NXP Semiconductors MRF6S21100HR3

Overview

MRF6S21100HR3 from NXP Semiconductors (formerly Freescale) is an N-channel enhancement-mode lateral MOSFET RF power transistor designed for base station amplifier stages in 2110–2170 MHz W-CDMA and TD-SCDMA systems. It delivers 23 W average RF output power at 28 Vdc, achieves 15.9 dB power gain and 27.6% drain efficiency under 2-carrier W-CDMA conditions, and supports 10:1 VSWR tolerance at 2140 MHz with 100 W CW capability.

For engineers reviewing the MRF6S21100HR3 datasheet, MRF6S21100HR3 pinout, MRF6S21100HR3 application, or MRF6S21100HR3 equivalent, key selection criteria include its 2110–2170 MHz frequency band alignment, internal input/output matching for simplified PCB layout, integrated ESD protection rated Class 3A HBM, and qualification for up to 32 VDD operation in high-reliability cellular infrastructure designs.

Technical Context

This device operates as a Class AB RF power amplifier stage with internally matched 50 Ω input and output impedance networks optimized for 2110–2170 MHz. Its lateral LDMOS structure enables wide instantaneous bandwidth and low memory effects-critical for multicarrier W-CDMA and TD-SCDMA signals with 8.5 dB PAR.

Thermal design is anchored by a 0.52 °C/W junction-to-case thermal resistance at 23 W CW operation, with maximum junction temperature rated at 200 °C and case temperature limited to 150 °C. The device uses series-equivalent large-signal impedance characterization (e.g., Z_source = 1.61 − j2.6 Ω at 2110 MHz) to support external matching network synthesis.

Key Specifications

Pinout & Package

Package: NI-780 (Case 465-06, Style 1), hermetically sealed ceramic/metal flange package with solderable baseplate for direct thermal mounting. Dimensions: 34.16 mm × 9.91 mm × 4.32 mm (L×W×H), flange-mounted with 3-terminal configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRF6S21100HR3, MRF6P21190HR3 offers higher peak power headroom for future-proofing, while PD57018-E trades hermetic reliability and VSWR robustness for board-level integration flexibility-neither is pin-compatible, and both require revalidation of bias networks and thermal management.

Availability

MRF6S21100HR3 is available at Aetrix Electronics and suitable for W-CDMA base station development, TD-SCDMA infrastructure deployment, and fixed wireless access (FWA) transmitter design requiring stable component supply and long-lifecycle support.

Supply support for MRF6S21100HR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors acquired Freescale's RF Power business in 2015 and maintains full technical and supply chain continuity for legacy LDMOS products.

The MRF6S21100HR3 belongs to the MRF6S family of high-efficiency lateral MOSFETs engineered specifically for 3G/4G macrocell and microcell base station power amplifiers operating between 1.8–2.7 GHz.

FAQ

What is the maximum continuous drain voltage rating for the MRF6S21100HR3?

The MRF6S21100HR3 has a maximum drain-source voltage (V_DSS) rating of +68 Vdc, with a minimum of −0.5 Vdc. This allows safe operation up to 32 VDD in Class AB amplifier configurations while maintaining margin against transient voltage spikes in base station power supplies. The MRF6S21100HR3 is qualified for continuous operation at 28 Vdc under all specified RF load conditions.

Does the MRF6S21100HR3 require external input/output matching networks?

No-the MRF6S21100HR3 is internally matched for 50 Ω operation across 2110–2170 MHz, eliminating the need for discrete input/output matching components in standard reference designs. However, external harmonic terminations and bias decoupling remain essential, as shown in Figures 1 and 16 of the MRF6S21100HR3 datasheet. The MRF6S21100HR3 achieves this via on-die impedance transformation, reducing layout sensitivity and component count.

What is the thermal resistance junction-to-case for the MRF6S21100HR3 at 23 W average output?

The MRF6S21100HR3 exhibits a thermal resistance of 0.52 °C/W from junction to case when operating at 23 W average output power with case temperature held at 77 °C. This value is measured under pulsed CW conditions and reflects the device's ability to transfer heat efficiently through its NI-780 metal-ceramic flange. Proper thermal interface material and heatsink design are required to maintain case temperature ≤150 °C during continuous operation of the MRF6S21100HR3.

Can the MRF6S21100HR3 be used in TD-SCDMA applications?

Yes-the MRF6S21100HR3 is explicitly characterized for TD-SCDMA operation, including 3-carrier and 6-carrier configurations at 2017.5 MHz. Data in Figures 18–22 and Table 6 of the MRF6S21100HR3 datasheet confirm ALT (Adjacent Channel Leakage Ratio) performance of <−45 dBc and drain efficiency >12% across 3–6 carriers. The MRF6S21100HR3 supports TD-SCDMA's 1.28 MHz channel bandwidth and 8.5 dB PAR with validated test circuits and impedance data.

What ESD protection level does the MRF6S21100HR3 provide?

The MRF6S21100HR3 integrates on-chip ESD protection rated to Human Body Model (HBM) Class 3A (≥8 kV), Machine Model (MM) Class A (≥200 V), and Charge Device Model (CDM) Class IV (≥1000 V). This eliminates the need for external ESD diodes in handling and assembly, and ensures robustness during board-level testing and field operation. All ESD ratings are verified per JESD22-A114, JESD22-A115, and JESD22-C101 standards for the MRF6S21100HR3.