NXP Semiconductors MRF6S19140HSR3

Overview

MRF6S19140HSR3 from NXP Semiconductors (formerly Freescale) is an N-channel enhancement-mode lateral RF power MOSFET optimized for Class AB operation in PCN/PCS base station amplifiers at 1930–1990 MHz. It delivers 29 W average output power with 16 dB power gain and 27.5% drain efficiency under 2-carrier N-CDMA conditions (V_DD = 28 V, I_DQ = 1150 mA), and supports Doherty amplifier architectures in wireless infrastructure.

For engineers reviewing the MRF6S19140HSR3 datasheet, MRF6S19140HSR3 pinout, MRF6S19140HSR3 application, or MRF6S19140HSR3 equivalent, key selection criteria include broadband 2-carrier N-CDMA linearity (IM3 = –37 dBc, ACPR = –51 dBc), 10:1 VSWR ruggedness at 140 W CW, RoHS-compliant NI-880 package, and integrated ESD protection rated to Class 2 HBM.

Technical Context

This LDMOS transistor employs a laterally diffused MOS structure with internal input/output matching networks, enabling direct 50 Ω system integration without external tuning components. Its series-equivalent large-signal impedance is characterized across 1900–2020 MHz (e.g., Z_source = 1.07 – j0.46 Ω at 1930 MHz; Z_load = 2.00 – j4.24 Ω), supporting stable broadband operation in multicarrier TDMA/CDMA/WLL transmitters.

The device operates with gate threshold voltage of 1–3 V and quiescent gate voltage of 2–4 V at 28 V drain bias, enabling precise Class AB bias control. Thermal resistance is 0.38 °C/W (junction-to-case, 29 W CW), and maximum junction temperature is rated at 225 °C - validated for continuous high-PAR signal handling in base station final stages.

Key Specifications

Pinout & Package

Package: NI-880 (Case 465B-03, Style 1), hermetically sealed ceramic/metal flange-mount package with integral heat sink interface. Dimensions: 22.99–23.24 mm (A) × 13.60–13.80 mm (B) × 3.73–5.08 mm (C); flange bolt center 29.57 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRF6S19140HR3, the MRF6S19140HSR3 provides identical electrical performance in a mechanically distinct NI-880 package, while AFM905S trades CDMA-specific linearity for broader frequency coverage and higher output - making MRF6S19140HSR3 the preferred choice for dedicated PCS-band CDMA/WLL infrastructure where spectral purity and thermal efficiency are prioritized.

Availability

MRF6S19140HSR3 is available at Aetrix Electronics and suitable for macro base station transmitters, CDMA2000 multicarrier amplifiers, and wireless local loop (WLL) hubs requiring stable component supply with long lifecycle visibility and traceable sourcing.

Supply support for MRF6S19140HSR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors acquired Freescale Semiconductor in 2015 and continues to support its RF Power portfolio, specializing in high-reliability semiconductor solutions for automotive, industrial, and communications markets.

The MRF6S19140HSR3 belongs to the MRF6S family of LDMOS RF power transistors, engineered specifically for high-efficiency, high-linearity cellular infrastructure applications including CDMA, TDMA, and WLL systems operating in the 1.8–2.2 GHz band.

FAQ

What is the maximum continuous drain voltage rating for MRF6S19140HSR3?

The MRF6S19140HSR3 has a maximum drain-source voltage (V_DSS) rating of +68 Vdc, allowing safe operation under transient overvoltage conditions commonly encountered in 28 V RF power supply rails with switching noise or load-pull events. This rating is specified in Table 1 of the official datasheet (Rev. 5, May 2007) and validated up to 225 °C junction temperature.

Does MRF6S19140HSR3 require external matching networks for 1930–1990 MHz operation?

No, the MRF6S19140HSR3 is internally matched for 50 Ω operation across 1930–1990 MHz, as confirmed in Table 4 footnote and Figure 15 impedance data. Its series-equivalent source and load impedances (e.g., Z_source = 1.07 – j0.46 Ω at 1930 MHz) are designed to interface directly with standard microstrip layouts - eliminating discrete matching components in most base station PA designs.

What is the thermal resistance (R_θJC) of MRF6S19140HSR3 at 29 W average output power?

The junction-to-case thermal resistance (R_θJC) of MRF6S19140HSR3 is 0.38 °C/W when operating at 29 W average output power with case temperature maintained at 77 °C, as specified in Table 2 of the datasheet. This value enables accurate thermal modeling for heatsink sizing in macro base station RF modules.

How does MRF6S19140HSR3 perform under 2-carrier N-CDMA modulation?

Under 2-carrier N-CDMA conditions (V_DD = 28 V, I_DQ = 1150 mA, PAR = 9.8 dB @ 0.01% CCDF), the MRF6S19140HSR3 delivers 29 W average output power with 16 dB power gain, 27.5% drain efficiency, –37 dBc IM3 (±2.5 MHz offset), and –51 dBc ACPR (±885 kHz offset), as documented in the "Typical 2-Carrier N-CDMA Performance" section.

Is MRF6S19140HSR3 RoHS compliant and lead-free?

Yes, the MRF6S19140HSR3 is RoHS compliant and manufactured with lead-free finish and halogen-free materials, as explicitly stated in the Features section of the datasheet (Rev. 5, May 2007). It meets EU Directive 2011/65/EU and is suitable for environmentally regulated telecom equipment deployments worldwide.