NXP Semiconductors MRF5P21180HR5

Overview

MRF5P21180HR5 from NXP Semiconductors (formerly Freescale) is an N-channel enhancement-mode lateral RF power MOSFET designed for W-CDMA base station final-stage amplification in the 2110–2170 MHz band. It delivers 38 W average output power at 28 V, 1600 mA quiescent drain current, with 14 dB power gain and 25.5% drain efficiency under 2-carrier W-CDMA conditions (3.84 MHz channel bandwidth, PAR = 8.5 dB @ 0.01% CCDF).

For engineers reviewing the MRF5P21180HR5 datasheet, MRF5P21180HR5 pinout, MRF5P21180HR5 application, or MRF5P21180HR5 equivalent, this device is selected for high-linearity, high-efficiency RF power amplification in cellular infrastructure where ACPR (–41 dBc @ ±5 MHz), IM3 (–37.5 dBc @ ±10 MHz), and 10:1 VSWR tolerance are critical design requirements.

Technical Context

This LDMOS transistor operates in Class AB configuration with internally matched input and output impedances (e.g., Z_source = 5.53 – j14.51 Ω at 2140 MHz; Z_load = 3.81 – j10.66 Ω), enabling simplified broadband matching network design for multicarrier W-CDMA, TDMA, and CDMA systems. Its gate threshold voltage is 2.5–3.5 V, and it supports stable operation up to 32 V_DD.

Thermal performance is optimized via low junction-to-case thermal resistance (0.31 °C/W at 180 W CW, T_C = 80 °C), and ESD protection meets HBM Class 2, MM Class M3, and CDM Class C7 standards. The device is qualified for continuous operation at T_J ≤ 200 °C and T_C ≤ 150 °C.

Key Specifications

Pinout & Package

Package: Case 375D-05, Style 1 (NI-1230), flanged ceramic/metal package with solderable lid and insulated base. Dimensions: 41.02 × 10.03 × 5.08 mm (L × W × H), bolt-down mounting (M3 screw, 1.52″ bolt center).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRF5P21180HR5, the MRF5P21180HR6 offers identical RF performance and ruggedness but differs only in tape-and-reel packaging compliance; the AFM35H180--210 trades 8 W average power and 30 MHz bandwidth for marginally better peak handling-making MRF5P21180HR5 the optimal choice for full-band W-CDMA macrocell PA design.

Availability

MRF5P21180HR5 is available at Aetrix Electronics and suitable for W-CDMA base station transmitters, TDMA/CDMA multicarrier amplifiers, and wireless local loop (WLL) systems requiring stable component supply, long-lifecycle support, and RoHS-compliant RF power devices.

Supply support for MRF5P21180HR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and communications markets. Formerly Freescale Semiconductor, it acquired the RF Power portfolio in 2015.

The MRF5P21180HR5 belongs to NXP's high-power LDMOS transistor family, engineered specifically for cellular infrastructure applications demanding high efficiency, linearity, and ruggedness in 3G/4G macrocell and microcell base station power amplifiers.

FAQ

What is the maximum continuous drain current rating for the MRF5P21180HR5?

The MRF5P21180HR5 is rated for total device dissipation of 530 W at T_C = 25°C, derated at 3.0 W/°C above that temperature. Its maximum continuous drain current depends on operating voltage and thermal management-but under typical 28 V, 1600 mA quiescent bias (IDQ), it sustains 38 W average RF output. Absolute maximum drain-source voltage is +65 Vdc, and gate-source voltage is limited to +15 Vdc.

Does the MRF5P21180HR5 require external matching networks?

The MRF5P21180HR5 is internally matched for ease of use, with characterized series-equivalent source and load impedances (e.g., Z_source = 5.53 – j14.51 Ω at 2140 MHz). While not fully "matchless," it significantly simplifies external matching-especially in push-pull configurations-reducing component count and layout sensitivity compared to unmatched RF transistors. Full matching still requires external network optimization per application.

What is the thermal resistance junction-to-case for the MRF5P21180HR5?

The MRF5P21180HR5 has a thermal resistance of 0.31 °C/W (junction-to-case) when operating at 180 W CW with case temperature maintained at 80°C, and 0.33 °C/W at 38 W CW with case temperature at 71°C. This low R_θJC enables high-power density operation and supports reliable thermal design using standard heatsink interfaces and mounting hardware.

Is the MRF5P21180HR5 RoHS compliant and lead-free?

Yes, the MRF5P21180HR5 is RoHS compliant and features lead-free finish. Its leads have a nominal gold plating thickness of 40 µ″, and the device ships in tape-and-reel packaging conforming to RoHS Directive 2011/65/EU. All materials and processes meet NXP's environmental compliance standards for industrial and telecom infrastructure applications.

Can the MRF5P21180HR5 be used in Class C or switching-mode RF amplifiers?

No-the MRF5P21180HR5 is characterized and qualified for Class AB operation in linear amplification applications such as W-CDMA and multicarrier systems. Its gate threshold voltage (2.5–3.5 V), transconductance (5 S typ.), and thermal design are optimized for analog biasing and linearity-not hard switching. Using it in Class C risks distortion, instability, and accelerated degradation due to uncharacterized switching stress and thermal cycling.