NXP Semiconductors MRF6S18100NR1

Overview

MRF6S18100NR1 from Freescale Semiconductor is an N-channel enhancement-mode lateral RF power MOSFET designed for GSM and GSM EDGE base station amplifiers operating in the 1805–1880 MHz and 1930–1990 MHz bands. It delivers 100 W CW output at 28 V, achieves 14.5 dB power gain and 49% drain efficiency under GSM conditions, and supports 40 W average output with 2% rms EVM in EDGE modulation.

For engineers reviewing the MRF6S18100NR1 datasheet, MRF6S18100NR1 pinout, MRF6S18100NR1 application, or MRF6S18100NR1 equivalent, this device requires attention to its TO-272 WB-4 package thermal interface, gate bias stability at 2.8 V_Q, series-equivalent impedance matching (e.g., Z_source = 2.63 − j4.03 Ω @ 1960 MHz), and 5:1 VSWR ruggedness at full power.

Technical Context

This LDMOS transistor employs a laterally diffused structure optimized for high-efficiency, wide instantaneous bandwidth operation in multicarrier and modulated signal environments. Its internally matched input and output enable simplified PCB layout while maintaining low memory effects-critical for linear EDGE amplification where spectral regrowth must be held to –63 dBc at 400 kHz offset.

The device operates at 28 V DC supply with quiescent drain current of 900 mA (GSM) or 700 mA (EDGE), supports up to 32 V_DD transient tolerance, and integrates ESD protection rated Class 1B (HBM), Class A (MM), and Class IV (CDM). Junction temperature is rated to 225°C with R_θJC = 0.51°C/W at 100 W CW.

Key Specifications

Pinout & Package

Package: TO-272 WB-4 (Case 1484-04, Style 1), surface-mount plastic package with exposed metal thermal pad; RoHS compliant; tape-and-reel packaging (R1 suffix = 500 units per 44 mm, 13-inch reel).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power MOSFET applications.

Compared with MRF6S18100NR1, the MRFE6S9060N offers broader frequency coverage but lacks the 100 W CW capability needed for legacy GSM macrocells, while the BLF888B delivers higher power and thermal margin but demands PCB and thermal redesign-not a direct replacement.

Availability

MRF6S18100NR1 is available at Aetrix Electronics and suitable for GSM base station transmitters, EDGE multicarrier amplifiers, and TDMA repeater systems requiring stable component supply through end-of-life transition support.

Supply support for MRF6S18100NR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Freescale Semiconductor (now part of NXP Semiconductors) was a leading designer of RF power solutions for wireless infrastructure, emphasizing ruggedness, efficiency, and manufacturability in base station components.

The MRF6S18100NR1 belongs to Freescale's MRF6S family of LDMOS transistors engineered specifically for high-power, high-efficiency GSM/GSM EDGE macrocell and microcell base station amplifiers.

FAQ

What is the maximum continuous drain voltage rating for the MRF6S18100NR1?

The MRF6S18100NR1 has a maximum drain-source voltage (V_DSS) rating of +68 Vdc, with a minimum of –0.5 Vdc. This 68 V rating supports transient overvoltage conditions up to 32 V_DD operation, enabling robustness against supply rail spikes in base station power amplifier stages. The MRF6S18100NR1 is qualified for continuous operation at 28 Vdc under specified thermal conditions.

Does the MRF6S18100NR1 require external input/output matching networks?

No-the MRF6S18100NR1 is internally matched for both input and output in a 50 Ω system, as confirmed by Freescale's test circuit data and series-equivalent impedance tables. While external tuning elements (e.g., microstrip stubs Z10–Z12 in Figure 16) are used for optimization across band edges, the MRF6S18100NR1 does not require discrete matching components for basic functional operation at 1805–1880 MHz or 1930–1990 MHz.

What is the thermal resistance from junction to case for the MRF6S18100NR1 at 100 W CW?

The thermal resistance from junction to case (R_θJC) for the MRF6S18100NR1 is 0.51°C/W when operated at 100 W CW with case temperature maintained at 80°C. This value assumes proper soldering of the exposed thermal pad (Pin 4) to a sufficiently sized copper pour, as defined in Freescale's AN1955 and AN3263 application notes. At 40 W average (EDGE), R_θJC rises to 0.62°C/W due to lower average power dissipation.

How does the MRF6S18100NR1 perform under GSM EDGE modulation with respect to linearity?

Under GSM EDGE modulation at 28 Vdc, 700 mA I_DQ, and 40 W average output, the MRF6S18100NR1 achieves 2% rms EVM and spectral regrowth of –63 dBc at 400 kHz offset and –76 dBc at 600 kHz offset. These values meet 3GPP TS 45.005 requirements for EDGE base station transmitters and reflect the device's low memory effect design, validated across the full 1805–1880 MHz and 1930–1990 MHz bands.

Is the MRF6S18100NR1 still in active production?

No-the MRF6S18100NR1 is a lifetime buy product with last order date of 1 July 2011 and last shipment date of 30 June 2012, as documented in Freescale's revision history (Rev. 2, Dec. 2008). Aetrix Electronics provides verified, traceable inventory with full documentation and supports obsolescence mitigation planning for ongoing production programs requiring this part.