NXP Semiconductors MRF6S23100HR5

Overview

MRF6S23100HR5 from NXP Semiconductors (formerly Freescale) is an N-channel enhancement-mode lateral RF power MOSFET designed for 2300–2400 MHz base station amplifiers. It delivers 20 W average output power at 28 V, achieves 15.4 dB power gain and 23.5% drain efficiency under 2-carrier W-CDMA conditions, and supports Class AB/C operation in WiMAX and multicarrier amplifier systems.

For engineers reviewing the MRF6S23100HR5 datasheet, MRF6S23100HR5 pinout, MRF6S23100HR5 application, or MRF6S23100HR5 equivalent, this page provides verified package mapping, impedance-matched RF performance data, thermal derating guidance, ESD protection class ratings, and validated alternative options for cellular infrastructure PA design.

Technical Context

This device operates as a broadband RF power amplifier stage with internally matched input and output impedances optimized for 2300–2400 MHz. Its lateral LDMOS structure enables stable high-power operation up to 225°C junction temperature and supports 10:1 VSWR tolerance at 100 W CW output.

The MRF6S23100HR5 uses series-equivalent large-signal impedance parameters (e.g., Z_source = 2.06 − j4.69 Ω, Z_load = 12.20 − j6.20 Ω at 2300 MHz) for external matching network design, and integrates ESD protection rated to HBM Class 3A, MM Class A, and CDM Class IV.

Key Specifications

Pinout & Package

Package: NI-780 (Case 465-06, Style 1), hermetically sealed ceramic/metal flange-mount package with integral heat slug. Dimensions: 34.16 mm × 9.91 mm × 4.32 mm (L×W×H); flange thermal resistance R_θJC = 0.53°C/W at 100 W CW.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with MRF6S23100HR5, the MRF6S23100HSR5 offers identical RF performance in a smaller NI-780S package, while the PD57018-E trades internal matching for higher efficiency and broader design freedom-requiring custom matching but enabling tighter ACLR in demanding deployments.

Availability

MRF6S23100HR5 is available at Aetrix Electronics and suitable for WiMAX base stations, CDMA2000 macrocells, and WiBro infrastructure requiring stable component supply, long-lifecycle support, and RoHS-compliant high-reliability RF power devices.

Supply support for MRF6S23100HR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors acquired Freescale's RF Power business in 2015 and maintains full technical support, qualification, and manufacturing continuity for legacy Freescale RF LDMOS products.

The MRF6S23100HR5 belongs to the MRF6S family of high-voltage lateral MOSFETs engineered specifically for 2–2.7 GHz cellular infrastructure PAs, emphasizing ruggedness, linearity, and thermal reliability in uncooled or conduction-cooled macrocell sites.

FAQ

What is the maximum continuous drain-source voltage rating for the MRF6S23100HR5?

The MRF6S23100HR5 has a maximum drain-source voltage (V_DSS) rating of +68 Vdc, with a minimum of −0.5 Vdc. This 68 V rating supports safe operation under transient overvoltage conditions in 28 V base station power supplies and allows margin for future 32 V system upgrades, as confirmed in Table 1 of the official datasheet.

Does the MRF6S23100HR5 require external input/output matching networks?

No, the MRF6S23100HR5 is internally matched for both input and output at 2300–2400 MHz, as stated in Table 4 footnote and the Features section. Its series-equivalent source and load impedances (e.g., Z_source = 2.06 − j4.69 Ω at 2300 MHz) are provided to guide external microstrip tuning if needed-but discrete matching components are not required for basic operation.

What thermal resistance value applies to the MRF6S23100HR5 in continuous-wave operation?

At 100 W CW output with case temperature maintained at 80°C, the MRF6S23100HR5 exhibits a junction-to-case thermal resistance (R_θJC) of 0.53°C/W, per Table 2. This value is measured under standardized conditions and is essential for calculating junction temperature rise in thermally constrained macrocell enclosures.

Is the MRF6S23100HR5 qualified for use in multistage amplifier designs with high VSWR exposure?

Yes, the MRF6S23100HR5 is explicitly characterized to handle 10:1 VSWR at 28 Vdc, 2390 MHz, and 100 W CW output power. This ruggedness is documented in the "Features" section and validated per industry-standard load-pull testing, making it suitable for final-stage PAs in antenna systems prone to mismatch during maintenance or environmental shifts.

How does the MRF6S23100HR5 perform under two-carrier W-CDMA modulation?

Under 2-carrier W-CDMA conditions (2390 MHz, 3.84 MHz channel bandwidth, 8.5 dB PAR), the MRF6S23100HR5 delivers 20 W average output power with 15.4 dB power gain, 23.5% drain efficiency, −37 dBc IM3 at 10 MHz offset, and −40.5 dBc ACPR at 5 MHz offset-values confirmed in the "Typical 2-Carrier W-CDMA Performance" section of the datasheet.