NXP Semiconductors MRF6S21140HR3

Overview

MRF6S21140HR3 from Freescale Semiconductor is an N-channel enhancement-mode lateral RF power MOSFET designed for W-CDMA base station amplifiers operating at 2110–2170 MHz. It delivers 30 W average output power at 28 VDC with 15.5 dB power gain and 27.5% drain efficiency under 2-carrier W-CDMA conditions (PAR = 8.5 dB, 3.84 MHz channel bandwidth), and supports 140 W CW output into 10:1 VSWR loads.

For engineers reviewing the MRF6S21140HR3 datasheet, MRF6S21140HR3 pinout, MRF6S21140HR3 application, or MRF6S21140HR3 equivalent, this device is selected for high-efficiency, high-linearity Doherty and multicarrier amplifier designs in cellular infrastructure where thermal robustness (T_J = 225°C), ESD protection (HBM Class 2), and internal input/output matching are critical design requirements.

Technical Context

This RF power transistor uses a laterally diffused MOS (LDMOS) structure optimized for broadband operation across 2110–2170 MHz. Its internally matched 25 Ω source and load impedances (e.g., Z_source = 1.37 – j2.78 Ω, Z_load = 7.58 – j10.23 Ω at 2140 MHz) reduce external matching complexity while maintaining linearity metrics including –37 dBc IM3 and –41 dBc ACPR in 3.84 MHz bandwidth.

The device operates in Class AB with quiescent drain current of 1200 mA at 28 VDC and gate bias of 2.8 VDC. It is qualified for up to 32 VDD operation and features integrated ESD protection per JESD22-A114 (Class 2), JESD22-A115 (Class A), and JESD22-C101 (Class IV).

Key Specifications

Pinout & Package

Package: NI-880S (Case 465C-02, Style 1), thermally enhanced ceramic/metal flange-mount package with solderable baseplate for direct heatsink attachment. Thermal resistance R_θJC = 0.35°C/W at 140 W CW (case temp = 80°C).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRF6S21140HR3, the MRFE6S9060NR1 offers higher output power but in a different frequency band, requiring redesign of matching components; the QPD1025 delivers superior efficiency and bandwidth using GaN but introduces gate bias complexity and thermal interface challenges not present with the LDMOS-based MRF6S21140HR3.

Availability

MRF6S21140HR3 is available at Aetrix Electronics and suitable for W-CDMA base station transmitters, Doherty amplifier carrier paths, and TDMA/CDMA multicarrier amplifiers requiring stable component supply, long-lifecycle support, and traceable sourcing for telecom infrastructure programs.

Supply support for MRF6S21140HR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Freescale Semiconductor (now part of NXP Semiconductors) is a global leader in RF power solutions, specializing in high-voltage LDMOS transistors for cellular infrastructure.

The MRF6S21140HR3 belongs to Freescale's MRF6S series of RF power MOSFETs engineered specifically for high-efficiency, high-linearity W-CDMA and multicarrier amplifier applications in macrocell and microcell base stations.

FAQ

What is the maximum continuous drain voltage rating for the MRF6S21140HR3?

The MRF6S21140HR3 has a maximum drain-source voltage rating (V_DSS) of +68 VDC and –0.5 VDC. This allows safe operation at nominal 28 VDC supply with 15% overhead for transient voltage spikes, and qualifies the device for use up to 32 VDD per Freescale's reliability testing. The rating is confirmed in Table 1 of the official datasheet Rev. 5 (2010).

Does the MRF6S21140HR3 require external input/output matching networks?

No, the MRF6S21140HR3 is internally matched to 25 Ω at both input and output across 2110–2170 MHz, as stated in Table 4 footnote and Figure 15. While external bias and stabilization networks (e.g., gate resistors, RF chokes, bypass capacitors) are required per the test circuit in Table 5, discrete impedance transformers are unnecessary for fundamental-band operation - significantly simplifying PCB layout and tuning effort for the MRF6S21140HR3.

What thermal resistance value applies to the MRF6S21140HR3 at 30 W average output?

At 30 W CW output with case temperature of 75°C, the MRF6S21140HR3 exhibits a junction-to-case thermal resistance (R_θJC) of 0.38°C/W, per Table 2. This value directly determines heatsink sizing: for example, with T_J = 225°C max and T_C = 75°C, allowable power dissipation is (225 – 75)/0.38 ≈ 395 W - far exceeding the 30 W operational condition, confirming robust thermal margin for the MRF6S21140HR3.

Is the MRF6S21140HR3 suitable for Doherty amplifier configurations?

Yes, the MRF6S21140HR3 is explicitly optimized for Doherty applications, as highlighted in the Features section of the datasheet. Its linearized gain compression behavior, stable phase response, and internally matched 25 Ω impedance simplify integration into carrier/peaking path topologies - enabling high-efficiency operation at signal back-off levels typical of OFDM and W-CDMA waveforms without requiring additional linearization circuitry for the MRF6S21140HR3.

What ESD protection level does the MRF6S21140HR3 provide?

The MRF6S21140HR3 provides Human Body Model (HBM) Class 2 (≥2 kV), Machine Model (MM) Class A, and Charge Device Model (CDM) Class IV ESD protection, per Table 3. These ratings are verified per JESD22-A114, JESD22-A115, and JESD22-C101 standards, allowing standard SMT assembly processes without specialized ESD handling - a key reliability feature confirmed in the Freescale RF Device Data document for the MRF6S21140HR3.