NXP Semiconductors MRF6S19200HSR3

Overview

MRF6S19200HSR3 from NXP Semiconductors (formerly Freescale) is an N-channel enhancement-mode lateral RF power MOSFET optimized for CDMA and W-CDMA base station amplifiers operating at 1930–1990 MHz. It delivers 56 W average output power at 28 V, achieves 17.9 dB power gain and 29.5% drain efficiency under single-carrier W-CDMA conditions (3GPP TM1, 64 DPCH), and supports Class AB/C operation in multicarrier and Doherty amplifier architectures.

For engineers reviewing the MRF6S19200HSR3 datasheet, MRF6S19200HSR3 pinout, MRF6S19200HSR3 application, or MRF6S19200HSR3 equivalent, key selection criteria include guaranteed 10:1 VSWR ruggedness at 130 W CW, integrated ESD protection (HBM Class 1B), internally matched 50 Ω input/output, and validated W-CDMA linearity metrics including ACPR = –36 dBc @ ±5 MHz offset.

Technical Context

This device employs a laterally diffused MOS (LDMOS) structure with series-equivalent large-signal impedance characterization across 1880–2040 MHz. Its gate threshold voltage (1–3 V) and quiescent gate voltage (2–4 V) support stable Class AB biasing, while the –6.0 to +10 V gate-source rating enables extended negative V_GS swing for improved Class C efficiency.

Thermal design is anchored by a 0.35 °C/W junction-to-case thermal resistance at 89 W CW (T_C = 110 °C), enabling high-reliability operation up to T_J = 225 °C. The NI-780 package integrates a copper-tungsten flange and ceramic insulator for low-inductance source grounding and repeatable RF performance in macro-cell PA modules.

Key Specifications

Pinout & Package

Package: NI-780 (Case 465-06, Style 1), hermetically sealed metal-ceramic package with copper-tungsten flange for low thermal resistance (0.35 °C/W) and high-power RF grounding. Flange is electrically connected to source terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power MOSFET applications.

Compared with PD57018-E and MRF6P20190HR5, the MRF6S19200HSR3 offers optimal balance of proven W-CDMA linearity, 10:1 VSWR ruggedness, and NI-780 footprint compatibility for cost-sensitive 3G infrastructure upgrades-without GaN's gate drive complexity or larger LDMOS thermal interface demands.

Availability

MRF6S19200HSR3 is available at Aetrix Electronics and suitable for CDMA base station transmitters, W-CDMA macrocell amplifiers, Doherty PA modules, and multi-carrier cellular infrastructure requiring stable component supply and long-term lifecycle assurance.

Supply support for MRF6S19200HSR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with deep heritage in RF power technology from its Freescale acquisition.

The MRF6S19200HSR3 belongs to NXP's RF Power LDMOS portfolio, engineered specifically for high-efficiency, high-reliability cellular infrastructure amplifiers operating in the 1.9–2.2 GHz bands.

FAQ

What is the maximum continuous drain current rating for the MRF6S19200HSR3?

The MRF6S19200HSR3 does not specify a maximum continuous drain current (I_D) independent of thermal conditions. Instead, its safe operating area is defined by maximum ratings: 130 W CW output at T_C = 25 °C, derating linearly at 0.49 W/°C above 25 °C. At full 130 W CW, typical I_D exceeds 4.6 A, but actual current depends on V_DD, duty cycle, and heatsink performance. Always refer to the SOA curve in the MRF6S19200H datasheet Rev. 0.

Does the MRF6S19200HSR3 require external input/output matching networks?

No-the MRF6S19200HSR3 is internally matched for 50 Ω operation across 1930–1990 MHz, as confirmed in Table 4 footnote and Figure 15 impedance data. Freescale's test circuit (Figures 1–2) uses only DC blocking/feed components (C1–C15, R1–R2, B1); no RF matching stubs or transformers are needed. However, system-level output filtering remains necessary for harmonic suppression.

What is the gate threshold voltage range for the MRF6S19200HSR3, and how does it affect bias design?

The MRF6S19200HSR3 has a gate threshold voltage (V_GS(th)) of 1–3 V (min–max) at V_DS = 10 V and I_D = 372 μA. This range ensures consistent turn-on behavior across temperature and process variation. For Class AB operation at I_DQ = 1600 mA, the quiescent gate voltage (V_GS(Q)) is specified as 2–4 V, guiding stable bias network design using resistive dividers or active current sources to maintain linearity and efficiency.

Can the MRF6S19200HSR3 be used in Class C mode, and what design considerations apply?

Yes-the MRF6S19200HSR3 supports Class C operation due to its extended –6.0 V gate-source voltage rating and optimized negative V_GS swing capability. To implement Class C, bias the gate below V_GS(th) (e.g., –1 to –2 V) while maintaining V_DS ≤ 32 V. Ensure gate drive circuitry can sink sufficient current during conduction pulses and verify IMD performance meets application requirements, as Class C increases harmonic content and may degrade ACPR without proper output filtering.

How is thermal management implemented for the MRF6S19200HSR3 in high-power operation?

Thermal management for the MRF6S19200HSR3 relies on direct mounting of its copper-tungsten flange (NI-780 package) to a heatsink with thermal interface material. With R_θJC = 0.35 °C/W at 89 W CW, a 10 °C max case-to-ambient rise requires ≥28.6 W/°C heatsink thermal resistance. Mounting torque must be 20–25 in·lb per screw (4x), and flange surface flatness ≤0.002″ is critical. Refer to AN1955 for measurement methodology and MTTF calculator access at nxp.com/rf.