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NXP Semiconductors MRF6S18100NBR1
- Part No.:
- MRF6S18100NBR1
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- TO-272BB
- Datasheet:
-
MRF6S18100NBR1.pdf
- Description:
- RF MOSFET LDMOS 28V TO272-4
- Quantity:
- Payment:
- Shipping:
Inventory:7,985
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Product details
Overview
MRF6S18100NBR1 from Freescale Semiconductor is an N-channel enhancement-mode lateral RF power MOSFET designed for GSM and GSM EDGE base station amplifiers operating at 1805–1990 MHz. It delivers 100 W CW output at 28 V, achieves 14.5 dB power gain and 49% drain efficiency in GSM mode, and supports 40 W average output with 2% rms EVM in EDGE modulation.
For engineers reviewing the MRF6S18100NBR1 datasheet, MRF6S18100NBR1 pinout, MRF6S18100NBR1 application, or MRF6S18100NBR1 equivalent, this device requires attention to thermal management (RθJC = 0.51°C/W), gate bias stability (VGS(Q) = 1.5–3.5 V), and load VSWR tolerance (5:1 @ 100 W, 1990 MHz).
Technical Context
This LDMOS transistor uses a laterally diffused structure optimized for high-efficiency, high-linearity operation in narrowband and wide instantaneous bandwidth multicarrier base station applications. Its internally matched input and output enable simplified impedance transformation in 50 Ω systems across both 1805–1880 MHz and 1930–1990 MHz bands.
The device features integrated ESD protection (HBM Class 1B), operates up to 225°C junction temperature, and is qualified for 32 VDD transient conditions. Series-equivalent large-signal impedance data (e.g., Zsource = 2.63 – j4.03 Ω at 1960 MHz) are provided for precise matching network design.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 1805–1990 MHz - Covers full GSM 1800 and EDGE bands in two defined sub-bands. |
| Output Power (GSM) | 100 W CW - Sustained continuous-wave output at 28 V, enabling high-power final-stage amplification. |
| Power Gain | 14.5 dB (GSM), 15 dB (EDGE) - Enables compact driver-final cascade architecture with minimal interstage loss. |
| Drain Efficiency | 49% (GSM), 35% (EDGE) - Directly reduces heatsink size and DC power supply requirements in macrocell BTS designs. |
| Junction Temp. Max | 225°C - Allows operation under high ambient/thermal stress; MTTF modeling supported via Freescale calculator. |
| VSWR Tolerance | 5:1 @ 100 W, 1990 MHz - Supports robust operation into mismatched antenna loads without damage or performance collapse. |
| EVM (EDGE) | 2% rms - Meets GSM EDGE spectral mask requirements for 8-PSK modulation without external linearization. |
| Thermal Resistance | RθJC = 0.51°C/W (100 W) - Defines minimum heatsink thermal conductance needed to maintain TC ≤ 150°C. |
Pinout & Package
Package: TO-270 WB-4 (Case 1486-03, Style 1), 4-pin over-molded plastic package rated for 225°C junction operation and RoHS compliant. Mounting requires bolt-down or reflow per AN1907/AN3263.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | Signal input terminal; requires stable DC bias (VGS(Q) = 1.5–3.5 V) and RF decoupling per test fixture layout. |
| Pin 2 | Drain | High-power RF output node; connects to output matching network and heatsink; carries full RF current and DC supply. |
| Pin 3 | Source | RF and DC return path; electrically tied to package baseplate; must be low-inductance grounded for stability. |
| Pin 4 | Source | Secondary source connection; used for Kelvin sensing or redundant grounding to minimize source inductance. |
Key Features
| Feature | Design Value |
|---|---|
| Internally matched I/O | Reduces external matching complexity; enables functional evaluation with minimal discrete components per Figures 1 & 16. |
| ESD protection | HBM Class 1B, MM Class A, CDM Class IV - Allows safe handling and assembly without special ESD controls beyond standard practices. |
| Wide instantaneous bandwidth | Supports multicarrier amplification across full 1805–1990 MHz band without retuning; validated in both sub-bands. |
| Low memory effects | Enables digital predistortion (DPD) convergence with reduced model order; confirmed by stable EVM vs. frequency (Fig. 8, 20). |
| 225°C capable package | Enables higher power density and extended lifetime in thermally constrained macrocell enclosures per MTTF curves (Fig. 13). |
Applications
| GSM Base Station Final Amplifier | GSM EDGE Multicarrier Amplifier |
|---|---|
|
Use Scenario: High-power final stage in 1800 MHz macrocell base transceiver station (BTS) operating in single-carrier GSM mode. IC Role / Device Role / Timing Role: RF power amplifier delivering 100 W CW output into 50 Ω load with 14.5 dB gain and 49% efficiency at 1990 MHz. Use Value: Eliminates need for external output combiners or additional PA stages; simplifies thermal design due to high efficiency and low RθJC. |
Use Scenario: Linearized multicarrier amplifier in BTS supporting 4–8 EDGE carriers across 1805–1880 MHz or 1930–1990 MHz bands. IC Role / Device Role / Timing Role: Main RF power stage delivering 40 W average output with 2% rms EVM and –63 dBc spectral regrowth at 400 kHz offset. Use Value: Meets 3GPP TS 45.005 spectral mask without analog feedback or complex DPD; reduces system-level calibration overhead. |
| TDMA/CDMA Infrastructure Amplifier | Field-Deployable Remote Radio Head (RRH) |
|
Use Scenario: Medium-power amplifier in legacy TDMA or CDMA2000 base station equipment requiring broadband linearity and ruggedness. IC Role / Device Role / Timing Role: Final-stage LDMOS transistor operating at 28 V with 5:1 VSWR tolerance and 35% drain efficiency in EDGE-like modulated signals. Use Value: Provides backward compatibility with existing RF front-end architectures while meeting modern reliability and thermal targets. |
Use Scenario: Compact, air-cooled RF power module in outdoor RRH units where size, weight, and thermal margin are critical. IC Role / Device Role / Timing Role: High-efficiency, high-VSWR-tolerant RF power die mounted in TO-270 WB-4 package with bolt-down thermal interface. Use Value: Enables 100 W-class output in <150 cm³ enclosure volume; RoHS compliance and tape-and-reel (R1 = 500 units) support automated manufacturing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NXP MRFE6S9060NR1 | 60 W Pout, 1805–1990 MHz, 32 VDD max, RθJC = 0.65°C/W | Limited to mid-power tier; lower thermal conductivity requires larger heatsink for same output. | Select when lower DC power consumption and reduced thermal mass are prioritized over peak output. |
| Infineon PTVA18100W | 100 W Pout, 1805–1990 MHz, 28 VDD, RθJC = 0.55°C/W, no internal matching | Requires full external matching network; higher design effort but greater flexibility in harmonic tuning. | Select when custom impedance optimization or harmonic suppression is required beyond reference designs. |
Compared with MRF6S18100NBR1, MRFE6S9060NR1 trades output power for improved voltage headroom and ease of biasing, while PTVA18100W offers identical power but demands full external matching-making MRF6S18100NBR1 optimal for rapid deployment of production-ready GSM/EDGE final stages.
Availability
MRF6S18100NBR1 is available at Aetrix Electronics and suitable for GSM base station final amplifiers, EDGE multicarrier transmitters, and TDMA/CDMA infrastructure requiring stable component supply through end-of-life transition planning.
Supply support for MRF6S18100NBR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Freescale Semiconductor (now part of NXP Semiconductors) is a global leader in RF power solutions for wireless infrastructure, with deep expertise in LDMOS technology and base station amplifier design.
The MRF6S18100NBR1 belongs to Freescale's MRF6S family of high-efficiency, high-linearity RF power transistors engineered specifically for 1800–2000 MHz GSM/GSM EDGE macrocell and microcell base stations.
FAQ
What is the maximum continuous drain voltage rating for the MRF6S18100NBR1?
The MRF6S18100NBR1 has a maximum drain-source voltage rating of +68 VDC. This allows safe operation under transient voltage spikes up to 32 VDD as qualified per datasheet, making it suitable for base station power supply rails with switching noise or load-dump events. The MRF6S18100NBR1 must never be operated above this limit to prevent catastrophic failure.
Does the MRF6S18100NBR1 require external matching networks for 50 Ω systems?
No-the MRF6S18100NBR1 is internally matched on both input and output, enabling direct integration into 50 Ω RF systems using the reference test circuits in Figures 1 and 16. While external tuning elements (e.g., Z2–Z4 microstrips) are used for optimization, the MRF6S18100NBR1 does not require full discrete matching networks for basic functionality.
What thermal interface method is recommended for the MRF6S18100NBR1?
Freescale recommends either solder reflow (per AN1907) or bolt-down mounting (per AN3263) for the MRF6S18100NBR1's TO-270 WB-4 package. Thermal paste or phase-change material must be applied between the package baseplate and heatsink, with torque controlled to 10–12 in·lb for bolt-down to ensure uniform pressure and minimal RθJC degradation.
Is the MRF6S18100NBR1 suitable for LTE or 5G NR applications?
The MRF6S18100NBR1 is characterized and optimized for GSM and GSM EDGE signals (single-carrier and multicarrier 8-PSK), not OFDMA-based LTE or 5G NR waveforms. While it may function in adjacent bands, its linearity, ACLR, and EVM performance are not specified for those standards-and Freescale does not guarantee compliance with 3GPP LTE/5G NR requirements for the MRF6S18100NBR1.
What is the moisture sensitivity level (MSL) rating for the MRF6S18100NBR1?
The MRF6S18100NBR1 is rated MSL Level 3 per J-STD-020, with a peak reflow temperature of 260°C. This means the device must be stored in dry pack with desiccant and used within 168 hours after opening the moisture barrier bag unless baked per JEDEC standards-critical for reliable assembly of the MRF6S18100NBR1 in high-volume manufacturing.
MRF6S18100NBR1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- TO-272BB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 1.99GHz
- Gain:
- 14.5dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- 900 mA
- Power - Output:
- 100W
- Voltage - Rated:
- 68 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- TO-272 WB-4
MRF6S18100NBR1 FAQ
1.How can I place an order for MRF6S18100NBR1 through Aetrix?
Please submit a Request for Quotation (RFQ) for MRF6S18100NBR1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MRF6S18100NBR1 reliable?
The price and inventory of MRF6S18100NBR1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRF6S18100NBR1 is usually 5 days.
3.What payment methods are accepted for MRF6S18100NBR1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRF6S18100NBR1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MRF6S18100NBR1?
MRF6S18100NBR1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MRF6S18100NBR1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MRF6S18100NBR1?
For technical support, including MRF6S18100NBR1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRF6S18100NBR1 requirements.
6.How does Aetrix verify that MRF6S18100NBR1 is sourced from the original manufacturer or authorized distributors?
All MRF6S18100NBR1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRF6S18100NBR1 meets industry standards.
7.What is the process for return or replacement of MRF6S18100NBR1?
All MRF6S18100NBR1 units undergo pre-shipment inspection (PSI). If there is an issue with MRF6S18100NBR1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MRF6S18100NBR1 part is unused and in its original packaging.
Return procedure for MRF6S18100NBR1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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