NXP Semiconductors MRF6S23100HSR5

Overview

MRF6S23100HSR5 from NXP Semiconductors (formerly Freescale) is a laterally diffused N-channel enhancement-mode RF power MOSFET designed for high-efficiency, high-linearity 2300–2400 MHz base station amplifiers. It delivers 20 W average output power at 28 Vdc with 15.4 dB power gain and 23.5% drain efficiency under 2-carrier W-CDMA conditions (2390 MHz, 3.84 MHz channel bandwidth, PAR = 8.5 dB). Its primary circuit role is as the final-stage RF power amplifier in CDMA/WiMAX/WiBro infrastructure transmitters.

For engineers reviewing the MRF6S23100HSR5 datasheet, MRF6S23100HSR5 pinout, MRF6S23100HSR5 application, or MRF6S23100HSR5 equivalent, this page provides verified specifications, thermal performance data, impedance matching parameters, ESD protection class ratings, and real-world W-CDMA distortion metrics - all critical for PA stage design validation and reliability assurance in multi-carrier wireless infrastructure.

Technical Context

This device operates in Class AB or Class C configurations and is internally matched for 50 Ω input/output systems across 2300–2400 MHz. Its lateral MOSFET architecture enables wide instantaneous bandwidth and reduced memory effects, supporting multicarrier signals with up to 10:1 VSWR tolerance at 100 W CW output.

It features integrated ESD protection rated to Human Body Model Class 3A, Machine Model Class A, and Charge Device Model Class IV. Thermal resistance is specified at 0.59 °C/W (junction-to-case, 20 W CW, TC = 75°C), enabling robust thermal management in compact macrocell and small-cell PA modules.

Key Specifications

Pinout & Package

Package: NI-780S (Case 465A-06, Style 1), hermetically sealed ceramic/metal flange-mount package with copper-tungsten base for low thermal resistance and high RF stability.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with MRF6S23100HSR5, AFM905S trades efficiency for gain and suits driver roles, while MRF6P23100HR5 offers superior thermal performance in a larger package for higher-power macrocell use - both share identical frequency coverage and W-CDMA linearity specs but differ in thermal design flexibility and gain-efficiency balance.

Availability

MRF6S23100HSR5 is available at Aetrix Electronics and suitable for CDMA base station transmitters, WiMAX infrastructure amplifiers, and small-cell LTE Band 40 power stages requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for MRF6S23100HSR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors acquired Freescale's RF Power business in 2015 and continues to manufacture, qualify, and support legacy RF LDMOS products including the MRF6S series for wireless infrastructure.

The MRF6S family targets high-efficiency, high-linearity RF power amplification in 2–2.7 GHz cellular infrastructure, emphasizing thermal robustness, internal impedance matching, and multicarrier W-CDMA performance.

FAQ

What is the maximum continuous drain current rating for the MRF6S23100HSR5?

The MRF6S23100HSR5 does not specify a maximum continuous drain current in its datasheet. Instead, it defines absolute maximum ratings via voltage and thermal limits: VDSS = +68 Vdc, TJ(max) = 225°C, and RθJC = 0.59 °C/W. Actual safe operating current depends on bias point, thermal design, and output power level - for example, IDQ = 1000 mA is used in the 20 W W-CDMA test condition. The MRF6S23100HSR5 must be operated within its safe operating area (SOA) defined by these boundaries.

Does the MRF6S23100HSR5 require external matching networks for 2300–2400 MHz operation?

No, the MRF6S23100HSR5 is internally matched for 50 Ω systems across 2300–2400 MHz. Its datasheet provides series-equivalent source and load impedances (e.g., Zsource = 2.06 − j4.69 Ω, Zload = 12.20 − j6.20 Ω at 2300 MHz), confirming that no external broadband matching is needed for nominal operation. However, narrowband optimization or harmonic filtering may still require supplemental components depending on system-level requirements.

What is the gate threshold voltage range of the MRF6S23100HSR5?

The MRF6S23100HSR5 has a gate threshold voltage (VGS(th)) range of 1.0–3.0 Vdc, measured at VDS = 10 Vdc and ID = 250 μAdc. This parameter defines the minimum gate voltage required to initiate conduction. In practical operation, the device is biased at VGS(Q) = 2.0–4.0 Vdc under typical 28 Vdc, 1000 mA quiescent conditions - a value well above threshold to ensure stable Class AB operation and avoid cutoff distortion.

Can the MRF6S23100HSR5 be used in Class C mode for WLL applications?

Yes, the MRF6S23100HSR5 is explicitly qualified for Class C operation in Wireless Local Loop (WLL) applications per its Freescale datasheet. Its lateral MOSFET structure supports efficient switching-mode operation while retaining sufficient linearity for constant-envelope WLL signals. Designers must ensure proper harmonic termination and gate drive timing to maintain stability and avoid oscillation in Class C configuration.

What is the RoHS status and packaging format of the MRF6S23100HSR5?

The MRF6S23100HSR5 is RoHS compliant and supplied in tape-and-reel format. The "SR5" suffix indicates packaging in a 56 mm, 13-inch reel containing 250 units - consistent with industry-standard handling for surface-mount RF power transistors. The NI-780S package uses lead-free terminations and complies with EU Directive 2011/65/EU and related amendments.