NXP Semiconductors MRF6P24190HR6

Overview

MRF6P24190HR6 from Freescale Semiconductor is an N-channel enhancement-mode lateral RF power MOSFET designed for high-efficiency, high-power amplification at 2450 MHz. It delivers 190 W CW output power at 28 Vdc with 13.2 dB power gain and 46.2% drain efficiency under typical conditions (IDQ = 1900 mA), and is internally matched for simplified integration into industrial, scientific, and medical RF power stages.

For engineers reviewing the MRF6P24190HR6 datasheet, MRF6P24190HR6 pinout, MRF6P24190HR6 application, or MRF6P24190HR6 equivalent, key selection criteria include its 225°C maximum junction temperature, 68 Vdc drain-source voltage rating, NI-1230 (Case 375D-05) package with dual drain terminals, ESD protection class compliance (HBM 1C, MM A, CDM III), and proven 10:1 VSWR ruggedness at 2340 MHz.

Technical Context

This device operates as a large-signal RF power amplifier stage in Class AB or Class C configurations, optimized for fixed-frequency 2450 MHz ISM-band applications. Its internal input/output matching network eliminates external tuning components for fundamental frequency operation, while series-equivalent large-signal impedance data (Zsource = 12.72 − j8.48 Ω, Zload = 2.75 − j4.85 Ω at 2450 MHz) enables precise external harmonic termination design.

The MRF6P24190HR6 features integrated ESD protection across gate and drain terminals, supports up to 32 Vdc supply operation (derated above 25°C), and maintains stable performance under mismatched load conditions - demonstrated by reliable 190 W CW operation at 10:1 VSWR. Thermal resistance RθJC is 0.22°C/W at 100°C case temperature and 160 W CW.

Key Specifications

Pinout & Package

Package: NI-1230 (Case 375D-05, Style 1), hermetically sealed ceramic/metal flange-mount package with integral heatsink base. Dimensions: 41.28 mm × 10.29 mm × 5.08 mm (L × W × H); flange bolt center 38.61 mm; 5-terminal configuration with dual drain leads for current sharing and thermal spreading.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with CGHV1J006D and MRF6S24190HR6, the MRF6P24190HR6 offers the highest CW output power (190 W) in this family at 2450 MHz, with lowest thermal resistance (0.22°C/W), making it optimal for cost-sensitive, high-power industrial systems where absolute peak output-not bandwidth or ultra-high reliability-is the primary requirement.

Availability

MRF6P24190HR6 is available at Aetrix Electronics and suitable for industrial heating, medical diathermy, scientific plasma generation, and ISM-band RF lighting applications requiring stable component supply and proven high-power RF performance.

Supply support for MRF6P24190HR6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Freescale Semiconductor (now part of NXP Semiconductors since 2015) was a leading designer of RF power transistors, specializing in LDMOS technology for high-efficiency, high-reliability RF amplification.

The MRF6P24190HR6 belongs to Freescale's MRF6P family of lateral N-channel RF power MOSFETs, engineered specifically for fixed-frequency, high-power ISM-band applications demanding ruggedness, thermal stability, and simplified matching.

FAQ

What is the maximum continuous drain-source voltage rating for the MRF6P24190HR6?

The MRF6P24190HR6 has a maximum drain-source voltage (VDSS) rating of +68 Vdc, with a minimum of –0.5 Vdc. This rating applies under all operating conditions and defines the absolute upper limit for DC supply voltage and transient voltage spikes. Exceeding +68 Vdc risks permanent device failure, even momentarily. The MRF6P24190HR6 is typically operated at 28 Vdc for 190 W output, with qualification up to 32 Vdc under derated conditions.

Does the MRF6P24190HR6 require external matching networks for 2450 MHz operation?

No, the MRF6P24190HR6 is internally matched for 2450 MHz operation in a 50 Ω system. Its input and output impedances are pre-tuned (Zsource = 12.72 − j8.48 Ω, Zload = 2.75 − j4.85 Ω), enabling direct integration into standard microstrip layouts without discrete matching components at the fundamental frequency. External harmonic filtering remains necessary for spectral compliance.

What is the thermal resistance junction-to-case (RθJC) for the MRF6P24190HR6, and how is it measured?

The MRF6P24190HR6 has a thermal resistance junction-to-case (RθJC) of 0.22°C/W when operated at 160 W CW with case temperature at 100°C. This value is measured per AN1955 (Thermal Measurement Methodology of RF Power Amplifiers) using calibrated thermocouples on the package flange and junction temperature derived from forward-voltage monitoring of the intrinsic body diode. Lower RθJC enables more efficient heat extraction in high-power designs.

Can the MRF6P24190HR6 withstand high VSWR loads, and what is the validated limit?

Yes, the MRF6P24190HR6 is validated to withstand 10:1 VSWR at 2340 MHz, 28 Vdc, and 190 W CW output power without degradation or failure. This ruggedness stems from its lateral MOSFET structure, integrated ESD protection, and robust gate oxide design. It is intended for use in systems where antenna mismatch, filter drift, or plasma load variation may occur - such as industrial heating or plasma reactors.

What packaging and reel format does the MRF6P24190HR6 ship in?

The MRF6P24190HR6 ships in the NI-1230 (Case 375D-05) hermetic ceramic/metal package, mounted on tape-and-reel with the "R6" suffix indicating 150 units per 56 mm width, 13-inch diameter reel. The package uses gold-plated leads and is RoHS compliant. Reel packaging supports automated pick-and-place assembly in high-volume RF power module production.