NXP Semiconductors MRF6S21050LR3

Overview

MRF6S21050LR3 from Freescale Semiconductor is an N-channel enhancement-mode lateral RF power MOSFET designed for W-CDMA base station amplifiers operating at 2110–2170 MHz. It delivers 11.5 W average output power at 28 V, 450 mA quiescent drain current, with 16 dB power gain and 27.7% drain efficiency in 2-carrier W-CDMA operation. Its internal matching and 10:1 VSWR ruggedness support robust multicarrier cellular infrastructure deployment.

For engineers reviewing the MRF6S21050LR3 datasheet, MRF6S21050LR3 pinout, MRF6S21050LR3 application, or MRF6S21050LR3 equivalent, key selection criteria include its 2110–2170 MHz frequency band, 28 V operation, NI-400S package with drain-gate-source pinout, and verified W-CDMA linearity metrics (ACPR = –40 dBc, IM3 = –37 dBc).

Technical Context

This device employs a laterally diffused MOS (LDMOS) structure optimized for high-efficiency, high-linearity RF power amplification in Class AB configuration. Its internally matched input and output networks reduce external tuning complexity while maintaining broadband performance across the 2110–2170 MHz band.

Thermal design is enabled by a low junction-to-case thermal resistance of 1.16 °C/W at 50 W CW, with maximum junction temperature rated at 225 °C and case temperature limited to 150 °C. ESD protection meets JESD22-A114 Class 1C, JESD22-A115 Class A, and JESD22-C101 Class III standards.

Key Specifications

Pinout & Package

Package: NI-400S (Case 465F-04, Style 1), flange-mounted ceramic/metal hermetic package with solderable baseplate for thermal management. Dimensions: 10.03 × 10.03 × 4.14 mm (L × W × H), 3-terminal configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRF6S21050LR3, MRFE6S9060NR1 offers extended bandwidth and higher output but increases design effort via external matching, while QPD1006 delivers superior efficiency using GaN but mandates revised gate protection and thermal management strategies.

Availability

MRF6S21050LR3 is available at Aetrix Electronics and suitable for W-CDMA base station transmitters, TDMA/CDMA macrocell amplifiers, and fixed wireless access (WLL) transmitter modules requiring stable component supply and long-term lifecycle support.

Supply support for MRF6S21050LR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Freescale Semiconductor (now part of NXP Semiconductors) is a global leader in RF power solutions, specializing in high-reliability semiconductor devices for wireless infrastructure.

The MRF6S21050LR3 belongs to Freescale's MRF6S series of LDMOS RF power transistors, engineered specifically for high-efficiency, high-linearity cellular base station amplifiers operating in the 2–2.2 GHz band.

FAQ

What is the maximum continuous drain voltage rating for the MRF6S21050LR3?

The MRF6S21050LR3 has a maximum drain-source voltage (VDSS) rating of +68 Vdc. This allows safe operation at 28 V supply with margin for transient spikes and enables use in designs with up to 32 VDD operation as qualified in the datasheet. The –0.5 V lower limit prevents reverse conduction during switching transitions.

Does the MRF6S21050LR3 require external matching networks?

No - the MRF6S21050LR3 is internally matched on both input and output, optimized for 50 Ω systems at 2110–2170 MHz. While external tuning may further optimize performance in specific layouts, the device operates effectively without discrete matching components, as confirmed in Freescale's test circuit and functional characterization data.

What thermal resistance value applies to the MRF6S21050LR3 at 50 W CW output?

At 50 W CW output with case temperature held at 80 °C, the MRF6S21050LR3 exhibits a junction-to-case thermal resistance (RθJC) of 1.16 °C/W. This value is critical for heatsink sizing and MTTF estimation, and is validated per AN1955 thermal measurement methodology.

How does the MRF6S21050LR3 perform in 2-carrier W-CDMA with 3.84 MHz channel bandwidth?

In 2-carrier W-CDMA operation at 2157 MHz, the MRF6S21050LR3 delivers 11.5 W average output power with 16 dB power gain, 27.7% drain efficiency, –40 dBc ACPR at ±5 MHz offset, and –37 dBc IM3 at ±10 MHz offset - all measured under PAR = 8.5 dB at 0.01% CCDF probability, meeting 3GPP spectral emission limits.

Is the MRF6S21050LR3 RoHS compliant and what packaging format is used?

Yes, the MRF6S21050LR3 is RoHS compliant and supplied in tape-and-reel format with the "R3" suffix indicating 250 units per 32 mm wide, 13-inch reel. This packaging supports automated surface-mount assembly and aligns with IPC/JEDEC standards for moisture sensitivity level (MSL) handling.