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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs

NXP Semiconductors MRF6S21050LR5

Name: MRF6S21050LR5
Brand: NXP Semiconductors
SKU: MRF6S21050LR5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: MRF6S21050LR5

Manufacturer:: NXP Semiconductors

Category:: Single FETs, MOSFETs

Package:: NI-400

Datasheet:: MRF6S21050LR5.pdf

Description:: RF MOSFET LDMOS 28V NI400

Quantity:: RFQ Add To RFQ list

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Product details

Overview

MRF6S21050LR5 from NXP Semiconductors (formerly Freescale) is an N-channel enhancement-mode lateral RF power MOSFET designed for W-CDMA base station final-stage amplification in the 2110–2170 MHz band. It delivers 11.5 W average output power at 28 V, 450 mA quiescent drain current, with 16 dB power gain and −40 dBc ACPR at ±5 MHz offset under 2-carrier W-CDMA conditions. It operates in Class AB for cellular infrastructure transmitters.

For engineers reviewing the MRF6S21050LR5 datasheet, MRF6S21050LR5 pinout, MRF6S21050LR5 application, or MRF6S21050LR5 equivalent, key selection criteria include its 2140 MHz small-signal impedance matching (Z_source = 3.32 − j6.68 Ω, Z_load = 5.76 − j13.26 Ω), 10:1 VSWR ruggedness, integrated ESD protection (HBM Class 1C), and NI-400S package thermal resistance of 1.28 °C/W at 12 W CW.

Technical Context

This device employs a laterally diffused MOS (LDMOS) structure optimized for wide instantaneous bandwidth and low memory effects in multicarrier W-CDMA systems. Its internally matched input and output enable simplified broadband amplifier design without external tuning networks across 2110–2170 MHz.

It supports stable operation up to 32 V_DD, with junction temperature rated to 225°C and case temperature limited to 150°C. Thermal resistance R_θJC is 1.28 °C/W under 12 W CW conditions at 76°C case temperature, enabling high-reliability deployment in air-cooled macro base station PA modules.

Key Specifications

Parameter	Value and Actual Design Meaning
Frequency Range	2110–2170 MHz - Full coverage of W-CDMA Band I uplink (2110–2170 MHz) for 3G base stations.
Output Power (Avg.)	11.5 W - Sustained average RF output under 2-carrier W-CDMA signal (PAR = 8.5 dB, CCDF 0.01%).
Power Gain	16 dB - Small-signal to large-signal conversion efficiency enabling single-stage PA design.
Drain Efficiency	27.7% - DC-to-RF conversion efficiency at P_out = 11.5 W Avg., reducing thermal load and power supply demand.
VSWR Tolerance	10:1 - Withstands severe load mismatch at 28 Vdc and 2140 MHz without failure, critical for antenna coupling variations.
Junction Temp. Max	225°C - Enables high-power density operation with robust MTTF performance when thermally managed per AN1955.
ESD Rating	HBM Class 1C (≥1 kV) - Integrated protection reduces need for external ESD circuitry in production assemblies.

Pinout & Package

Package: NI-400S (Case 465F-04, Style 1), flange-mounted ceramic/metal hermetic package with solderable baseplate for direct thermal attachment to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
1. Drain	High-power RF output node	Connected to output matching network and heatsink; carries full RF output current and DC bias (28 V).
2. Gate	RF input control terminal	DC-biased to ~2.9 V for 450 mA I_DQ; requires stable gate bias network to maintain Class AB linearity.
3. Source	Common reference and RF return path	Internally bonded to flange; must be low-inductance RF ground connection for stability and harmonic suppression.

Key Features

Feature	Design Value
Internally matched I/O	Eliminates discrete input/output matching components across 2110–2170 MHz, reducing BOM count and layout sensitivity.
Low memory effects	Minimizes AM-PM distortion in dynamic W-CDMA signals, improving EVM and spectral regrowth control.
Rugged 10:1 VSWR	Enables reliable operation into mismatched antenna loads without derating or protection circuitry.
Series-equivalent Z-parameters	Published source/load impedances (e.g., Z_load = 5.76 − j13.26 Ω @ 2140 MHz) enable precise external matching network synthesis.
RoHS-compliant tape & reel	R5 suffix indicates 250-unit packaging on 32 mm, 13-inch reel - compatible with automated SMT placement for high-volume base station PA assembly.

Applications

W-CDMA Base Station Transmitter	TDMA/CDMA Macro Cell PA
Use Scenario: Final-stage power amplifier in outdoor macrocell BTS operating in Band I (2110–2170 MHz) with dual-carrier W-CDMA modulation. IC Role / Device Role / Timing Role: High-efficiency RF power transistor delivering 11.5 W avg. output with −40 dBc ACPR at ±5 MHz offset. Use Value: Meets 3GPP TS 25.104 ACLR requirements while maintaining 27.7% drain efficiency, reducing cooling overhead and AC power draw.	Use Scenario: Linear PA stage in legacy TDMA/CDMA base station upgrades requiring backward-compatible RF output capability. IC Role / Device Role / Timing Role: Lateral MOSFET configured in Class AB for broadband amplification from 2110–2170 MHz with stable gain flatness. Use Value: Delivers 16 dB power gain and −37 dBc IM3 across 60 MHz bandwidth, enabling multistandard support without retuning.
Wideband Multicarrier Amplifier	WLL/Point-to-Point Radio PA
Use Scenario: Driver or final-stage amplifier in multicarrier Doherty architectures for LTE/WiMAX coexistence in shared spectrum bands. IC Role / Device Role / Timing Role: High-VSWR-tolerant RF transistor handling 10:1 mismatch at 2140 MHz while sustaining 50 W CW peak power capability. Use Value: Supports instantaneous bandwidth >60 MHz with low memory effects, enabling clean amplification of composite OFDMA signals.	Use Scenario: Transmit PA in fixed wireless access (FWA) or point-to-point backhaul radios operating in PCS/WCS licensed bands. IC Role / Device Role / Timing Role: 28 V Class AB RF power device delivering 11.5 W avg. output with <1.28 °C/W thermal resistance for passive heatsink designs. Use Value: Enables compact, fanless outdoor radio enclosures by minimizing thermal dissipation and simplifying thermal interface design.

W-CDMA Base Station Transmitter

TDMA/CDMA Macro Cell PA

Use Scenario: Final-stage power amplifier in outdoor macrocell BTS operating in Band I (2110–2170 MHz) with dual-carrier W-CDMA modulation.

IC Role / Device Role / Timing Role: High-efficiency RF power transistor delivering 11.5 W avg. output with −40 dBc ACPR at ±5 MHz offset.

Use Value: Meets 3GPP TS 25.104 ACLR requirements while maintaining 27.7% drain efficiency, reducing cooling overhead and AC power draw.

Use Scenario: Linear PA stage in legacy TDMA/CDMA base station upgrades requiring backward-compatible RF output capability.

IC Role / Device Role / Timing Role: Lateral MOSFET configured in Class AB for broadband amplification from 2110–2170 MHz with stable gain flatness.

Use Value: Delivers 16 dB power gain and −37 dBc IM3 across 60 MHz bandwidth, enabling multistandard support without retuning.

Wideband Multicarrier Amplifier

WLL/Point-to-Point Radio PA

Use Scenario: Driver or final-stage amplifier in multicarrier Doherty architectures for LTE/WiMAX coexistence in shared spectrum bands.

IC Role / Device Role / Timing Role: High-VSWR-tolerant RF transistor handling 10:1 mismatch at 2140 MHz while sustaining 50 W CW peak power capability.

Use Value: Supports instantaneous bandwidth >60 MHz with low memory effects, enabling clean amplification of composite OFDMA signals.

Use Scenario: Transmit PA in fixed wireless access (FWA) or point-to-point backhaul radios operating in PCS/WCS licensed bands.

IC Role / Device Role / Timing Role: 28 V Class AB RF power device delivering 11.5 W avg. output with <1.28 °C/W thermal resistance for passive heatsink designs.

Use Value: Enables compact, fanless outdoor radio enclosures by minimizing thermal dissipation and simplifying thermal interface design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MRF6P21050HR5	Higher P1dB (49.2 dBm vs. 47.9 dBm), 32 V max rating, same NI-400S package but higher thermal resistance (1.42 °C/W).	Better suited for higher-voltage, higher-PAR applications like LTE-A carrier aggregation where headroom matters.	Select when >12 W avg. output or >30 V operation is required; verify thermal margin due to higher R_θJC.
PD85003-E	Lower frequency range (1805–1990 MHz), 10 W avg. output, different NI-780 package with 1.1 °C/W R_θJC.	Optimized for GSM/EDGE macrocells; not suitable for 2100 MHz W-CDMA without recharacterization.	Only viable for Band II/III infrastructure reuse; incompatible with 2110–2170 MHz impedance targets and thermal footprint.

Compared with MRF6S21050LR5, MRF6P21050HR5 offers higher voltage headroom and output compression point but trades off thermal efficiency, while PD85003-E serves adjacent bands with superior thermal resistance but lacks 2100 MHz W-CDMA characterization and ruggedness.

Availability

MRF6S21050LR5 is available at Aetrix Electronics and suitable for W-CDMA base station transmitters, TDMA/CDMA macro cell amplifiers, and wideband multicarrier amplifier designs requiring stable component supply, RoHS compliance, and proven field reliability.

Supply support for MRF6S21050LR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors acquired Freescale's RF Power business in 2015 and continues to manufacture, qualify, and support this LDMOS transistor family for cellular infrastructure.

The MRF6S series was developed specifically for high-linearity, high-efficiency W-CDMA and multicarrier amplifier applications in macro base stations, emphasizing ruggedness, thermal stability, and broadband impedance matchability.

FAQ

What is the maximum continuous drain voltage rating for the MRF6S21050LR5?

The MRF6S21050LR5 has a maximum drain-source voltage (V_DSS) rating of +68 Vdc, with safe continuous operation up to 32 V_DD confirmed per qualification testing. Operation above 32 V requires derating and thermal validation per AN1955 methodology.

Does the MRF6S21050LR5 require external input/output matching networks?

No - the MRF6S21050LR5 is internally matched for both input and output across 2110–2170 MHz, as confirmed in Table 4 footnote and Figure 15 impedance data. External matching is only needed for fine-tuning specific system-level VSWR or harmonic suppression.

What is the thermal resistance (R_θJC) of the MRF6S21050LR5 in its NI-400S package?

The MRF6S21050LR5 exhibits a thermal resistance of 1.28 °C/W from junction to case when operated at 12 W CW with case temperature maintained at 76°C, per Table 2. This value assumes proper mounting to a flat, smooth heatsink with recommended thermal interface material.

Can the MRF6S21050LR5 be used in Class C or switching-mode applications?

No - the MRF6S21050LR5 is characterized and qualified exclusively for Class AB linear operation in W-CDMA and multicarrier applications. Its gate threshold (1–3 V) and transconductance profile are optimized for analog biasing, not digital switching; Class C use voids reliability guarantees.

Is the MRF6S21050LR5 pin-compatible with the MRF6S21050LR3 variant?

Yes - the MRF6S21050LR5 and MRF6S21050LR3 share identical NI-400S package (Case 465F-04, Style 1), pinout (Drain/Gate/Source), and mechanical dimensions. The R5 suffix denotes updated tape-and-reel packaging (250 units/reel); electrical and thermal specs are unchanged from Rev. 2 documentation.

MRF6S21050LR5 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: NI-400

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Technology:: LDMOS

Configuration:: -

Frequency:: 2.16GHz

Gain:: 16dB

Voltage - Test:: 28 V

Current Rating (Amps):: -

Noise Figure:: -

Current - Test:: 450 mA

Power - Output:: 11.5W

Voltage - Rated:: 68 V

Grade:: -

Qualification:: -

Mounting Type:: Chassis Mount

Supplier Device Package:: NI-400

MRF6S21050LR5 FAQ

1.How can I place an order for MRF6S21050LR5 through Aetrix?

Please submit a Request for Quotation (RFQ) for MRF6S21050LR5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MRF6S21050LR5 reliable?

The price and inventory of MRF6S21050LR5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRF6S21050LR5 is usually 5 days.

3.What payment methods are accepted for MRF6S21050LR5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRF6S21050LR5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MRF6S21050LR5?

MRF6S21050LR5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MRF6S21050LR5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MRF6S21050LR5?

For technical support, including MRF6S21050LR5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRF6S21050LR5 requirements.

6.How does Aetrix verify that MRF6S21050LR5 is sourced from the original manufacturer or authorized distributors?

All MRF6S21050LR5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRF6S21050LR5 meets industry standards.

7.What is the process for return or replacement of MRF6S21050LR5?

All MRF6S21050LR5 units undergo pre-shipment inspection (PSI). If there is an issue with MRF6S21050LR5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MRF6S21050LR5 part is unused and in its original packaging.

Return procedure for MRF6S21050LR5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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