NXP Semiconductors MRF6S21190HSR3

Overview

MRF6S21190HSR3 from Freescale Semiconductor is an N-channel enhancement-mode lateral RF power MOSFET designed for W-CDMA base station amplifiers operating at 2110–2170 MHz. It delivers 54 W average output power at 28 V, 16 dB power gain, and 29% drain efficiency under single-carrier W-CDMA conditions (3GPP TM1, 64 DPCH, 7.5 dB PAR), targeting high-linearity cellular infrastructure final-stage PA applications.

For engineers reviewing the MRF6S21190HSR3 datasheet, MRF6S21190HSR3 pinout, MRF6S21190HSR3 application, or MRF6S21190HSR3 equivalent, key selection considerations include its 2110–2170 MHz bandwidth, NI-880 package with drain-gate-source terminal configuration, guaranteed 10:1 VSWR tolerance at 2140 MHz, integrated ESD protection (HBM Class 1B), and suitability for digital predistortion systems requiring low memory effects.

Technical Context

This device employs a laterally diffused MOS (LDMOS) structure optimized for broadband W-CDMA operation, with internally matched input and output impedances-Z_source ≈ 6.45 − j6.36 Ω and Z_load ≈ 2.54 + j1.18 Ω at 2140 MHz-enabling simplified external matching network design. Its thermal resistance R_θJC is 0.30 °C/W at 83°C case temperature and 56 W CW, supporting high-reliability operation up to T_J = 200°C.

The MRF6S21190HSR3 is characterized for digital predistortion (DPD) use: it exhibits 6.1 dB output PAR at 0.01% CCDF probability, −38 dBc ACPR at ±5 MHz offset in 3.84 MHz channel bandwidth, and <0.52° average phase deviation over 60 MHz bandwidth at 175 W CW-critical for wide instantaneous bandwidth linearization.

Key Specifications

Pinout & Package

The MRF6S21190HSR3 is housed in the NI-880 metal-ceramic flanged package (Case 465B-03, Style 1), featuring a hermetically sealed ceramic insulator lid and copper-tungsten flange for high thermal conductivity and RF shielding. The package is RoHS-compliant and supplied in tape-and-reel (250 units per 56 mm, 13-inch reel).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with the MRF6S21190HSR3, the MRFE6S9190HR5 offers higher peak power at elevated voltage and different thermal footprint, while the QPD1025 delivers GaN-level efficiency in a surface-mount form factor-neither is pin-compatible, but both address overlapping infrastructure PA requirements with distinct trade-offs in supply, layout, and thermal management.

Availability

MRF6S21190HSR3 is available at Aetrix Electronics and suitable for W-CDMA base station final-stage amplifiers, TDMA/CDMA multicarrier transmitters, and wireless local loop (WLL) outdoor units requiring stable component supply and long-lifecycle support.

Supply support for MRF6S21190HSR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Freescale Semiconductor (now part of NXP Semiconductors) is a global leader in RF power solutions, specializing in high-reliability semiconductor devices for wireless infrastructure and industrial applications.

The MRF6S21190HSR3 belongs to Freescale's MRF6S family of LDMOS RF power transistors, engineered specifically for 3G/4G cellular base station amplifiers demanding high linearity, ruggedness, and thermal stability in continuous high-power operation.

FAQ

What is the maximum continuous wave (CW) output power rating for the MRF6S21190HSR3?

The MRF6S21190HSR3 is rated for 175 W CW output power at 32 Vdc and case temperature TC = 25°C, with derating to 1 W/°C above 25°C. This rating reflects its capability to sustain high-power operation under worst-case thermal conditions, validated per Freescale's test methodology in the MRF6S21190H datasheet Rev. 1.

Does the MRF6S21190HSR3 require external matching components for 2110–2170 MHz operation?

No-the MRF6S21190HSR3 is internally matched for 2110–2170 MHz operation, with characterized source and load impedances provided in the datasheet (e.g., Z_source = 6.446 − j6.355 Ω and Z_load = 2.536 + j1.175 Ω at 2140 MHz). External matching is optional and used only for fine-tuning gain flatness or optimizing ACPR beyond baseline performance.

What is the gate threshold voltage range for the MRF6S21190HSR3?

The gate threshold voltage (V_GS(th)) for the MRF6S21190HSR3 is specified as 1–3 Vdc (min–max) at V_DS = 10 Vdc and I_D = 420 μAdc. This range ensures predictable turn-on behavior across process variation and supports stable Class AB biasing with V_GS(Q) = 2–4 Vdc at I_DQ = 1600 mA.

How does the MRF6S21190HSR3 support digital predistortion (DPD) implementation?

The MRF6S21190HSR3 supports DPD through low memory effects (0.52° average phase deviation over 60 MHz), wide instantaneous bandwidth (50 MHz video bandwidth at 175 W PEP), and published large-signal impedance data. These features enable accurate behavioral modeling and effective error correction-verified under 3GPP TM1 with 64 DPCH and 7.5 dB PAR input.

What package type and pin configuration does the MRF6S21190HSR3 use?

The MRF6S21190HSR3 uses the NI-880 metal-ceramic flanged package (Case 465B-03, Style 1) with three terminals: Pin 1 = Drain (flange-connected), Pin 2 = Gate, Pin 3 = Source. The flange serves as both thermal path and RF ground reference, requiring direct mounting to a heatsink with low-thermal-resistance interface material.