NXP Semiconductors MRF5P21180HR6

Overview

MRF5P21180HR6 from Freescale Semiconductor is an N-channel enhancement-mode lateral RF power MOSFET designed for W-CDMA base station final-stage amplification at 2110–2170 MHz. It delivers 38 W average output power with 14 dB power gain and 25.5% drain efficiency under 28 Vdc, 1600 mA quiescent bias in dual-carrier W-CDMA operation, targeting macrocell and microcell infrastructure transmitters.

For engineers reviewing the MRF5P21180HR6 datasheet, MRF5P21180HR6 pinout, MRF5P21180HR6 application, or MRF5P21180HR6 equivalent, key selection criteria include its 2140 MHz small-signal impedance matching (Z_source = 5.53 − j14.51 Ω, Z_load = 3.81 − j10.66 Ω), 10:1 VSWR ruggedness at 180 W CW, and RoHS-compliant NI-1230 package with integrated ESD protection per HBM Class 2.

Technical Context

This device operates in Class AB for linear multicarrier amplification, with gate threshold voltage of 2.5–3.5 Vdc and quiescent gate voltage of 3.6 Vdc at 28 Vdc drain supply and 1600 mA IDQ. Its internally matched input/output enables simplified broadband design without external tuning networks across the 2110–2170 MHz band.

Thermal performance is defined by a 0.31 °C/W junction-to-case thermal resistance at 180 W CW, supporting operation up to 150 °C case temperature and 200 °C junction temperature. The device is characterized using series-equivalent large-signal impedance parameters and qualified for up to 32 Vdd operation.

Key Specifications

Pinout & Package

Package: NI-1230 (Case 375D-05, Style 1), flanged ceramic/metal hermetic package with solderable lid and insulated base. Dimensions: 41.02 × 10.03 × 5.08 mm (L × W × H), bolt-down mounting via 1.52″ center spacing (M3 screw).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRF5P21180HR6, the MRF5P21190HR6 offers +7 W avg. output within identical thermal and mechanical constraints, whereas PD57018-E provides comparable RF performance but mandates full layout rework due to incompatible package and terminal configuration.

Availability

MRF5P21180HR6 is available at Aetrix Electronics and suitable for W-CDMA base station transmitters, TDMA/CDMA infrastructure amplifiers, and wireless local loop (WLL) systems requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for MRF5P21180HR6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Freescale Semiconductor (now part of NXP Semiconductors) was a leading designer of RF power transistors for wireless infrastructure, emphasizing ruggedness, linearity, and thermal reliability in macrocell and microcell applications.

The MRF5P21180HR6 belongs to Freescale's MRF5P family of laterally diffused MOSFETs engineered specifically for high-efficiency, high-linearity 3G/4G base station power amplification in the 2–2.2 GHz band.

FAQ

What is the maximum continuous drain current rating for the MRF5P21180HR6?

The MRF5P21180HR6 does not specify a maximum continuous drain current rating directly; instead, it defines safe operating limits via total device dissipation (530 W at TC = 25°C, derated 3.0 W/°C above), junction temperature (200 °C), and case temperature (150 °C). Under typical 28 Vdc, 1600 mA IDQ operation, the MRF5P21180HR6 sustains 38 W average RF output with verified thermal margin per AN1955 methodology.

Does the MRF5P21180HR6 require external matching components for 2140 MHz operation?

No, the MRF5P21180HR6 is internally matched for 2110–2170 MHz operation, and Freescale provides series-equivalent source and load impedances (e.g., Z_source = 5.53 − j14.51 Ω at 2140 MHz) to guide external network design. While not fully "matchless," it eliminates discrete resonant matching elements, enabling compact, broadband layouts as shown in Figure 1 of the MRF5P21180HR6 datasheet.

What is the gate threshold voltage range for the MRF5P21180HR6?

The gate threshold voltage (V_GS(th)) for the MRF5P21180HR6 is specified as 2.5 Vdc minimum, 2.8 Vdc typical, and 3.5 Vdc maximum, measured at V_DS = 10 Vdc and I_D = 200 µAdc. This range ensures consistent turn-on behavior across process variation and supports stable Class AB biasing at the typical V_GS(Q) of 3.6 Vdc under 28 Vdc, 1600 mA operating conditions.

Can the MRF5P21180HR6 be used in pulsed RF applications?

Yes, the MRF5P21180HR6 supports pulsed CW operation, as demonstrated in Figure 7 of its datasheet: at 28 Vdc, 1600 mA IDQ, and 8 µs pulse width (1 ms period), it achieves 53.72 dBm (236 W) P3dB output. Pulse operation leverages its low thermal resistance and rugged VSWR tolerance, making it suitable for radar and burst-mode wireless systems where peak power exceeds average ratings.

Is the MRF5P21180HR6 RoHS compliant and lead-free?

Yes, the MRF5P21180HR6 is RoHS compliant, as confirmed in the datasheet revision history (Rev. 3, Oct. 2008), which notes updated RoHS-compliant part numbers in Table 5. Its construction uses lead-free terminations and complies with Directive 2011/65/EU, with gold plating thickness on leads specified at 40 µ″ nominal - compatible with standard Pb-free reflow profiles.