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NXP Semiconductors MRF377HR5
- Part No.:
- MRF377HR5
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- NI-860C3
- Datasheet:
-
MRF377HR5.pdf
- Description:
- RF MOSFET LDMOS 32V NI860C3
- Quantity:
- Payment:
- Shipping:
Inventory:3,323
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Product details
Overview
MRF377HR5 from Freescale Semiconductor is an N-channel enhancement-mode lateral RF power MOSFET designed for broadband push-pull amplifier operation in 470–860 MHz digital TV transmitter systems at 32 Vdc. It delivers 45 W average output power (DVBT OFDM), ≥16.7 dB power gain, and ≥21% drain efficiency with ACPR ≤–58 dBc. Its internal matching, 10:1 VSWR ruggedness, and RoHS-compliant NI-860C3 package support high-reliability DTV broadcast final-stage amplification.
For engineers reviewing the MRF377HR5 datasheet, MRF377HR5 pinout, MRF377HR5 application, or MRF377HR5 equivalent, this page provides verified technical context, push-pull–specific operating parameters, thermal resistance (0.27 °C/W), ESD protection class ratings (HBM Class 1), and validated alternatives for 32 V, 470–860 MHz broadband RF power amplifier designs.
Technical Context
This device operates exclusively in push-pull configuration with internally matched input/output impedances optimized for 470–860 MHz broadband DVBT OFDM and ATSC 8VSB modulation. Its lateral LDMOS structure supports 2000 mA quiescent drain current at 32 Vdc, with gate threshold voltage of 2.8 Vdc and drain-source on-resistance of 0.27 Vdc at 3 A.
Thermal design is enabled by low junction-to-case thermal resistance (0.27 °C/W at 105 W CW), case temperature rating of 150 °C, and maximum junction temperature of 200 °C. ESD robustness includes HBM Class 1, MM Class M3, and CDM Class 7 per JEDEC standards.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 470–860 MHz - Validated for DVBT OFDM and ATSC 8VSB broadcast transmission across full UHF band. |
| Output Power (Avg.) | 45 W @ 470–860 MHz, 32 Vdc, IDQ = 2000 mA - Sufficient for single-channel DTV transmitter final stage. |
| Power Gain | ≥16.7 dB @ 470–860 MHz - Enables compact driver-final cascade with minimal gain staging. |
| Drain Efficiency | ≥21% @ 470–860 MHz - Reduces thermal load and power supply requirements in high-duty-cycle OFDM. |
| VSWR Tolerance | 10:1 @ 32 Vdc, 860 MHz, 45 W CW - Ensures survivability under antenna mismatch in deployed transmitters. |
| Thermal Resistance | 0.27 °C/W (Junction-to-Case) - Supports high-power dissipation with standard heatsink mounting. |
| ESD Rating | HBM Class 1, MM Class M3, CDM Class 7 - Provides baseline handling robustness without external protection. |
Pinout & Package
Package: NI-860C3 (Case 375G-04, Style 1), metal-ceramic flange-mount with integrated insulator and lid. Designed for high-frequency thermal and RF grounding via bolt-down flange (recommended bolt center: 1.140 inch / 28.96 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1. Drain | High-current RF power output node | Internally tied to Pin 2; requires low-inductance RF ground path and thermal interface to heatsink. |
| 2. Drain | High-current RF power output node | Electrically common with Pin 1; enables symmetrical push-pull layout and balanced heat spreading. |
| 3. Gate | RF input control terminal | Requires stable bias network; characterized impedance (e.g., 4.66 – j5.90 Ω @ 845 MHz) for broadband matching. |
| 4. Gate | RF input control terminal | Electrically common with Pin 3; supports balanced drive in push-pull configuration. |
| 5. Source | Common reference node | DC and RF return path; must be low-impedance to ground for stability and thermal conduction. |
Key Features
| Feature | Design Value |
|---|---|
| Internally matched I/O | Eliminates need for external broadband matching networks in 470–860 MHz applications. |
| Push-pull only operation | Guarantees optimal linearity and thermal symmetry; not rated for single-ended use. |
| Integrated ESD protection | Meets JEDEC HBM Class 1 (≥500 V), enabling safer handling and reduced board-level protection cost. |
| Low thermal resistance | 0.27 °C/W junction-to-case enables >100 W CW operation with standard heatsinking at TC = 81 °C. |
| Rugged 10:1 VSWR capability | Withstands severe antenna mismatches at full power without degradation or failure. |
Applications
| Digital Terrestrial Television (DTT) Transmitter | Cable Headend Amplifier |
|---|---|
Use Scenario: Final-stage power amplification in 470–860 MHz UHF broadcast transmitters using DVBT OFDM or ATSC 8VSB modulation. IC Role / Device Role / Timing Role: Push-pull configured RF power MOSFET delivering 45–80 W average output power with linearized spectral performance. Use Value: Meets stringent ACPR ≤–58 dBc and IMD ≥–31.3 dBc requirements for regulatory compliance and adjacent-channel interference suppression. |
Use Scenario: High-efficiency broadband amplification in cable television headend distribution systems. IC Role / Device Role / Timing Role: Final-stage RF power transistor operating at 32 Vdc with 2000 mA quiescent current in push-pull topology. Use Value: Delivers ≥27.5% drain efficiency at 80 W avg. output, reducing cooling overhead and energy consumption in 24/7 headend operation. |
| Professional Wireless Video Link | ISM Band Broadband Amplifier |
Use Scenario: High-reliability video backhaul link in broadcast field production using 470–860 MHz licensed spectrum. IC Role / Device Role / Timing Role: Ruggedized RF power amplifier core with 10:1 VSWR tolerance for mobile antenna environments. Use Value: Maintains stable output and linearity under dynamic impedance shifts, preventing signal dropouts during vehicle movement. |
Use Scenario: General-purpose broadband RF power amplification in industrial ISM-band equipment (e.g., plasma generators, RF heating). IC Role / Device Role / Timing Role: High-gain, thermally stable lateral MOSFET supporting continuous-wave operation up to 200 °C junction temperature. Use Value: Enables simplified thermal management with 0.27 °C/W RθJC and RoHS-compliant lead finish (40 μ″ gold plating). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF377HR3 | Identical electrical specs, package, and pinout; documented as direct replacement per PCN13170 and Rev. 2 datasheet revision history. | Same 470–860 MHz DVBT/ATSC use cases; lifetime buy status aligned (last ship Jun 2012). | Select MRF377HR3 when MRF377HR5 is unavailable; no design or layout changes required. |
| MRFE6VP61K25H | Higher P1dB (125 W), wider bandwidth (1.8–2.7 GHz), but requires external matching and different biasing; not internally matched. | Suitable for multi-band base station or radar, not drop-in for UHF DTV due to frequency and matching mismatch. | Choose only for new designs requiring >860 MHz coverage or higher peak power; not a functional substitute for MRF377HR5. |
Compared with MRF377HR5, MRF377HR3 offers identical performance and mechanical compatibility with confirmed availability continuity, while MRFE6VP61K25H serves distinct high-frequency/high-power applications requiring redesign effort and is not suitable for direct substitution in UHF broadcast amplifier layouts.
Availability
MRF377HR5 is available at Aetrix Electronics and suitable for digital terrestrial television transmitters, cable headend amplifiers, professional wireless video links, and ISM-band broadband RF power systems requiring stable component supply and legacy broadcast infrastructure support.
Supply support for MRF377HR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Freescale Semiconductor (now part of NXP Semiconductors) was a leading designer of RF power transistors for broadcast, industrial, and communications infrastructure, emphasizing ruggedness, thermal reliability, and broadband linearity.
The MRF377HR5 belongs to Freescale's MRF377 family of lateral N-channel RF power MOSFETs, engineered specifically for high-efficiency, high-linearity push-pull amplification in UHF digital television transmission equipment.
FAQ
What is the recommended operating condition for MRF377HR5 in DVBT OFDM applications?
MRF377HR5 is characterized at 32 Vdc drain supply, 2000 mA quiescent drain current, and 45 W average output power across 470–860 MHz. It achieves ≥16.7 dB power gain and ≥21% drain efficiency in DVBT OFDM 8K mode with 64-QAM modulation. Biasing must follow push-pull configuration per datasheet Figure 7 and Table 4 gate quiescent voltage (2.5–4.5 Vdc).
Is MRF377HR5 pin-compatible with MRF377HR3?
Yes, MRF377HR5 and MRF377HR3 share identical NI-860C3 package (Case 375G-04, Style 1), pin assignment (Pins 1–2: Drain, Pins 3–4: Gate, Pin 5: Source), and electrical specifications. The Rev. 2 datasheet explicitly states MRF377HR5 was removed per PCN13170 and MRF377HR3 is its documented replacement.
Can MRF377HR5 be used in single-ended amplifier configurations?
No. The MRF377HR5 is explicitly designed for push-pull operation only, as stated in the datasheet features section. Single-ended use violates its characterization, degrades linearity and thermal balance, and voids reliability guarantees. All test data-including impedance, gain, and efficiency-assume balanced push-pull drive.
What is the thermal resistance and maximum junction temperature of MRF377HR5?
MRF377HR5 has a junction-to-case thermal resistance of 0.27 °C/W (measured at 105 W CW, TC = 81 °C) and a maximum operating junction temperature of 200 °C. Its case temperature limit is 150 °C, requiring appropriate heatsinking and airflow to maintain safe operation under sustained 45 W average output conditions.
Does MRF377HR5 include integrated ESD protection, and what are its ratings?
Yes, MRF377HR5 includes integrated ESD protection rated per JEDEC standards: Human Body Model (HBM) Class 1 (≥500 V), Machine Model (MM) Class M3 (≥200 V), and Charge Device Model (CDM) Class 7 (≥1000 V). These ratings are verified in Table 3 and support robust handling during assembly without additional external protection circuitry.
MRF377HR5 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- NI-860C3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 860MHz
- Gain:
- 18.2dB
- Voltage - Test:
- 32 V
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- 2 A
- Power - Output:
- 45W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- NI-860C3
MRF377HR5 FAQ
1.How can I place an order for MRF377HR5 through Aetrix?
Please submit a Request for Quotation (RFQ) for MRF377HR5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MRF377HR5 reliable?
The price and inventory of MRF377HR5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRF377HR5 is usually 5 days.
3.What payment methods are accepted for MRF377HR5?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRF377HR5 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MRF377HR5?
MRF377HR5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MRF377HR5 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MRF377HR5?
For technical support, including MRF377HR5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRF377HR5 requirements.
6.How does Aetrix verify that MRF377HR5 is sourced from the original manufacturer or authorized distributors?
All MRF377HR5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRF377HR5 meets industry standards.
7.What is the process for return or replacement of MRF377HR5?
All MRF377HR5 units undergo pre-shipment inspection (PSI). If there is an issue with MRF377HR5, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MRF377HR5 part is unused and in its original packaging.
Return procedure for MRF377HR5:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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