NXP Semiconductors MRF6S20010NR1

Overview

MRF6S20010NR1 from NXP Semiconductors (formerly Freescale) is a 10 W, 28 V, N-channel enhancement-mode lateral RF power MOSFET optimized for Class AB linear amplification in 1600–2200 MHz cellular infrastructure applications. It delivers 15.5 dB power gain, 36% drain efficiency at 10 W PEP, and –34 dBc IMD in two-tone testing at 2170 MHz - enabling high-efficiency, low-distortion final-stage amplification in GSM EDGE, W-CDMA, and N-CDMA base station transceivers.

For engineers reviewing the MRF6S20010NR1 datasheet, MRF6S20010NR1 pinout, MRF6S20010NR1 application, or MRF6S20010NR1 equivalent, this device is selected for its internally matched 50 Ω input/output impedance, 225°C-rated plastic TO-270-2 package, integrated ESD protection, and proven performance across 1805–1880 MHz (GSM EDGE), 2110–2170 MHz (W-CDMA), and 1930–1990 MHz (N-CDMA) bands under real-world modulation conditions.

Technical Context

This LDMOS transistor operates in common-source configuration with gate-controlled conduction and drain-connected RF output. Its internal matching network enables direct integration into 50 Ω systems without external input matching, while the source-terminal backside metallization provides low-inductance thermal and RF grounding essential for stability at 2.2 GHz.

The device supports broadband operation via series-equivalent large-signal impedance characterization (e.g., Z_source = 13.95 + j6.08 Ω at 1880 MHz; Z_load = 2.70 + j4.17 Ω at 1990 MHz), and is qualified for up to 32 V_DD operation with robust 5:1 VSWR tolerance at 28 Vdc and 2000 MHz.

Key Specifications

Pinout & Package

TO-270-2 plastic package with gull-wing leads; case (backside) is electrically connected to source terminal. Package meets JEDEC MO-218AC standard and is rated for 225°C operation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRF6S20010GNR1, the MRF6S20010NR1 offers identical RF performance in a straight-lead TO-270-2 package suited for through-hole or wave-solder assembly, whereas PD850015 provides higher output power at the cost of reduced gain, efficiency, and non-interchangeable matching - making MRF6S20010NR1 optimal for cost-sensitive, multi-band 10 W PEP infrastructure designs.

Availability

MRF6S20010NR1 is available at Aetrix Electronics and suitable for GSM EDGE base stations, W-CDMA macrocell transmitters, N-CDMA sector amplifiers, and multi-band cellular infrastructure requiring stable component supply and long-term lifecycle support.

Supply support for MRF6S20010NR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with deep heritage in RF power technology from its Freescale acquisition.

The MRF6S20010NR1 belongs to NXP's MRF6S family of high-frequency LDMOS RF power transistors, designed specifically for energy-efficient, linear, broadband amplification in 3G/4G cellular infrastructure equipment operating between 1600–2200 MHz.

FAQ

What is the maximum DC supply voltage rating for the MRF6S20010NR1?

The MRF6S20010NR1 is qualified for operation up to 32 V_DD, though its typical application uses 28 Vdc. The absolute maximum drain-source voltage (V_DSS) is +68 Vdc, but sustained operation above 32 V is not recommended per Freescale/NXP qualification. All published RF performance data for MRF6S20010NR1 - including gain, efficiency, and linearity - is specified at 28 Vdc with 130 mA quiescent current.

Does the MRF6S20010NR1 require external input matching?

No, the MRF6S20010NR1 is internally matched for 50 Ω systems across its 1600–2200 MHz operating range. Input return loss exceeds –9 dB (typical –15 dB) at 2170 MHz, eliminating the need for external input matching networks in most applications. However, output matching remains necessary and is optimized per band using the published series-equivalent Z_load values (e.g., 2.70 + j4.17 Ω at 1990 MHz) for MRF6S20010NR1.

What is the thermal resistance (R_θJC) of the MRF6S20010NR1?

The MRF6S20010NR1 has a thermal resistance of 2.3 °C/W (junction-to-case) when operated at 1 W CW with case temperature at 78°C, and 2.9 °C/W under 10 W PEP two-tone test conditions at 79°C case temperature. These values reflect improved thermal performance from revision 4 of the datasheet and assume proper soldering of the source-connected case to a thermally conductive copper plane or heatsink - critical for maintaining the 225°C maximum junction temperature rating of MRF6S20010NR1.

How does the MRF6S20010NR1 perform in GSM EDGE applications?

In GSM EDGE applications at 1805–1880 MHz, the MRF6S20010NR1 delivers 4 W average output power with 16 dB power gain, 33% drain efficiency, and 1.3% rms EVM - fully compliant with ETSI EN 300 910 spectral and modulation requirements. Its spectral regrowth is –60 dBc at 400 kHz offset and –70 dBc at 600 kHz offset, ensuring clean transmission in adjacent channels without violating mask limits - a key performance metric verified on the MRF6S20010NR1 test circuit per Table 8.

Is the MRF6S20010NR1 pin-compatible with other devices in the MRF6S family?

The MRF6S20010NR1 shares the same TO-270-2 package and pinout (gate on lead 1, drain on lead 2, source on case) with MRF6S20010GNR1, differing only in lead form (straight vs. gull-wing). It is not pin-compatible with higher-power variants like MRF6S21100NR1, which uses a larger TO-270-4 package with additional thermal leads. Any substitution within the MRF6S family requires verification of Z_source/Z_load, thermal resistance, and bias requirements - MRF6S20010NR1's specific impedance data is unique to its 10 W PEP rating.