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NXP Semiconductors MRF6P27160HR6
- Part No.:
- MRF6P27160HR6
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- NI-1230
- Datasheet:
-
MRF6P27160HR6.pdf
- Description:
- RF MOSFET LDMOS 28V NI1230
- Quantity:
- Payment:
- Shipping:
Inventory:4,815
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Product details
Overview
MRF6P27160HR6 from Freescale Semiconductor is an N-channel enhancement-mode lateral RF power MOSFET designed for 2600–2700 MHz base station amplifiers. It delivers 35 W average output power at 28 V, achieves 14.6 dB power gain and 22.6% drain efficiency under single-carrier N-CDMA conditions (2660 MHz), and supports Class AB/C operation in WLL systems.
For engineers reviewing the MRF6P27160HR6 datasheet, MRF6P27160HR6 pinout, MRF6P27160HR6 application, or MRF6P27160HR6 equivalent, key selection criteria include its 225°C maximum junction temperature, 10:1 VSWR ruggedness at 160 W CW, internally matched 50 Ω input/output impedance, and RoHS-compliant NI-1230 package with dual drain terminals.
Technical Context
This device operates as a high-efficiency RF power amplifier stage in broadband wireless infrastructure. Its lateral LDMOS structure enables wide instantaneous bandwidth, low memory effects, and stable performance across 2600–2700 MHz with characterized series-equivalent source/load impedances (e.g., Zsource = 5.31 + j1.58 Ω at 2660 MHz).
It features integrated ESD protection (HBM Class 1C, MM Class A, CDM Class III), is qualified for up to 32 VDD, and uses internal matching networks to simplify external circuit design-verified via Freescale's standardized test fixture with microstrip-based impedance transformation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 2600–2700 MHz - supports full-band CDMA/WiMAX/WiBro base station operation without retuning. |
| Output Power (Avg.) | 35 W @ 2660 MHz, 28 V, 1800 mA - meets IS-95 N-CDMA spectral mask requirements with 9.8 dB PAR. |
| Power Gain | 14.6 dB typical - enables compact driver-stage architecture with minimal cascaded stages. |
| Drain Efficiency | 22.6% @ 35 W avg. - reduces thermal load and heatsink size in densely packed RF modules. |
| VSWR Tolerance | 10:1 @ 2650 MHz, 28 V, 160 W CW - ensures survivability during antenna mismatch events in deployed systems. |
| Junction Temperature | 225°C max - allows high-power operation with conservative derating for >1 million-hour MTTF at 150°C case temp. |
| ESD Rating | HBM Class 1C (≥2 kV), MM Class A (≥200 V), CDM Class III - supports robust handling in automated assembly lines. |
Pinout & Package
Package: NI-1230 (Case 375D-05, Style 1), ceramic/metal flange-mount with solderable lid and insulated base. Dimensions: 41.28 × 10.29 × 5.08 mm (L×W×H), 5-terminal configuration with dual drain leads for current sharing and thermal spreading.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2 | Drain | Dual parallel drain connections reduce lead inductance and improve thermal conduction to heatsink. |
| 3, 4 | Gate | Balanced gate inputs support push-pull configurations and suppress common-mode oscillation. |
| 5 | Source | Common-source reference point; electrically tied to flange for low-inductance grounding path. |
Key Features
| Feature | Design Value |
|---|---|
| Internally matched | Eliminates need for external input/output matching networks in 50 Ω systems-reduces BOM count and layout sensitivity. |
| Lateral LDMOS structure | Delivers wide instantaneous bandwidth (>100 MHz) and lower memory effects versus vertical MOSFETs-critical for multicarrier WCDMA/WiMAX linearity. |
| Rugged 10:1 VSWR rating | Withstands severe antenna mismatches at full 160 W CW without degradation-enables field-deployed reliability without circulators. |
| Integrated ESD protection | Meets JESD22-A114/115/C101 standards-removes need for discrete ESD diodes in front-end PCB routing. |
| RoHS-compliant tape-and-reel | R6 suffix = 150 units per 56 mm, 13-inch reel-supports high-volume SMT assembly with IPC/JEDEC-compliant packaging. |
Applications
| CDMA Base Station PA | WiMAX/WiBro Transmitter |
|---|---|
|
Use Scenario: Final-stage power amplifier in 2600–2700 MHz macrocell base stations supporting IS-95/N-CDMA traffic channels. IC Role / Device Role / Timing Role: High-efficiency RF power transistor operating in Class AB mode with 35 W avg. output and -47.8 dBc ACPR. Use Value: Enables compliant spectral emission without external predistortion, reducing system complexity and calibration overhead. |
Use Scenario: Linear power amplifier in fixed WiMAX CPE and WiBro base transceivers requiring broadband 2.5–2.7 GHz coverage. IC Role / Device Role / Timing Role: Single-carrier or multicarrier amplifier delivering 35 W avg. with <15 dB small-signal gain flatness over 100 MHz bandwidth. Use Value: Supports 64-QAM modulation fidelity with measured IMD <−45 dBc at 70 W PEP-meets IEEE 802.16d spectral mask. |
| WLL Point-to-Multipoint | Multi-Carrier Amplifier |
|
Use Scenario: High-reliability outdoor unit (ODU) amplifier in 2.6 GHz wireless local loop systems with Class C operation. IC Role / Device Role / Timing Role: Switch-mode RF power device delivering 160 W CW output with 10:1 VSWR tolerance and 225°C junction rating. Use Value: Survives harsh environmental mismatches and enables >10-year field life without active VSWR protection circuitry. |
Use Scenario: Driver or final-stage amplifier in multicarrier Doherty architectures for LTE/WCDMA macrocells. IC Role / Device Role / Timing Role: Laterally diffused MOSFET optimized for wide instantaneous bandwidth and low memory effects across 2600–2700 MHz. Use Value: Reduces digital predistortion (DPD) complexity by maintaining <0.5 dB gain ripple and stable phase response over 100 MHz signal bandwidth. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NXP MRFE6VP6300HR5 | Higher P1dB (300 W PEP), 68 V rating, but narrower 2500–2700 MHz bandwidth and no internal matching. | Requires external matching networks; better suited for pulsed radar than continuous CDMA/WiMAX. | Select when higher peak power and voltage headroom are needed, and matching network design resources are available. |
| Qorvo QPD1025 | Same 2600–2700 MHz band, GaN-on-SiC process, 35 W avg. output, but 28 V only (no 32 V rating) and no documented 10:1 VSWR validation. | Offers higher efficiency (35%) but lacks published ruggedness data for antenna mismatch scenarios. | Prefer for efficiency-critical indoor small cells where thermal management dominates over field reliability concerns. |
Compared with MRF6P27160HR6, the MRFE6VP6300HR5 trades ease of use for higher peak capability, while the QPD1025 improves efficiency at the cost of proven VSWR ruggedness-making MRF6P27160HR6 the optimal choice for carrier-grade outdoor base stations demanding both linearity and survivability.
Availability
MRF6P27160HR6 is available at Aetrix Electronics and suitable for CDMA base station PA, WiMAX transmitter, and WLL point-to-multipoint applications requiring stable component supply, long-lifecycle support, and RoHS-compliant manufacturing.
Supply support for MRF6P27160HR6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Freescale Semiconductor (now part of NXP Semiconductors) is a global leader in RF power solutions for wireless infrastructure, with deep expertise in LDMOS technology and base station amplifier design.
The MRF6P27160HR6 belongs to Freescale's MRF6P family of high-power RF transistors engineered specifically for 2.5–2.7 GHz cellular infrastructure, emphasizing ruggedness, internal matching, and multicarrier linearity.
FAQ
What is the maximum DC drain voltage rating for the MRF6P27160HR6?
The MRF6P27160HR6 has a maximum drain-source voltage (VDSS) rating of +68 Vdc, with a minimum of –0.5 Vdc. This allows safe operation up to 32 VDD in practical amplifier designs while providing margin against transient voltage spikes in base station power supplies.
Does the MRF6P27160HR6 require external matching components for 50 Ω systems?
No-the MRF6P27160HR6 is internally matched for both input and output in 50 Ω systems, as confirmed in Table 4 and Figure 15 of the datasheet. External matching is only needed for non-50 Ω architectures or when optimizing for specific harmonic suppression.
What thermal resistance does the MRF6P27160HR6 exhibit under 35 W CW operation?
Under 35 W CW operation at TC = 71°C, the MRF6P27160HR6 exhibits a junction-to-case thermal resistance (RθJC) of 0.31°C/W. This value is validated in Table 2 and enables accurate heatsink sizing for continuous-duty base station deployments.
Can the MRF6P27160HR6 be used in Class C amplifier configurations?
Yes-the MRF6P27160HR6 is explicitly qualified for Class C operation in wireless local loop (WLL) applications, as stated in the product summary. Its lateral LDMOS structure maintains stability and efficiency under hard-switching conditions at 2600–2700 MHz.
What is the gate threshold voltage range for the MRF6P27160HR6 at 25°C?
The gate threshold voltage (VGS(th)) for the MRF6P27160HR6 is specified from 1.0 Vdc to 3.0 Vdc at VDS = 10 Vdc and ID = 250 μAdc, per Table 4. This tight range ensures consistent turn-on behavior across production lots in bias network designs.
MRF6P27160HR6 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- NI-1230
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 2.66GHz
- Gain:
- 14.6dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- 1.8 A
- Power - Output:
- 35W
- Voltage - Rated:
- 68 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- NI-1230
MRF6P27160HR6 FAQ
1.How can I place an order for MRF6P27160HR6 through Aetrix?
Please submit a Request for Quotation (RFQ) for MRF6P27160HR6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MRF6P27160HR6 reliable?
The price and inventory of MRF6P27160HR6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRF6P27160HR6 is usually 5 days.
3.What payment methods are accepted for MRF6P27160HR6?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRF6P27160HR6 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MRF6P27160HR6?
MRF6P27160HR6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MRF6P27160HR6 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MRF6P27160HR6?
For technical support, including MRF6P27160HR6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRF6P27160HR6 requirements.
6.How does Aetrix verify that MRF6P27160HR6 is sourced from the original manufacturer or authorized distributors?
All MRF6P27160HR6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRF6P27160HR6 meets industry standards.
7.What is the process for return or replacement of MRF6P27160HR6?
All MRF6P27160HR6 units undergo pre-shipment inspection (PSI). If there is an issue with MRF6P27160HR6, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MRF6P27160HR6 part is unused and in its original packaging.
Return procedure for MRF6P27160HR6:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MRF6P27160HR6 Tags
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SAV-551+
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TAV2-501+
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AFT05MS004NT1
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SAV-541+
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AFM907NT1
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