NXP Semiconductors MRF6S19100NR1

Overview

MRF6S19100NR1 from Freescale Semiconductor is a lateral N-channel enhancement-mode RF power MOSFET designed for Class AB operation in 1930–1990 MHz base station amplifiers. It delivers 22 W average output power at 28 Vdc, achieves 14.5 dB power gain and 25.5% drain efficiency under 2-carrier N-CDMA conditions, and supports 5:1 VSWR tolerance at 100 W CW - deployed in PCS/cellular radio and wireless local loop (WLL) infrastructure.

For engineers reviewing the MRF6S19100NR1 datasheet, MRF6S19100NR1 pinout, MRF6S19100NR1 application, or MRF6S19100NR1 equivalent, key selection criteria include its 225°C junction rating, internally matched 50 Ω input/output impedance, RoHS-compliant TO-272 WB-4 plastic package, and verified 2-carrier N-CDMA linearity performance (IM3 = –37 dBc, ACPR = –51 dBc).

Technical Context

This device operates as a broadband RF power amplifier stage with series-equivalent large-signal impedance characterization (Z_source = 1.63 – j2.55 Ω, Z_load = 2.31 – j4.54 Ω at 1960 MHz). Its gate threshold voltage (1–3 Vdc) and quiescent gate voltage (2–4 Vdc at I_DQ = 950 mA) support stable Class AB biasing across temperature.

Thermal design relies on R_θJC = 0.65 °C/W at 23 W CW, with case temperature limited to 150°C and junction rated to 225°C. ESD protection meets JESD22-A114 Class 1B (HBM), JESD22-A115 Class A (MM), and JESD22-C101 Class IV (CDM).

Key Specifications

Pinout & Package

TO-272 WB-4 plastic package (Case 1484-04, Style 1) with 4-terminal configuration: Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source, Pin 4 = Source (tied internally to Pin 3). The metal tab is electrically connected to the source and serves as primary thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRF6S19100NR1, MRF6P19100HR5 offers superior efficiency and bandwidth at higher voltage and cost, while PD57018-E provides pin-compatible LDMOS continuity with minor trade-offs in ACPR and MTTF at elevated junction temperatures.

Availability

MRF6S19100NR1 is available at Aetrix Electronics and suitable for cellular infrastructure, wireless local loop (WLL), and PCS band repeater applications requiring stable component supply amid end-of-life transitions.

Supply support for MRF6S19100NR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Freescale Semiconductor was a global semiconductor company specializing in RF power, automotive, and industrial microcontrollers before its acquisition by NXP in 2015. Its RF division delivered high-reliability LDMOS transistors for wireless infrastructure.

The MRF6S19100NR1 belongs to Freescale's MRF6S family of laterally diffused MOSFETs engineered specifically for N-CDMA and multicarrier base station PAs operating between 1800–2200 MHz.

FAQ

What is the maximum continuous drain voltage rating for the MRF6S19100NR1?

The MRF6S19100NR1 has a maximum drain-source voltage (V_DSS) rating of +68 Vdc, with a minimum of –0.5 Vdc. This allows safe operation under transient overvoltage conditions common in RF PA bias networks, provided gate-source voltage remains within –0.5 Vdc to +12 Vdc limits. The device is qualified for up to 32 V_DD continuous operation per datasheet specifications.

Does the MRF6S19100NR1 require external matching networks in standard 50 Ω systems?

The MRF6S19100NR1 is internally matched for 50 Ω input and output impedance across 1930–1990 MHz, eliminating the need for external lumped-element matching in narrowband applications. However, the Freescale test circuit uses microstrip-based matching (Z1–Z12) to optimize N-CDMA linearity - so external tuning remains recommended for full-spec performance in production designs.

What thermal resistance value applies to the MRF6S19100NR1 at 23 W CW output?

At 23 W CW output with case temperature maintained at 75°C, the MRF6S19100NR1 exhibits a thermal resistance of R_θJC = 0.65 °C/W from junction to case. This value is measured under controlled lab conditions using the specified test fixture and must be derated in real-world PCB layouts with non-ideal heatsinking or airflow.

Is the MRF6S19100NR1 suitable for pulsed RF applications?

Yes - the MRF6S19100NR1 supports pulsed CW operation with 8 μsec pulse width and 1 msec period (0.8% duty cycle), achieving up to 164 W PEP. Its 225°C junction rating and low R_θJC enable reliable pulsed operation in radar and burst-mode communication systems, provided gate drive timing avoids shoot-through and thermal cycling stays within MTTF limits.

What does the "R1" suffix indicate in MRF6S19100NR1?

The "R1" suffix in MRF6S19100NR1 denotes tape-and-reel packaging: 500 units per reel, 44 mm tape width, 13-inch reel diameter. This format is optimized for automated SMT placement. The "N" suffix confirms lead-free terminations per RoHS, and "NR1" collectively identifies the environmentally compliant, machine-ready variant of the MRF6S19100N base part.