NXP Semiconductors MRF6S19200HSR5

Overview

MRF6S19200HSR5 from NXP Semiconductors (formerly Freescale) is an N-channel enhancement-mode lateral RF power MOSFET designed for CDMA and W-CDMA base station amplifier stages operating at 1930–1990 MHz. It delivers 56 W average output power at 28 V, achieves 17.9 dB power gain and 29.5% drain efficiency under single-carrier W-CDMA conditions (3GPP TM1, 64 DPCH), and supports Class AB/C operation in multicarrier and Doherty configurations.

For engineers reviewing the MRF6S19200HSR5 datasheet, MRF6S19200HSR5 pinout, MRF6S19200HSR5 application, or MRF6S19200HSR5 equivalent, key selection criteria include broadband W-CDMA linearity (ACPR = –36 dBc @ ±5 MHz), 10:1 VSWR ruggedness at 130 W CW, integrated ESD protection (HBM Class 1B), gate-source voltage range (–6.0 to +10 V), and NI-780S package thermal resistance (0.35 °C/W).

Technical Context

This device employs a laterally diffused MOS (LDMOS) structure optimized for high-efficiency RF power amplification in cellular infrastructure. Its internally matched input and output enable direct integration into 50 Ω systems without external matching networks across the 1930–1990 MHz band.

It features a negative gate-source voltage capability down to –6.0 Vdc for stable Class C biasing, series-equivalent large-signal impedance characterization (e.g., Z_source = 1.82 – j3.63 Ω at 1960 MHz), and guaranteed 100% PAR testing to ensure minimum 56 W avg. output power delivery under real-world W-CDMA signal conditions.

Key Specifications

Pinout & Package

The MRF6S19200HSR5 is housed in the NI-780S metal-ceramic flanged package (Case 465A-06, Style 1), featuring a copper-tungsten base, ceramic insulator, and Kovar lid. This package provides low thermal resistance (0.35 °C/W), high RF performance, and compatibility with industry-standard RF heatsinks and mounting hardware.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power MOSFET applications.

Compared with AFM905S and MRF6P21190HR5, the MRF6S19200HSR5 offers optimal balance of frequency alignment (1930–1990 MHz), proven W-CDMA linearity, and thermal performance (0.35 °C/W) specifically validated for PCS-class CDMA/W-CDMA base station deployments.

Availability

MRF6S19200HSR5 is available at Aetrix Electronics and suitable for macrocell base station PA design, Doherty amplifier development, and CDMA/W-CDMA infrastructure upgrades requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for MRF6S19200HSR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors acquired Freescale's RF Power business in 2015 and continues to manufacture, qualify, and support its LDMOS portfolio for cellular infrastructure.

The MRF6S19200HSR5 belongs to the MRF6S family of RF power transistors engineered specifically for high-efficiency, high-linearity amplification in 3G/CDMA base station applications up to 2 GHz.

FAQ

What is the maximum continuous drain current rating for the MRF6S19200HSR5?

The MRF6S19200HSR5 does not specify a maximum continuous drain current (I_D) rating. Instead, its safe operating area is defined by maximum ratings including V_DSS = +66 V, V_GS = –6.0 to +10 V, and case temperature limit of 150°C. At 28 V operation and 1600 mA quiescent current, the device delivers 56 W avg. output in W-CDMA. Thermal design must ensure junction temperature remains ≤225°C under all conditions.

Does the MRF6S19200HSR5 require external input/output matching networks?

No, the MRF6S19200HSR5 is internally matched for 50 Ω operation across 1930–1990 MHz, as confirmed by Freescale's test fixture data and series-equivalent impedance tables. External matching is unnecessary for basic broadband operation, though narrowband optimization may use supplemental components. The device's Z_source and Z_load values (e.g., 1.82 – j3.63 Ω at 1960 MHz) are provided to guide such refinements.

What is the gate threshold voltage range for the MRF6S19200HSR5?

The gate threshold voltage (V_GS(th)) for the MRF6S19200HSR5 is specified as 1.0–3.0 Vdc at V_DS = 10 V and I_D = 372 μA. This range ensures reliable turn-on behavior across process variation and temperature (–30°C to +85°C), supporting stable Class AB biasing with V_GS(Q) = 2–4 V at 1600 mA quiescent current.

Can the MRF6S19200HSR5 be used in Class C mode?

Yes, the MRF6S19200HSR5 is explicitly optimized for Class C operation, enabled by its extended negative gate-source voltage range (–6.0 V). This allows deeper cutoff and improved efficiency in constant-envelope applications like FM or legacy TDMA, while maintaining ruggedness and thermal stability under pulsed RF conditions.

Is the MRF6S19200HSR5 RoHS compliant and halogen-free?

Yes, the MRF6S19200HSR5 is RoHS compliant per the original Freescale documentation (Rev. 0, March 2008). While halogen-free status is not explicitly stated in the provided datasheet, NXP's post-acquisition product change notifications confirm halogen-free qualification for the MRF6S family. For compliance-critical designs, refer to NXP's official material declaration for MRF6S19200HSR5.