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NXP Semiconductors MRF373ALR5
- Part No.:
- MRF373ALR5
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- NI-360
- Datasheet:
-
MRF373ALR5.pdf
- Description:
- RF MOSFET LDMOS 32V NI360
- Quantity:
- Payment:
- Shipping:
Inventory:7,486
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Product details
Overview
MRF373ALR5 from Freescale Semiconductor is an N-channel enhancement-mode lateral RF power MOSFET designed for broadband common-source amplifier applications in 32 V transmitter systems operating from 470 to 860 MHz. It delivers 75 W CW output power at 860 MHz with 18.2 dB power gain and 60% drain efficiency, housed in a NI-360 (Case 360B-05) package with drain-gate-source pinout.
For engineers reviewing the MRF373ALR5 datasheet, MRF373ALR5 pinout, MRF373ALR5 application, or MRF373ALR5 equivalent, this device is critical for UHF CATV headend amplifiers, broadband repeaters, and industrial RF signal generators where high gain, VSWR tolerance (10:1 @ 860 MHz), and thermal stability under sustained CW operation are required.
Technical Context
The MRF373ALR5 employs a lateral DMOS structure optimized for UHF broadband performance, featuring series-equivalent large-signal impedance characterization (Zsource = 0.56 + j0.06 Ω, Zload = 1.65 + j0.22 Ω at 860 MHz) and integrated ESD protection rated Class 1 HBM / M2 MM. Its gate threshold voltage (2.0–4.0 V) and quiescent gate voltage (2.5–4.5 V at IDQ = 100 mA) support stable Class AB biasing in narrowband fixtures.
Thermal design is enabled by a low junction-to-case thermal resistance of 0.89 °C/W and a maximum case temperature rating of 150 °C. The device is characterized for 32 V DC operation with 75 W CW output, and its Ciss (98.5 pF), Coss (49 pF), and Crss (2 pF) values support matching network synthesis for 50 Ω systems across 470–860 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 470–860 MHz - Validated for UHF CATV and wireless infrastructure band operation. |
| Output Power (CW) | 75 W @ 860 MHz, 32 V - Sustained RF power delivery in narrowband transmitter stages. |
| Power Gain | 18.2 dB typical @ 860 MHz - Enables single-stage amplification without cascaded gain blocks. |
| Drain Efficiency | 60% typical @ 75 W CW - Reduces thermal load and DC power supply sizing in 32 V systems. |
| VSWR Tolerance | 10:1 @ 32 V, 860 MHz, 75 W - Survives mismatched antenna loads without damage in deployed equipment. |
| Junction-to-Case Rθ | 0.89 °C/W - Supports heatsink interface design for ≤150 °C case temperature at full power. |
| ESD Rating | HBM Class 1, MM Class M2 - Integrated protection reduces need for external transient suppression. |
Pinout & Package
Package: NI-360 (Case 360B-05), hermetically sealed ceramic/metal flange-mount package with solderable leads and gold-plated terminals (40 μ″ nominal). Dimensions per Issue G: 20.19–20.45 mm × 5.72–5.97 mm × 9.02–9.27 mm (L×W×H).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1. Drain | High-current RF output node | Connected to output matching network and heatsink; carries full RF current and DC bias. |
| 2. Gate | Control electrode | Low-impedance input requiring stable DC bias and RF decoupling; sensitive to ESD. |
| 3. Source | Reference and return path | Common RF/DC ground reference; bonded directly to flange for minimal inductance and thermal path. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated ESD Protection | Class 1 HBM / Class M2 MM - Eliminates need for discrete TVS diodes in gate protection networks. |
| Thermal Stability | 200 °C max junction temperature + 0.89 °C/W RθJC - Enables reliable operation under sustained 75 W CW load with proper heatsinking. |
| Large-Signal Impedance Data | Zsource/Zload provided at 845/860/875 MHz - Accelerates matching network design without iterative EM simulation. |
| 10:1 VSWR Robustness | Rated at 32 V, 75 W CW, 860 MHz - Permits deployment in fielded systems with variable antenna impedance without derating. |
| RoHS Compliance | Lead-free assembly compatible - Meets EU Directive 2011/65/EU for industrial and broadcast equipment. |
Applications
| CATV Headend Amplifier | UHF Wireless Repeater |
|---|---|
Use Scenario: Amplifying downstream 54–860 MHz signals in cable television distribution hubs before fiber or coax distribution. IC Role / Device Role / Timing Role: Final-stage RF power amplifier in Class AB configuration driving 75 Ω trunk lines. Use Value: 75 W CW output and 18.2 dB gain enable single-device amplification of full-band signals without interstage coupling loss. |
Use Scenario: Bidirectional signal boosting in public safety or land mobile radio repeater sites operating at 470–860 MHz. IC Role / Device Role / Timing Role: High-linearity driver stage in transmit chain handling modulated signals with peak-to-average ratios up to 10 dB. Use Value: 60% efficiency minimizes thermal management complexity in outdoor, fanless enclosures. |
| Broadband Signal Generator | Industrial RF Heating Driver |
Use Scenario: Generating calibrated RF test signals for lab-grade spectrum analyzers and receiver sensitivity testing. IC Role / Device Role / Timing Role: Fixed-frequency CW source amplifier in modular test equipment with precision output control. Use Value: Low Crss (2 pF) and stable gain reduce harmonic distortion and improve spectral purity at 860 MHz. |
Use Scenario: Driving resonant tank circuits in dielectric heating systems for plastic welding or food processing. IC Role / Device Role / Timing Role: High-efficiency RF power switch delivering continuous 75 W into reactive loads. Use Value: 10:1 VSWR tolerance ensures uninterrupted operation despite load impedance shifts during material heating cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF373ALSR1 | NI-360S package (Case 360C-05); lower RθJC = 0.63 °C/W; higher PD = 278 W @ 25°C. | Preferred for higher-power-density designs requiring improved thermal dissipation in space-constrained modules. | Select MRF373ALSR1 when heatsink interface area is limited and junction temperature margin must exceed 10°C at 75 W. |
| MRFE6VP61K25H | Later-generation 1.3 kW GaN HEMT; 600–1000 MHz range; requires different bias sequencing and gate drive protection. | Targeted at next-gen broadband infrastructure needing >1 kW peak power and digital predistortion support. | Choose MRFE6VP61K25H only for new designs requiring >10× power scaling and can accommodate revised PCB layout and control firmware. |
Compared with MRF373ALR5, MRF373ALSR1 offers superior thermal performance in the same frequency band but shares identical RF characteristics and pinout; MRFE6VP61K25H enables massive power scaling but demands full system redesign due to GaN-specific gate drive, thermal, and protection requirements.
Availability
MRF373ALR5 is available at Aetrix Electronics and suitable for UHF CATV headend amplifiers, wireless repeater transmitters, and industrial RF heating systems requiring stable component supply and long-term lifecycle support.
Supply support for MRF373ALR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Freescale Semiconductor (now part of NXP Semiconductors) is a global leader in RF power solutions, specializing in high-reliability semiconductor devices for broadcast, industrial, and communications infrastructure.
The MRF373ALR5 belongs to Freescale's legacy LDMOS RF power transistor family, engineered specifically for ruggedized UHF broadband amplifier applications demanding high efficiency, VSWR resilience, and thermal robustness in 32 V systems.
FAQ
What is the maximum drain-source voltage rating for the MRF373ALR5?
The MRF373ALR5 has a maximum drain-source voltage (VDSS) rating of +70 Vdc, with a minimum of –0.5 Vdc. This rating is specified under static conditions and supports safe operation in 32 V transmitter applications with transient voltage margins. The MRF373ALR5 must not be operated beyond these limits to avoid permanent device failure.
Does the MRF373ALR5 require external ESD protection on the gate?
No, the MRF373ALR5 integrates on-die ESD protection rated Class 1 per Human Body Model and Class M2 per Machine Model. While good PCB-level practices (e.g., short gate traces, local decoupling) remain essential, discrete gate protection diodes are not required for standard handling and operation of the MRF373ALR5.
What is the recommended gate bias voltage for Class AB operation of the MRF373ALR5?
The MRF373ALR5 exhibits a gate quiescent voltage (VGS(Q)) of 2.5–4.5 Vdc at VDS = 32 V and IDQ = 100 mA. For stable Class AB operation, a regulated gate bias of 3.3 Vdc (typical) is recommended, with tight tolerance (<±0.1 V) to maintain consistent IDQ and minimize thermal drift across temperature.
Can the MRF373ALR5 be used at frequencies below 470 MHz?
While the MRF373ALR5 is characterized and optimized for 470–860 MHz, it remains functional down to ~100 MHz with reduced gain and efficiency. However, no guaranteed specifications or impedance data are provided below 470 MHz; system validation is required for sub-band use. The MRF373ALR5 is not intended for HF/VHF general-purpose amplification.
Is the MRF373ALR5 RoHS compliant and lead-free?
Yes, the MRF373ALR5 is RoHS compliant per Directive 2011/65/EU and features lead-free terminations with 40 μ″ nominal gold plating on leads. It is qualified for Pb-free reflow soldering processes and meets JEDEC J-STD-020 moisture sensitivity level (MSL) requirements for surface-mount assembly.
MRF373ALR5 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- NI-360
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 860MHz
- Gain:
- 18.2dB
- Voltage - Test:
- 32 V
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- 200 mA
- Power - Output:
- 75W
- Voltage - Rated:
- 70 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- NI-360
MRF373ALR5 FAQ
1.How can I place an order for MRF373ALR5 through Aetrix?
Please submit a Request for Quotation (RFQ) for MRF373ALR5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MRF373ALR5 reliable?
The price and inventory of MRF373ALR5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRF373ALR5 is usually 5 days.
3.What payment methods are accepted for MRF373ALR5?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRF373ALR5 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MRF373ALR5?
MRF373ALR5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MRF373ALR5 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MRF373ALR5?
For technical support, including MRF373ALR5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRF373ALR5 requirements.
6.How does Aetrix verify that MRF373ALR5 is sourced from the original manufacturer or authorized distributors?
All MRF373ALR5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRF373ALR5 meets industry standards.
7.What is the process for return or replacement of MRF373ALR5?
All MRF373ALR5 units undergo pre-shipment inspection (PSI). If there is an issue with MRF373ALR5, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MRF373ALR5 part is unused and in its original packaging.
Return procedure for MRF373ALR5:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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