NXP Semiconductors MRF6S18060NR1

Overview

MRF6S18060NR1 from Freescale Semiconductor is an N-channel enhancement-mode lateral RF power MOSFET designed for GSM and GSM EDGE base station amplifiers operating at 1800–2000 MHz. It delivers 60 W CW output at 26 Vdc, achieves 15 dB power gain and 50% drain efficiency at 1990 MHz, and supports 25 W average output with 2% rms EVM in EDGE modulation-used in macrocell transceiver final-stage PA modules.

For engineers reviewing the MRF6S18060NR1 datasheet, MRF6S18060NR1 pinout, MRF6S18060NR1 application, or MRF6S18060NR1 equivalent, key selection considerations include its 225°C junction rating, internal input/output matching, 5:1 VSWR ruggedness at 60 W CW, RoHS-compliant lead-free TO-272 WB-4 plastic package, and verified performance across 1805–1880 MHz and 1930–1990 MHz bands.

Technical Context

This device employs a laterally diffused MOS (LDMOS) structure optimized for high-efficiency, high-linearity operation in cellular infrastructure. Its internally matched 50 Ω input and output enable simplified broadband design without external matching networks at 1800–2000 MHz.

It operates with fixed gate bias (V_GS(Q) = 2.8 V typ. at 600 mA quiescent current) and supports both CW and complex modulated signals-including GSM EDGE-with spectral regrowth of –62 dBc at 400 kHz offset and –76 dBc at 600 kHz offset under 25 W avg. conditions.

Key Specifications

Pinout & Package

Package: TO-272 WB-4 (Case 1484-04, Style 1), plastic overmolded, lead-free (N suffix), 225°C capable, tape-and-reel (R1 = 500 units per 44 mm, 13-inch reel).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRF6S18060NR1, MRFE6S9060NR1 offers broader ecosystem support and LTE alignment, while BLF6G22LS-60P provides superior thermal resistance and dual-band capability-but neither replicates the exact 2% EVM and –62 dBc spectral regrowth performance at 1800 MHz EDGE that defines the MRF6S18060NR1's base station qualification.

Availability

MRF6S18060NR1 is available at Aetrix Electronics and suitable for macrocell base station PA design, GSM EDGE transmitter modules, and ruggedized remote radio head deployments requiring stable component supply, long-lifecycle support, and traceable RoHS-compliant sourcing.

Supply support for MRF6S18060NR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Freescale Semiconductor (now part of NXP Semiconductors) is a global leader in RF power solutions for wireless infrastructure, automotive radar, and industrial heating applications.

The MRF6S18060NR1 belongs to Freescale's MRF6S family of LDMOS transistors engineered specifically for high-efficiency, high-linearity cellular base station amplifiers operating in the 1800–2000 MHz bands.

FAQ

What is the maximum drain-source voltage rating for the MRF6S18060NR1?

The MRF6S18060NR1 has a maximum drain-source voltage (V_DSS) rating of +68 Vdc, as specified in Table 1 of the Freescale datasheet. This allows safe operation under transient overvoltage conditions common in RF PA circuits, including load mismatch events. The device is also qualified for continuous operation up to 32 V_DD, with 26 Vdc being the standard bias condition used in all published performance data for MRF6S18060NR1.

Does the MRF6S18060NR1 require external input/output matching networks?

No-the MRF6S18060NR1 is internally matched for 50 Ω operation across 1800–2000 MHz, as confirmed in the "Features" section and functional test conditions. While external tuning elements (e.g., Z2, Z3, Z10 in Figure 16) are used in Freescale's reference test circuits for optimization, the device delivers specified gain, efficiency, and linearity without mandatory external matching. This reduces design complexity and layout sensitivity for MRF6S18060NR1 implementations.

What is the thermal resistance (junction-to-case) of the MRF6S18060NR1 at 25 W output?

The thermal resistance junction-to-case (R_θJC) for the MRF6S18060NR1 is 0.95°C/W when operating at 25 W CW output with case temperature at 77°C, per Table 2 of the datasheet. This value is measured under Freescale's standardized test fixture and assumes proper soldering of Pin 4 (thermal pad) to a minimum 1.5 cm² copper area on FR4 or equivalent PCB material. For 60 W operation, R_θJC is 0.81°C/W at 80°C case temperature.

Is the MRF6S18060NR1 suitable for EDGE modulation with 25 W average output?

Yes-the MRF6S18060NR1 is characterized and specified for GSM EDGE operation at 25 W average output, 26 Vdc, and 450 mA quiescent current across the full 1805–1880 MHz and 1930–1990 MHz bands. It achieves 2% rms EVM, –62 dBc spectral regrowth at 400 kHz offset, and –76 dBc at 600 kHz offset under these conditions, satisfying 3GPP TS 45.005 requirements for EDGE Class 12 transmitters.

What does the "R1" suffix in MRF6S18060NR1 indicate?

The "R1" suffix in MRF6S18060NR1 denotes tape-and-reel packaging: 500 units per 44 mm wide, 13-inch diameter reel, as stated in the "Features" section and Revision History. This packaging format is optimized for automated SMT placement and ensures controlled moisture exposure (MSL Level 3, peak reflow temperature 260°C), making MRF6S18060NR1 compatible with standard high-volume RF assembly lines.