 3:1 VSWR at 32 V DC, 857 MHz, and 90 W CW output power without degradation or failure. This ruggedness stems from its lateral MOSFET structure, integrated ESD protection, and thermal design allowing safe dissipation of reflected power. It is validated for real-world CATV plant conditions where connector faults or cable damage cause transient mismatches.

What are the recommended gate bias conditions for broadband operation of the MRF372R5?

For broadband operation, Freescale specifies a quiescent drain current (I_DQ) of 1000 mA at V_DD = 32 V DC, corresponding to a gate quiescent voltage (V_GS(Q)) of 2.5–4.5 V DC (typical 3.5 V). This is implemented using the R6/R7/R9 network in Figure 10, with adjustable potentiometer R7 enabling precise I_DQ setting. Stable bias requires low-noise, well-decoupled V_GG supply referenced to source.