NXP Semiconductors MRF377HR3

Overview

MRF377HR3 from NXP Semiconductors (formerly Freescale) is an N-channel enhancement-mode lateral RF power MOSFET designed for broadband large-signal common-source amplifier operation in 32 V digital TV transmitter systems. It delivers 45 W average output power at 470–860 MHz under DVBT OFDM (8K, 64 QAM), achieves ≥16.7 dB power gain, ≥21% drain efficiency, and ≤–58 dBc ACPR - optimized for push-pull DTV broadcast final stages.

For engineers reviewing the MRF377HR3 datasheet, MRF377HR3 pinout, MRF377HR3 application, or MRF377HR3 equivalent, key selection criteria include its 32 V operation, 2000 mA quiescent drain current, 10:1 VSWR ruggedness at 45 W CW, internally matched 50 Ω broadband design, and NI-860C3 metal-ceramic package with dual drain terminals.

Technical Context

This device operates as a single-ended, common-source RF power amplifier stage requiring external input/output matching networks optimized for 470–860 MHz. Its internal gate-source and drain-source impedance characterization (e.g., Z_source = 5.79 – j2.40 Ω @ 470 MHz; Z_load = 6.76 – j1.00 Ω @ 470 MHz) enables precise broadband network synthesis for DVBT and ATSC standards.

The MRF377HR3 is strictly rated for push-pull configuration only, with dual drain terminals (Pins 1 & 2) and dual gate terminals (Pins 3 & 4) enabling balanced drive. It features integrated ESD protection (HBM Class 1, MM Class M3), low thermal resistance (R_θJC = 0.27 °C/W at 105 W), and RoHS-compliant 40 μ″ gold plating on leads.

Key Specifications

Pinout & Package

Package: NI-860C3 (Case 375G-04, Style 1), metal-ceramic flange-mount with integral heat sink interface and solderable lid. Dimensions: 34.16 × 22.07 × 10.31 mm (L × W × H), 5-terminal configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRF377HR3, MRF377HR5 offers identical RF performance in larger reels for high-volume manufacturing, while MRFE6VP61K25H targets higher-frequency cellular applications and lacks validated UHF broadcast specifications - making MRF377HR3 the sole qualified solution for 470–860 MHz digital TV transmitter final stages.

Availability

MRF377HR3 is available at Aetrix Electronics and suitable for digital television broadcast transmitters, UHF infrastructure amplifiers, and OFDM signal amplification systems requiring stable component supply and long-term lifecycle support.

Supply support for MRF377HR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and communication markets, with deep heritage in RF power technology from its Freescale acquisition.

The MRF377HR3 belongs to NXP's legacy RF Power LDMOS portfolio, specifically engineered for high-efficiency, high-linearity UHF broadcast amplification in digital television infrastructure - emphasizing ruggedness, thermal stability, and broadband matching capability.

FAQ

What is the maximum continuous drain current rating for the MRF377HR3?

The MRF377HR3 has a maximum continuous drain current (ID) rating of 17 A at TC = 25°C. This rating assumes proper heatsinking and derating above 25°C at 3.7 W/°C. The device is typically operated at IDQ = 2000 mA in Class AB push-pull configurations for digital TV applications, well within its safe operating area.

Can the MRF377HR3 be used in single-ended amplifier configurations?

No - the MRF377HR3 is explicitly designed for push-pull operation only, as stated in its Freescale technical documentation. Its dual drain and dual gate terminals, internal symmetry, and characterization data assume balanced drive. Single-ended use violates the device's design intent and may result in degraded linearity, thermal imbalance, or reliability issues.

What is the thermal resistance junction-to-case for the MRF377HR3?

The MRF377HR3 has a thermal resistance junction-to-case (R_θJC) of 0.27 °C/W when operating at 105 W CW with case temperature at 81°C, and 0.29 °C/W at 45 W CW with case temperature at 77°C. These values are measured per AN1955 methodology and confirm its suitability for high-power-density RF amplifier designs.

Does the MRF377HR3 require external gate resistors for stability?

Yes - although internally matched for broadband impedance, the MRF377HR3 requires external gate stopper resistors (typically 10–22 Ω in series with each gate terminal) to suppress VHF/UHF parasitic oscillations. Application circuits in Freescale's DS1047 and DS1152 reference designs include these resistors as mandatory for stable large-signal operation.

Is the MRF377HR3 still in active production or subject to end-of-life status?

The MRF377HR3 was placed on Lifetime Buy status with last order date of 1 July 2011 and last shipment date of 30 June 2012. Aetrix Electronics maintains legacy inventory and provides traceable, tested units sourced from authorized channels, supporting ongoing maintenance and repair of installed broadcast infrastructure.