NXP Semiconductors MRF5S19060NBR1

Overview

MRF5S19060NBR1 from Freescale Semiconductor is an N-channel enhancement-mode lateral RF power MOSFET designed for large-signal, common-source amplifier applications in 28 V base station equipment operating at 1930–1990 MHz. It delivers 12 W average output power with 14 dB power gain and 23% drain efficiency under 2-carrier N-CDMA conditions (1990 MHz, PAR = 9.8 dB), and supports 5:1 VSWR tolerance at 12 W CW.

For engineers reviewing the MRF5S19060NBR1 datasheet, MRF5S19060NBR1 pinout, MRF5S19060NBR1 application, or MRF5S19060NBR1 equivalent, key selection criteria include broadband N-CDMA linearity (IM3 = –37 dBc, ACPR = –51 dBc), thermal robustness (T_J = 200°C, R_θJC = 0.80°C/W), and RoHS-compliant lead-free TO-270 WB-4 plastic packaging.

Technical Context

This device operates as a laterally diffused MOSFET optimized for high-efficiency, high-linearity RF power amplification in cellular infrastructure. Its internally matched 50 Ω input/output design eliminates external matching networks across 1930–1990 MHz, and series-equivalent impedance data (e.g., Z_source = 2.50 – j2.85 Ω at 1990 MHz) enables precise external network synthesis.

It features integrated ESD protection rated Class 1C (HBM), Class C (MM), and Class IV (CDM), and is characterized for stable operation under pulsed CW (8 μs on, 1% duty cycle) and continuous 2-carrier N-CDMA signals. Thermal performance is validated per AN1955, with MTTF modeling supported by junction temperature-dependent lifetime curves.

Key Specifications

Pinout & Package

Package: TO-270 WB-4 (Case 1486-03, Style 1), 200°C-capable plastic package with lead-free (N suffix) RoHS-compliant terminations. Pin numbering per Rev. 7 datasheet: Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source, Pin 4 = Source (tied internally to Pin 3).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with MRF5S19060NBR1, the MRFE6VP61K25HR5 offers higher power and bandwidth at the cost of increased bias complexity and thermal design overhead, while the PD57060 provides greater output headroom and lower thermal resistance but demands full external impedance matching-making MRF5S19060NBR1 optimal for rapid, cost-sensitive PCS band deployments.

Availability

MRF5S19060NBR1 is available at Aetrix Electronics and suitable for cellular base station transmitters, PCS band repeaters, public safety radio infrastructure, and fixed wireless access units requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for MRF5S19060NBR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Freescale Semiconductor (now part of NXP Semiconductors) is a global leader in RF power solutions, specializing in high-reliability semiconductor devices for wireless infrastructure and industrial applications.

The MRF5S19060NBR1 belongs to Freescale's MRF5S family of laterally diffused MOSFETs, engineered specifically for broadband, high-linearity, high-efficiency RF power amplification in 28 V cellular base station equipment.

FAQ

What is the gate threshold voltage specification for MRF5S19060NBR1?

The gate threshold voltage (V_GS(th)) for MRF5S19060NBR1 is specified as 2.5–3.5 Vdc at V_DS = 10 Vdc and I_D = 225 μAdc. This range ensures reliable turn-on behavior in Class AB bias configurations, and the typical gate quiescent voltage (V_GS(Q)) is 3.8 Vdc at V_DS = 28 Vdc and I_DQ = 750 mAdc-critical for setting stable idle current in the MRF5S19060NBR1 amplifier stage.

Does MRF5S19060NBR1 require external matching networks?

No, MRF5S19060NBR1 is internally matched for 50 Ω operation across its full 1930–1990 MHz frequency range. The datasheet provides series-equivalent source and load impedances (e.g., Z_source = 2.50 – j2.85 Ω at 1990 MHz) to guide optional fine-tuning, but the MRF5S19060NBR1 can be deployed with minimal external components in standard 50 Ω systems.

What is the maximum junction temperature rating for MRF5S19060NBR1?

The maximum operating junction temperature for MRF5S19060NBR1 is 200°C, verified per Freescale's thermal characterization methodology (AN1955). This rating, combined with R_θJC = 0.80°C/W, allows the MRF5S19060NBR1 to sustain 12 W average output power with controlled thermal rise when mounted on appropriately sized heatsinks.

How does MRF5S19060NBR1 perform under 2-carrier N-CDMA conditions?

Under standardized 2-carrier N-CDMA test conditions (V_DD = 28 V, I_DQ = 750 mA, P_out = 12 W avg., 1990 MHz), the MRF5S19060NBR1 achieves 14 dB power gain, 23% drain efficiency, –37 dBc IM3 distortion (at ±2.5 MHz offset), and –51 dBc ACPR (at ±885 kHz offset)-fully meeting IS-95 spectral emission requirements without digital predistortion.

Is MRF5S19060NBR1 RoHS compliant and lead-free?

Yes, MRF5S19060NBR1 carries the "N" suffix, indicating lead-free terminations and full compliance with RoHS Directive 2011/65/EU. Its TO-270 WB-4 plastic package (Case 1486-03) uses environmentally compliant materials without sacrificing thermal or electrical performance relative to legacy versions.