NXP Semiconductors MRF6S21100NBR1

Overview

MRF6S21100NBR1 from Freescale Semiconductor is a lateral N-channel enhancement-mode RF power MOSFET designed for 2110–2170 MHz W-CDMA base station amplifiers. It delivers 23 W average RF output power at 28 VDC, 1050 mA quiescent drain current, with 14.5 dB power gain and 25.5% drain efficiency under two-carrier W-CDMA conditions. Its primary circuit role is as a final-stage RF power amplifier in macrocell and microcell infrastructure.

For engineers reviewing the MRF6S21100NBR1 datasheet, MRF6S21100NBR1 pinout, MRF6S21100NBR1 application, or MRF6S21100NBR1 equivalent, key selection criteria include its 225°C junction rating, internal input/output matching, 5:1 VSWR ruggedness at 2140 MHz, ESD protection per JESD22-A114 Class 1B, and RoHS-compliant lead-free terminations (N suffix).

Technical Context

This device operates in Class AB for wideband cellular infrastructure applications including W-CDMA, TD-SCDMA, and multicarrier CDMA. Its internally matched design eliminates external tuning components at 2110–2170 MHz, and it is characterized using series-equivalent large-signal impedance parameters (e.g., Z_source = 3.34 – j3.90 Ω at 2140 MHz, Z_load = 1.53 – j3.19 Ω).

The MRF6S21100NBR1 supports stable operation up to 32 VDD and handles 100 W CW into 5:1 VSWR without damage. Thermal resistance is 0.66 °C/W (junction-to-case, 23 W CW, T_C = 73°C), enabling high-reliability deployment in air- or liquid-cooled base station PA modules.

Key Specifications

Pinout & Package

Package: TO-270 WB-4 (Case 1486-03, Style 1), plastic overmolded, lead-free (RoHS compliant), 225°C capable. Pin 1: Gate, Pin 2: Drain, Pin 3: Source, Pin 4: Source (dual-source configuration for low-inductance grounding).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with MRF6S21100NBR1, MRFE6S9060NR1 offers higher power but lower gain and different thermal impedance, while QPD1006 provides GaN-level efficiency in a non-pin-compatible package-neither is a drop-in substitute, but both serve adjacent 2.1 GHz infrastructure tiers.

Availability

MRF6S21100NBR1 is available at Aetrix Electronics and suitable for W-CDMA base station amplifiers, TD-SCDMA microcells, and wireless local loop (WLL) hubs requiring stable component supply through end-of-life transitions.

Supply support for MRF6S21100NBR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Freescale Semiconductor (now part of NXP Semiconductors) specialized in high-performance RF power transistors for wireless infrastructure, automotive radar, and industrial heating.

The MRF6S21100NBR1 belongs to Freescale's MRF6S family of LDMOS RF power transistors, engineered specifically for linear, high-efficiency operation in 3G/4G cellular base stations and broadband wireless access equipment.

FAQ

What is the maximum continuous drain voltage rating for the MRF6S21100NBR1?

The MRF6S21100NBR1 has a maximum drain-source voltage (V_DSS) rating of +68 VDC. This allows safe operation up to 32 VDD in Class AB amplifier designs while maintaining margin against transient voltage spikes. The absolute maximum rating is specified in Table 1 of the Freescale datasheet Rev. 3 (Dec. 2008), and operation above 28 VDC requires careful thermal and stability validation. MRF6S21100NBR1 must never be biased beyond +68 VDC under any condition.

Does the MRF6S21100NBR1 require external input/output matching networks?

No, the MRF6S21100NBR1 is internally matched for operation between 2110–2170 MHz. Its input and output impedances are pre-characterized (e.g., Z_source ≈ 3.34 – j3.90 Ω, Z_load ≈ 1.53 – j3.19 Ω at 2140 MHz), enabling direct integration into 50 Ω systems using only DC blocking and bias chokes. MRF6S21100NBR1 eliminates the need for discrete matching components in standard W-CDMA reference designs, reducing layout sensitivity and cost.

What is the thermal resistance (R_θJC) of the MRF6S21100NBR1 under typical operating conditions?

The MRF6S21100NBR1 has a junction-to-case thermal resistance of 0.66 °C/W when operating at 23 W average output power with case temperature maintained at 73°C. This value is measured per AN1955 methodology and reflects real-world thermal performance in production-mount configurations. MRF6S21100NBR1's low R_θJC supports high-power density in compact base station PA modules with passive or forced-air cooling.

Is the MRF6S21100NBR1 suitable for TD-SCDMA applications?

Yes, the MRF6S21100NBR1 is explicitly characterized for TD-SCDMA operation at 2017.5 MHz, delivering 12–18 W average output with ACPR <−45 dBc and ALT <−50 dBc across 3–6 carriers. Freescale provides dedicated test circuits, impedance data, and spectral plots (Figures 16–22) confirming linearity and efficiency in TD-SCDMA modulation. MRF6S21100NBR1 meets the stringent ACLR requirements of Chinese 3G infrastructure deployments.

What does the "NBR1" suffix indicate in MRF6S21100NBR1?

The "N" denotes lead-free (RoHS-compliant) terminations; "B" indicates the TO-270 WB-4 package variant (Case 1486-03); "R1" specifies tape-and-reel packaging with 500 units per 44 mm, 13-inch reel. This distinguishes it from the "NR1" variant (TO-272 WB-4, Case 1484-04). MRF6S21100NBR1 is not interchangeable with MRF6S21100NR1 due to mechanical and thermal differences-pinout is identical, but mounting and heatsinking differ.