NXP Semiconductors MRF6S23100HSR3

Overview

MRF6S23100HSR3 from NXP Semiconductors (formerly Freescale) is a laterally diffused N-channel RF power MOSFET designed for high-efficiency 2300–2400 MHz base station amplifiers. It delivers 20 W average output power at 28 Vdc, achieves 15.4 dB power gain and 23.5% drain efficiency under 2-carrier W-CDMA conditions, and supports Class AB/C operation in WiMAX and multicarrier wireless infrastructure.

For engineers reviewing the MRF6S23100HSR3 datasheet, MRF6S23100HSR3 pinout, MRF6S23100HSR3 application, or MRF6S23100HSR3 equivalent, this page provides verified package mapping (NI-780S), validated 3-pin terminal roles, confirmed thermal resistance (0.59 °C/W at 20 W), ESD protection class (HBM 3A), and real-world W-CDMA linearity metrics (ACPR = –40.5 dBc, IM3 = –37 dBc).

Technical Context

This device operates as a single-ended, internally matched RF power amplifier stage optimized for 2300–2400 MHz band applications. Its lateral MOSFET architecture enables wide instantaneous bandwidth and reduced memory effects, with series-equivalent large-signal impedance parameters characterized across frequency (e.g., Z_source = 2.06 – j4.69 Ω at 2300 MHz, Z_load = 12.20 – j6.20 Ω).

It is rated for continuous operation up to 225°C junction temperature and qualified for 32 V_DD maximum supply, supporting robust handling of 10:1 VSWR at 28 Vdc and 2390 MHz. Integrated ESD protection meets JESD22-A114 Class 3A (HBM), JESD22-A115 Class A (MM), and JESD22-C101 Class IV (CDM).

Key Specifications

Pinout & Package

Package: NI-780S (Case 465A-06, Style 1), flanged ceramic/metal hermetic package with solderable base for high-power RF thermal dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRF6S23100HSR3, MRF6S23100HR3 offers superior thermal handling for high-duty-cycle CW use but requires larger PCB keepout; AFM906S trades output power for smaller form factor and higher gain, making it viable only in lower-power tiers where MRF6S23100HSR3's 20 W capability is over-specified.

Availability

MRF6S23100HSR3 is available at Aetrix Electronics and suitable for CDMA base station PA modules, WiMAX infrastructure transmitters, and multi-carrier amplifier designs requiring stable component supply, RoHS compliance, and proven 2300–2400 MHz linearity.

Supply support for MRF6S23100HSR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors acquired Freescale Semiconductor in 2015 and continues to support its RF power portfolio for wireless infrastructure applications.

The MRF6S23100HSR3 belongs to the MRF6S family of LDMOS RF power transistors, engineered specifically for high-efficiency, high-linearity operation in 2–2.7 GHz cellular and broadband wireless base stations.

FAQ

What is the maximum junction temperature rating for the MRF6S23100HSR3?

The MRF6S23100HSR3 has a maximum operating junction temperature (T_J) of 225°C, as specified in Table 1 of the official datasheet (Rev. 2, Dec. 2008). This rating applies under continuous operation with proper thermal management and is validated for reliability modeling using NXP's MTTF calculator. Exceeding this limit reduces mean time to failure and may cause permanent degradation of the MRF6S23100HSR3.

Does the MRF6S23100HSR3 require external matching networks?

No-the MRF6S23100HSR3 is internally matched for both input and output at 2300–2400 MHz, as confirmed in Table 4 footnote and Figure 15 impedance data. The device presents defined series-equivalent source and load impedances (e.g., Z_source = 2.06 – j4.69 Ω at 2300 MHz), allowing direct integration into 50 Ω systems without discrete matching components. This simplifies layout and improves repeatability of the MRF6S23100HSR3's RF performance.

What is the ESD protection level of the MRF6S23100HSR3?

The MRF6S23100HSR3 features integrated ESD protection rated per industry standards: Human Body Model (HBM) Class 3A (≥8 kV), Machine Model (MM) Class A, and Charge Device Model (CDM) Class IV. These values are documented in Table 3 of the datasheet and reflect tested minimum thresholds-not typical or guaranteed values. This protection level allows safe handling during board assembly and field service without requiring supplemental TVS devices for the MRF6S23100HSR3.

Can the MRF6S23100HSR3 operate at 32 V_DD continuously?

Yes-the MRF6S23100HSR3 is qualified for continuous operation up to 32 V_DD, as stated in the Features section and validated in maximum ratings (V_DSS = +68 Vdc). However, standard test conditions and published RF performance (e.g., 20 W avg., 15.4 dB gain, 23.5% efficiency) are specified at 28 Vdc. Operating the MRF6S23100HSR3 at 32 Vdc requires recalculating bias points, verifying thermal limits, and recharacterizing linearity-especially ACPR and IM3-under actual application conditions.

How does the MRF6S23100HSR3 differ from the MRF6S23100HR3?

The MRF6S23100HSR3 and MRF6S23100HR3 share identical electrical specifications and RF performance but differ in package: MRF6S23100HSR3 uses NI-780S (Case 465A-06), while MRF6S23100HR3 uses NI-780 (Case 465-06). The NI-780S has a smaller flange (0.805–0.815″ vs. 1.335–1.345″) and higher thermal resistance (0.59 °C/W at 20 W vs. 0.53 °C/W at 100 W). Thus, the MRF6S23100HSR3 is optimized for compact 20 W avg. applications, whereas the MRF6S23100HR3 targets higher-power CW use cases.