NXP Semiconductors MRF6S21140HR5

Overview

MRF6S21140HR5 from NXP Semiconductors (formerly Freescale) is a lateral N-channel enhancement-mode RF power MOSFET designed for W-CDMA base station final-stage amplification in the 2110–2170 MHz band. It delivers 30 W average output power at 28 V, with 15.5 dB power gain, 27.5% drain efficiency, and –41 dBc ACPR at ±5 MHz offset under 2-carrier W-CDMA conditions - enabling high-linearity multicarrier PA designs for macrocell infrastructure.

For engineers reviewing the MRF6S21140HR5 datasheet, MRF6S21140HR5 pinout, MRF6S21140HR5 application, or MRF6S21140HR5 equivalent, this device is selected for its validated Doherty-ready impedance matching, 10:1 VSWR ruggedness at 140 W CW, integrated ESD protection (HBM Class 2), and RoHS-compliant NI-880S package - critical for 3G/4G LTE base station transceivers requiring thermal stability up to 225°C junction temperature.

Technical Context

This device operates as a Class AB RF power amplifier transistor optimized for broadband W-CDMA signal amplification. Its internally matched 25 Ω input/output impedance simplifies external network design, while series-equivalent large-signal Z_source (1.37 – j2.78 Ω) and Z_load (7.58 – j10.23 Ω) at 2140 MHz enable precise Doherty combiner tuning.

Thermal performance is defined by R_θJC = 0.38 °C/W at 30 W CW (T_C = 75°C), supporting high-reliability operation under pulsed and continuous wave conditions. The device sustains 28 V DC operation with gate threshold voltage of 1–3 V and is qualified for up to 32 V_DD transient tolerance.

Key Specifications

Pinout & Package

Package: NI-880S (Case 465C-02, Style 1), ceramic/metal flanged package with solderable baseplate for direct thermal mounting. Dimensions: 19.05 mm × 12.70 mm × 4.57 mm (L × W × H).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRF6S21140HR5, AFM906S offers +10 W output and better thermal resistance but demands PCB redesign, while MRF6P21190HR5 trades gain and efficiency for broader bandwidth and higher PEP - making MRF6S21140HR5 the optimal choice for cost-sensitive, single-band W-CDMA macrocell deployments.

Availability

MRF6S21140HR5 is available at Aetrix Electronics and suitable for W-CDMA base station transmitters, Doherty amplifier main arms, and point-to-multipoint wireless access equipment requiring stable component supply across extended production lifecycles.

Supply support for MRF6S21140HR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with deep heritage in RF power technology inherited from Freescale.

The MRF6S21140HR5 belongs to NXP's high-reliability RF LDMOS portfolio, engineered specifically for 3G/4G cellular infrastructure applications demanding ruggedness, linearity, and long-term thermal stability in uncontrolled environmental deployments.

FAQ

What is the maximum continuous drain voltage rating for the MRF6S21140HR5?

The MRF6S21140HR5 has a maximum drain-source voltage (V_DSS) rating of +68 Vdc, with a minimum of –0.5 Vdc. This rating supports safe operation under transient overvoltage conditions up to 32 V_DD, as confirmed in the Absolute Maximum Ratings table of the official datasheet Rev. 5 (Feb. 2010). The MRF6S21140HR5 is qualified for sustained 28 Vdc operation in Class AB amplifier configurations.

Does the MRF6S21140HR5 require external input/output matching networks?

No - the MRF6S21140HR5 is internally matched to 25 Ω on both input and output, as explicitly stated in Table 4 footnote and Figure 15 impedance data. While external harmonic filtering and bias decoupling remain necessary, the MRF6S21140HR5 eliminates discrete matching inductors/capacitors typically needed for unmatched RF MOSFETs, reducing bill-of-materials and layout complexity.

What thermal resistance value applies to the MRF6S21140HR5 at 30 W average output?

At 30 W average output power and case temperature of 75°C, the MRF6S21140HR5 exhibits a thermal resistance of R_θJC = 0.38 °C/W, per Table 2 of the datasheet. This value is measured under CW conditions and forms the basis for heatsink sizing calculations - for example, maintaining T_J ≤ 225°C requires a heatsink with R_θCS + R_θSA ≤ 0.62 °C/W when ambient is 70°C.

Is the MRF6S21140HR5 suitable for Doherty amplifier topologies?

Yes - the MRF6S21140HR5 is explicitly optimized for Doherty applications, as highlighted in the Features section of the datasheet. Its published series-equivalent source and load impedances (e.g., Z_load = 7.58 – j10.23 Ω at 2140 MHz) provide the precise load-pull data required to design efficient main/auxiliary amplifier combining networks without iterative EM simulation.

What ESD protection level does the MRF6S21140HR5 provide?

The MRF6S21140HR5 provides integrated ESD protection rated at Human Body Model (HBM) Class 2 (≥2 kV), Machine Model (MM) Class A (≥200 V), and Charge Device Model (CDM) Class IV (≥1 kV), per Table 3. This eliminates the need for external ESD diodes in the RF path and ensures robust handling during PCB assembly and field maintenance - a key reliability feature for base station serviceability.