NXP Semiconductors MRF6S21060NBR1

Overview

MRF6S21060NBR1 from Freescale Semiconductor is an N-channel enhancement-mode lateral MOSFET RF power transistor designed for W-CDMA base station amplifiers operating at 2110–2170 MHz. It delivers 14 W average output power at 28 VDC, 610 mA quiescent drain current, with 15.5 dB power gain and –40 dBc ACPR (5 MHz offset) in 3.84 MHz bandwidth under 2-carrier W-CDMA conditions. It supports Class AB operation in PCN/PCS, WLL, and TD-SCDMA infrastructure.

For engineers reviewing the MRF6S21060NBR1 datasheet, MRF6S21060NBR1 pinout, MRF6S21060NBR1 application, or MRF6S21060NBR1 equivalent, this device is selected for high-efficiency, broadband RF power amplification in 3G cellular infrastructure where thermal robustness (225°C junction), 5:1 VSWR tolerance, and integrated ESD protection are critical design requirements.

Technical Context

This LDMOS transistor operates as a final-stage RF power amplifier in multi-standard base station transceivers. Its internally matched input and output enable simplified matching network design across 2110–2170 MHz, with series-equivalent large-signal impedance characterized at 2110, 2140, and 2170 MHz for precise load-pull implementation.

The device uses plastic over-molded TO-270 WB-4 packaging (Case 1486-03, Style 1) with lead-free terminations (N suffix), qualified for 32 VDD maximum operation and rated for continuous case temperature up to 150°C. Thermal resistance RθJC is 0.89°C/W at 60 W CW (case temp 79°C), enabling high-power density deployment in air-cooled macrocell PA modules.

Key Specifications

Pinout & Package

Package: TO-270 WB-4 (Case 1486-03, Style 1), plastic over-molded, lead-free (RoHS compliant), 4-terminal surface-mountable package with exposed drain tab for thermal mounting.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRF6S21060NBR1, MRF6P21190HR5 offers significantly higher power and efficiency but demands full circuit redesign, while PD57018-E provides marginal power increase with tighter VSWR tolerance and lower thermal headroom-making MRF6S21060NBR1 the optimal balance of ruggedness, linearity, and legacy compatibility for mid-power W-CDMA/TD-SCDMA base stations.

Availability

MRF6S21060NBR1 is available at Aetrix Electronics and suitable for W-CDMA base station amplifiers, TD-SCDMA macrocell transmitters, and fixed wireless access (FWA) infrastructure requiring stable component supply through end-of-life transition support.

Supply support for MRF6S21060NBR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Freescale Semiconductor (now part of NXP Semiconductors) was a leading designer of RF power transistors for wireless infrastructure, specializing in LDMOS technology for cellular base stations.

The MRF6S21060NBR1 belongs to Freescale's MRF6S family of high-reliability, plastic-packaged RF power MOSFETs engineered specifically for 3G/4G macrocell and microcell base station amplifiers demanding high linearity, thermal resilience, and VSWR ruggedness.

FAQ

What is the maximum continuous drain voltage rating for MRF6S21060NBR1?

The MRF6S21060NBR1 has a maximum drain-source voltage (VDSS) rating of +68 VDC and –0.5 VDC. This allows safe operation up to 32 VDD per qualification, with recommended DC supply at 28 V for optimal W-CDMA performance. Exceeding 32 VDD voids reliability guarantees and risks gate oxide breakdown.

Does MRF6S21060NBR1 require external matching networks?

MRF6S21060NBR1 is internally matched for both input and output across 2110–2170 MHz, eliminating the need for discrete matching components in narrowband W-CDMA applications. However, external microstrip tuning (e.g., Z1–Z16 per Figure 1) is required for production-grade broadband performance and optimal ACPR/IM3.

What is the thermal resistance junction-to-case for MRF6S21060NBR1?

The thermal resistance junction-to-case (RθJC) for MRF6S21060NBR1 is 0.89°C/W when operating at 60 W CW with case temperature at 79°C, and 1.04°C/W at 14 W CW with case temperature at 76°C. These values assume proper mechanical mounting of the exposed drain tab to a flat, polished heatsink with thermal interface material.

Is MRF6S21060NBR1 RoHS compliant and lead-free?

Yes, MRF6S21060NBR1 carries the "N" suffix indicating lead-free terminations and full compliance with RoHS Directive 2011/65/EU. It is qualified to MSL Level 3 per J-STD-020 and supports lead-free reflow profiles with peak temperature up to 260°C.

What is the gate threshold voltage range for MRF6S21060NBR1?

The gate threshold voltage (VGS(th)) for MRF6S21060NBR1 is specified from 1.5 VDC to 2.5 VDC at VDS = 10 VDC and ID = 200 μADC. The typical gate quiescent voltage (VGS(Q)) under functional test conditions (VDD = 28 VDC, IDQ = 610 mADC) is 2.8 VDC, confirming stable Class AB bias point control.