NXP Semiconductors MRF6S21100HSR3

Overview

MRF6S21100HSR3 from NXP Semiconductors (formerly Freescale) is an N-channel enhancement-mode lateral RF power MOSFET optimized for 2110–2170 MHz W-CDMA base station amplifiers. It delivers 23 W average RF output power at 28 Vdc, 950 mA quiescent drain current, with 15.9 dB power gain and 27.6% drain efficiency under 2-carrier W-CDMA conditions (3.84 MHz channel bandwidth, PAR = 8.5 dB). It operates in Class AB for cellular infrastructure transmitters.

For engineers reviewing the MRF6S21100HSR3 datasheet, MRF6S21100HSR3 pinout, MRF6S21100HSR3 application, or MRF6S21100HSR3 equivalent, this device is selected for high-linearity, high-efficiency RF final-stage amplification in 3G macrocell and microcell base stations requiring robust VSWR tolerance and low memory effects.

Technical Context

This LDMOS transistor uses a laterally diffused structure with internal input/output matching networks, enabling broadband operation across 2110–2170 MHz without external tuning components. Its gate threshold voltage (1–3 Vdc) and quiescent gate voltage (2–4 Vdc at IDQ = 950 mA) support stable Class AB biasing using simple resistive-divider or active gate control circuits.

The device features integrated ESD protection rated to HBM Class 3A, MM Class A, and CDM Class IV, and is qualified for up to +32 Vdc drain supply. Thermal resistance from junction to case is 0.52 °C/W at 23 W CW, supporting reliable operation at TC ≤ 150°C and TJ ≤ 200°C.

Key Specifications

Pinout & Package

Package: NI-780S (Case 465A-06, Style 1), hermetically sealed ceramic/metal flange-mount package with solderable lid. Dimensions: 20.45–20.70 mm × 9.65–9.91 mm × 4.32–5.33 mm (L×W×H), flange-mounted for direct thermal path to heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power MOSFET applications.

Compared with PD85004 and MRFE6VP61K25H, the MRF6S21100HSR3 offers optimal balance of bandwidth, linearity, and thermal efficiency specifically for 2110–2170 MHz W-CDMA final-stage amplification - making it the preferred choice for cost-sensitive, thermally constrained macrocell and microcell deployments.

Availability

MRF6S21100HSR3 is available at Aetrix Electronics and suitable for W-CDMA base station transmitters, TD-SCDMA microcell nodes, and fixed wireless access equipment requiring stable component supply, long-lifecycle availability, and RoHS-compliant packaging.

Supply support for MRF6S21100HSR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors acquired Freescale Semiconductor in 2015 and continues to manufacture, support, and qualify its RF power portfolio for cellular infrastructure applications.

The MRF6S21100HSR3 belongs to the MRF6S family of LDMOS RF power transistors designed specifically for high-efficiency, high-linearity 3G/4G base station final-stage amplification in macrocell and microcell architectures.

FAQ

What is the maximum drain supply voltage for the MRF6S21100HSR3?

The MRF6S21100HSR3 is qualified for operation up to +32 Vdc drain supply voltage, though typical application uses 28 Vdc. Absolute maximum rating is +68 Vdc (VDSS), but sustained operation above 32 Vdc is not recommended due to reliability and thermal constraints. Always refer to the Safe Operating Area (SOA) curves in the official datasheet when designing for overvoltage transients.

Does the MRF6S21100HSR3 require external matching networks?

No - the MRF6S21100HSR3 is internally matched for both input and output in a 50 Ω system across 2110–2170 MHz. The datasheet provides series-equivalent source and load impedances (e.g., Zsource = 1.52 − j2.3 Ω at 2170 MHz) to guide matching network optimization, but basic operation only requires DC blocking capacitors and bias chokes per the reference test circuit.

What is the thermal resistance (RθJC) of the MRF6S21100HSR3?

The MRF6S21100HSR3 has a thermal resistance of 0.52 °C/W (junction-to-case) when operating at 23 W average output power with case temperature held at 77°C. This value is measured under specified test conditions (per AN1955) and is critical for heatsink sizing - a 0.52 °C/W RθJC enables efficient thermal transfer in compact base station PA modules.

Can the MRF6S21100HSR3 be used in TD-SCDMA applications?

Yes - the MRF6S21100HSR3 is characterized for TD-SCDMA operation at 2017.5 MHz with 3- and 6-carrier configurations. At IDQ = 800 mA and 28 Vdc, it achieves ≥15% drain efficiency and ALT ≤ −45 dBc, meeting China's 3GPP-compliant TD-SCDMA spectral requirements. Dedicated test circuits and impedance data are provided in the datasheet for TD-SCDMA-specific design.

What does the 'R3' suffix indicate in MRF6S21100HSR3?

The 'R3' suffix denotes RoHS-compliant tape-and-reel packaging: 250 units per 56 mm wide, 13-inch diameter reel. This format supports automated surface-mount assembly in high-volume production of RF power amplifier modules. The 'S' in 'HSR3' identifies the NI-780S package variant (Case 465A-06), distinct from the NI-780 (Case 465-06) used in the HR3 version.