NXP Semiconductors MRF5P21045NR1

Overview

MRF5P21045NR1 from Freescale Semiconductor is a dual-path, N-channel enhancement-mode lateral RF power MOSFET optimized for 2110–2170 MHz W-CDMA base station amplifiers. It delivers 10 W average RF output power at 28 Vdc with 14.5 dB power gain and 25.5% drain efficiency under 2-carrier W-CDMA conditions (PAR = 8.5 dB, 3.84 MHz channel bandwidth), supporting Doherty, quadrature, and push-pull topologies.

For engineers reviewing the MRF5P21045NR1 datasheet, MRF5P21045NR1 pinout, MRF5P21045NR1 application, or MRF5P21045NR1 equivalent, key selection criteria include its 2110–2170 MHz frequency coverage, dual-gate/dual-drain architecture, 200°C junction rating, 5:1 VSWR ruggedness at 45 W CW, and internal input/output matching for simplified RF layout.

Technical Context

This device integrates two identical laterally diffused MOSFETs in a single TO-270 WB-4 (Case 1486-03) package, each with independently accessible gate and drain terminals and a common source terminal on the exposed backside. Its series-equivalent large-signal impedance parameters are characterized for 2110–2220 MHz, enabling precise external matching network design in single-ended or combined configurations.

The MRF5P21045NR1 operates with V_GS(Q) = 3.8 Vdc at I_DQ = 500 mA and V_DD = 28 Vdc, supports up to 32 Vdc drain supply, and features integrated ESD protection rated Class 1C (HBM), Class A (MM), and Class IV (CDM). Thermal resistance R_θJC is 1.35°C/W at 45 W CW (case temp 80°C).

Key Specifications

Pinout & Package

Package: TO-270 WB-4 (Case 1486-03), plastic overmolded with exposed copper heat slug (source terminal). Dimensions: 18.08 × 14.00 × 4.17 mm (L×W×H), 5-terminal surface-mountable package with 2 drain leads, 2 gate leads, and 1 common source connection via backside metal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRF5P21045NR1, the MRFE6VP61K25HR5 offers higher peak power but demands more complex thermal management, while the BLF278 provides comparable frequency and voltage specs in the same package but lacks integrated dual-path functionality-requiring external circuitry to replicate MRF5P21045NR1's Doherty-ready architecture.

Availability

MRF5P21045NR1 is available at Aetrix Electronics and suitable for W-CDMA base station development, TDMA/CDMA macrocell amplifier builds, and Doherty PA module prototyping requiring stable component supply and long-lifecycle support.

Supply support for MRF5P21045NR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Freescale Semiconductor (now part of NXP Semiconductors) is a global leader in RF power solutions, specializing in high-voltage LDMOS technology for wireless infrastructure.

The MRF5P21045NR1 belongs to Freescale's MRF5P family of dual-path RF power transistors, engineered specifically for energy-efficient, linear, multi-standard 3G base station amplifiers operating in the 2–2.2 GHz band.

FAQ

What is the maximum continuous drain voltage rating for the MRF5P21045NR1?

The MRF5P21045NR1 has a maximum drain-source voltage (V_DSS) rating of +65 Vdc and -0.5 Vdc. This allows safe operation up to 32 Vdc drain supply as qualified, with margin for transient spikes in base station power rails. The absolute maximum rating ensures reliability under worst-case switching and mismatch conditions encountered in deployed RF power amplifiers.

Does the MRF5P21045NR1 require external matching networks?

Yes, the MRF5P21045NR1 is internally matched but still requires external input and output matching networks to achieve optimal 2110–2170 MHz performance. Its series-equivalent source and load impedances (e.g., Z_source = 6.28 − j7.71 Ω at 2140 MHz) are provided to guide custom microstrip or lumped-element network design for specific PA topologies like Doherty or quadrature.

How is thermal management handled for the MRF5P21045NR1?

The MRF5P21045NR1 uses an exposed copper heat slug (Pin 5 and backside) as the common source terminal, requiring direct soldering to a thermally enhanced PCB ground plane. With R_θJC = 1.35°C/W at 45 W CW, effective heatsinking maintains junction temperature ≤200°C. Freescale recommends bolt-down or reflow attach per AN1907 and AN3263 for production reliability.

Can the MRF5P21045NR1 be used in single-ended configuration?

Yes, the MRF5P21045NR1 is fully characterized and validated for single-ended operation, as shown in Table 6 and Figure 2 of its datasheet. One path (e.g., Gate A/Drain A) can be biased and driven while the other is terminated, enabling flexible reuse in lower-power designs without redesigning the core RF layout.

What ESD protection level does the MRF5P21045NR1 provide?

The MRF5P21045NR1 includes integrated ESD protection rated to Class 1C per JESD22-A114 (HBM ≥1 kV), Class A per EIA/JESD22-A115 (MM), and Class IV per JESD22-C101 (CDM). This eliminates the need for external TVS diodes in most board-level handling and assembly scenarios, though system-level ESD remains the responsibility of the end application design.