NXP Semiconductors MRF6S19200HR5

Overview

MRF6S19200HR5 from NXP Semiconductors (formerly Freescale) is an N-channel enhancement-mode lateral RF power MOSFET designed for CDMA and W-CDMA base station amplifier stages operating at 1930–1990 MHz. It delivers 56 W average output power at 28 V, achieves 17.9 dB power gain and 29.5% drain efficiency under single-carrier W-CDMA conditions (3GPP TM1, 64 DPCH), and supports Class AB/C operation in multicarrier and Doherty configurations.

For engineers reviewing the MRF6S19200HR5 datasheet, MRF6S19200HR5 pinout, MRF6S19200HR5 application, or MRF6S19200HR5 equivalent, key selection criteria include broadband W-CDMA linearity (ACPR = –36 dBc @ ±5 MHz), 10:1 VSWR ruggedness at 130 W CW, integrated ESD protection (HBM Class 1B), gate voltage range (–6.0 to +10 V), and NI-780S package thermal resistance (0.35 °C/W).

Technical Context

This device employs a laterally diffused MOS (LDMOS) structure optimized for high-efficiency RF power amplification in cellular infrastructure. Its internally matched input/output impedances (e.g., Z_source = 1.82 – j3.63 Ω, Z_load = 1.78 – j0.20 Ω at 1960 MHz) reduce external matching complexity while maintaining broadband performance across the 60 MHz band (gain flatness = 0.6 dB).

The MRF6S19200HR5 integrates ESD protection per JESD22-A114 (Class 1B), supports wide negative gate-source voltage swing for improved Class C operation, and is characterized with series-equivalent large-signal impedance parameters-enabling accurate load-pull simulation and Doherty combiner design without de-embedding.

Key Specifications

Pinout & Package

Package: NI-780S (Case 465A-06, Style 1), flanged ceramic/metal hermetic package with solderable baseplate for low-thermal-resistance mounting. Dimensions: 34.16 × 9.91 × 4.32 mm (L × W × H), 3-terminal configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRF6S19200HR5, MRF6S19200HSR3 offers identical RF performance in a thermally less optimal package, while AFM906S provides superior efficiency and gain at the cost of GaN-specific design constraints-making MRF6S19200HR5 the optimal balance of ruggedness, proven LDMOS reliability, and ease of integration in legacy 3G infrastructure.

Availability

MRF6S19200HR5 is available at Aetrix Electronics and suitable for CDMA base station transmitters, W-CDMA macrocell PAs, multicarrier amplifiers, PCS band repeaters, and Doherty PA modules requiring stable component supply across extended production lifecycles.

Supply support for MRF6S19200HR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with deep heritage in RF power technology inherited from Freescale.

The MRF6S19200HR5 belongs to NXP's high-reliability LDMOS RF power transistor family, engineered specifically for 3G/4G cellular infrastructure applications demanding ruggedness, linearity, and long-term thermal stability.

FAQ

What is the maximum continuous drain current rating for MRF6S19200HR5?

The MRF6S19200HR5 does not specify a standalone maximum continuous drain current (I_D) rating. Instead, its safe operating area is defined by maximum drain-source voltage (V_DSS = +66 V), gate-source voltage (V_GS = –6.0 to +10 V), and thermal limits. Under typical 28 V, 1600 mA quiescent bias, it delivers 56 W average RF output. Absolute maximum junction temperature is 225 °C, with thermal resistance R_θJC = 0.35 °C/W enabling 130 W CW operation at case temperature ≤110 °C.

Does MRF6S19200HR5 require external input/output matching networks?

Yes, MRF6S19200HR5 is internally matched for ease of use but still requires external broadband matching networks to achieve optimal 50 Ω system interface. The datasheet provides series-equivalent source and load impedances (e.g., Z_source = 1.82 – j3.63 Ω at 1960 MHz) for precise microstrip or lumped-element matching design. Freescale's reference test circuit (Figure 1) uses six microstrip sections and discrete capacitors/resistors to realize full-band performance.

What is the gate threshold voltage range for MRF6S19200HR5?

The gate threshold voltage (V_GS(th)) for MRF6S19200HR5 is specified as 1–3 V (min–max) at V_DS = 10 V and I_D = 372 μA. Its quiescent gate voltage (V_GS(Q)) under functional test conditions (V_DD = 28 V, I_DQ = 1600 mA) is 2–4 V. This wide usable gate voltage window supports stable Class AB biasing and enables deeper Class C operation via extended negative swing down to –6.0 V.

How does MRF6S19200HR5 perform in Doherty amplifier configurations?

MRF6S19200HR5 is explicitly optimized for Doherty applications, featuring greater negative gate-source voltage range (–6.0 V) for peaking amplifier control and characterized intermodulation symmetry (IMDsym = 20 MHz). Its broadband gain flatness (0.6 dB over 60 MHz) and consistent phase response (1.94° avg. deviation) ensure tight carrier-peaking alignment, while 10:1 VSWR tolerance protects both amplifier branches during load modulation.

Is MRF6S19200HR5 RoHS compliant and lead-free?

Yes, MRF6S19200HR5 is RoHS compliant and lead-free. The datasheet explicitly states "RoHS Compliant" under Features, and the NI-780S package construction (ceramic/metal hermetic) meets EU Directive 2011/65/EU requirements. It is supplied in tape-and-reel format (R5 suffix = 250 units per 56 mm, 13-inch reel), with no lead-based solder or finishes used in manufacturing.