NXP Semiconductors MRF6S23100HR3

Overview

MRF6S23100HR3 from Freescale Semiconductor is an N-channel enhancement-mode lateral RF power MOSFET optimized for 2300–2400 MHz CDMA base station amplifiers, delivering 20 W average output power at 28 V with 15.4 dB power gain and 23.5% drain efficiency under 2-carrier W-CDMA conditions (2390 MHz, 3.84 MHz channel bandwidth, PAR = 8.5 dB).

For engineers reviewing the MRF6S23100HR3 datasheet, MRF6S23100HR3 pinout, MRF6S23100HR3 application, or MRF6S23100HR3 equivalent, this device supports critical RF front-end design tasks including multicarrier amplifier stages, WiMAX/WiBro infrastructure transmitters, and Class AB/C WLL power amplification where ruggedness, linearity, and thermal stability are essential.

Technical Context

This LDMOS transistor operates in Class AB or Class C configurations with internally matched input and output impedances-Z_source = 2.06 − j4.69 Ω and Z_load = 12.20 − j6.20 Ω at 2300 MHz-enabling simplified broadband matching network design. Its series-equivalent large-signal impedance characterization supports accurate load-pull simulation and PA layout optimization.

The device features integrated ESD protection rated to HBM Class 3A, qualified for up to +32 V_DD, and capable of surviving 10:1 VSWR at 28 Vdc and 2390 MHz with 100 W CW output. Junction temperature rating of 225°C and R_θJC = 0.53°C/W (at 100 W) enable high-reliability operation in thermally constrained macrocell and remote radio head environments.

Key Specifications

Pinout & Package

Package: NI-780 (Case 465-06, Style 1), hermetically sealed ceramic/metal flange-mount package with integral heat slug. Dimensions: 34.16 mm × 9.91 mm × 4.32 mm (L × W × H), flange-mounted for direct thermal coupling to heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power MOSFET applications.

Compared with NXP MRFE6S9060N and Qorvo QPD1025, the MRF6S23100HR3 offers proven LDMOS ruggedness, internal matching, and straightforward Class AB biasing-making it optimal for cost-sensitive, high-volume CDMA/WiMAX infrastructure where design cycle time and supply chain maturity are critical.

Availability

MRF6S23100HR3 is available at Aetrix Electronics and suitable for CDMA base station development, WiMAX infrastructure deployment, and WLL point-to-multipoint amplifier design requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant manufacturing traceability.

Supply support for MRF6S23100HR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Freescale Semiconductor (now part of NXP Semiconductors) is a global leader in RF power solutions, specializing in high-reliability semiconductor devices for wireless infrastructure, automotive radar, and industrial heating.

The MRF6S23100HR3 belongs to Freescale's MRF6S family of laterally diffused MOSFETs engineered specifically for 2–2.7 GHz cellular infrastructure amplifiers-emphasizing linearity, ruggedness, and manufacturability in high-volume base station production.

FAQ

What is the maximum continuous drain voltage rating for the MRF6S23100HR3?

The MRF6S23100HR3 has a maximum drain-source voltage (V_DSS) rating of +68 Vdc, allowing safe operation under transient overvoltage conditions and reflected power events common in base station antenna mismatches. This rating supports reliable use in Class AB/C amplifier topologies with 28 V or 32 V DC supplies, as confirmed in Table 1 of the official Freescale datasheet (Rev. 2, Dec. 2008). The MRF6S23100HR3 is qualified for up to 32 V_DD operation per its features list.

Does the MRF6S23100HR3 require external matching components for 2300–2400 MHz operation?

No-the MRF6S23100HR3 is internally matched for both input and output at 2300–2400 MHz, as explicitly stated in Table 4 footnote and the Features section. Its series-equivalent source and load impedances (e.g., Z_source = 2.06 − j4.69 Ω, Z_load = 12.20 − j6.20 Ω at 2300 MHz) are characterized to enable direct integration into 50 Ω systems using simple microstrip transitions. External matching is optional only for fine-tuning narrowband performance or optimizing for alternate frequencies outside the specified band.

What thermal resistance does the MRF6S23100HR3 exhibit under full-power operation?

The MRF6S23100HR3 has a junction-to-case thermal resistance (R_θJC) of 0.53°C/W when operating at 100 W CW with case temperature at 80°C, as specified in Table 2. This value is measured under standardized conditions per AN1955 and enables accurate MTTF prediction using Freescale's online calculator. For 20 W average W-CDMA operation, thermal design must account for peak envelope power and duty cycle to maintain T_J ≤ 225°C.

Is the MRF6S23100HR3 RoHS compliant and what packaging format is supplied?

Yes-the MRF6S23100HR3 is RoHS compliant and supplied in tape-and-reel format with the R3 suffix indicating 250 units per 56 mm, 13-inch reel, as documented in the Features section and Table 5 notes. All passive components listed in the test circuit (e.g., ATC, Kemet, Murata parts) are also RoHS-compliant, supporting full-system environmental compliance for infrastructure equipment certified to EU directives.

How does the MRF6S23100HR3 perform under 2-carrier W-CDMA modulation at 2390 MHz?

Under standard 2-carrier W-CDMA test conditions (V_DD = 28 V, I_DQ = 1000 mA, P_out = 20 W avg., f = 2390 MHz, 3.84 MHz channel bandwidth, PAR = 8.5 dB), the MRF6S23100HR3 delivers 15.4 dB power gain, 23.5% drain efficiency, −37 dBc IM3 at ±10 MHz offset, and −40.5 dBc ACPR at ±5 MHz offset-values confirmed in Table 4 and Figure 3 of the Freescale datasheet. These metrics meet 3GPP spectral emission requirements for BTS Class A/B amplifiers.