NXP Semiconductors MRF6S23140HR3

Overview

MRF6S23140HR3 from Freescale Semiconductor is an N-channel enhancement-mode lateral RF power MOSFET designed for 2300–2400 MHz base station amplifiers. It delivers 28 W average output power at 28 Vdc, 1300 mA quiescent drain current, with 15.2 dB power gain and 25% drain efficiency in 2-carrier W-CDMA operation. It is internally matched and qualified for Class AB/C wireless local loop (WLL) applications.

For engineers reviewing the MRF6S23140HR3 datasheet, MRF6S23140HR3 pinout, MRF6S23140HR3 application, or MRF6S23140HR3 equivalent, this device requires attention to its 225°C max junction temperature, NI-880S package thermal resistance (0.33°C/W at 28 W), series-equivalent impedance data, and ESD protection class ratings-critical for high-reliability RF PA design and thermal management.

Technical Context

This LDMOS transistor operates in Class AB or Class C configurations with gate threshold voltage of 1–3 Vdc and gate quiescent voltage of 2–4 Vdc at 28 Vdd and 1300 mA IDQ. Its internal matching simplifies external network design while maintaining broadband performance across 2300–2400 MHz.

It features integrated ESD protection rated to HBM Class 2, MM Class A, and CDM Class IV, and supports stable operation under 10:1 VSWR at 32 Vdc and 2390 MHz. The device uses series-equivalent large-signal impedance parameters for accurate load-pull modeling and broadband amplifier synthesis.

Key Specifications

Pinout & Package

Package: NI-880S (Case 465C-02, Style 1), flanged ceramic/metal hermetic package with solderable baseplate for direct thermal mounting. Dimensions: 22.99–23.24 mm (A) × 13.60–13.80 mm (B) × 3.73–5.08 mm (C).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power MOSFET applications.

Compared with MRF6S23140HR3, MRFE6S9060NR1 offers higher output and better thermal performance but demands redesign of input matching, while QPD1025 provides superior gain and efficiency using GaN technology but introduces gate protection and layout complexity not present in the mature LDMOS solution.

Availability

MRF6S23140HR3 is available at Aetrix Electronics and suitable for CDMA base station transmitters, WiMAX infrastructure amplifiers, multi-carrier repeaters, and wireless local loop (WLL) systems requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.

Supply support for MRF6S23140HR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Freescale Semiconductor (now part of NXP Semiconductors) is a global leader in RF power solutions, specializing in high-reliability LDMOS transistors for cellular infrastructure.

The MRF6S23140HR3 belongs to Freescale's MRF6S family of laterally diffused MOSFETs engineered specifically for 2–2.7 GHz base station amplifiers demanding high linearity, ruggedness, and thermal stability.

FAQ

What is the maximum continuous drain-source voltage rating for the MRF6S23140HR3?

The MRF6S23140HR3 has a maximum drain-source voltage (VDSS) rating of +68 Vdc, with a minimum of −0.5 Vdc. This allows safe operation up to 32 Vdc supply in Class AB/C configurations while accommodating transient voltage spikes common in RF PA circuits. The rating is validated per Freescale's maximum ratings table and applies across the full operating temperature range.

Does the MRF6S23140HR3 require external input/output matching networks?

No-the MRF6S23140HR3 is internally matched for 50 Ω systems across 2300–2400 MHz, eliminating the need for discrete input/output matching components in standard test fixtures and reference designs. However, fine-tuning may be needed for specific PCB stackups or harmonic suppression requirements, as noted in Freescale's AN1955 and EB212 application notes.

What is the thermal resistance junction-to-case for the MRF6S23140HR3 at 28 W CW operation?

The thermal resistance junction-to-case (RθJC) for the MRF6S23140HR3 is 0.33°C/W when operating at 28 W CW with case temperature held at 75°C. This value is measured per Freescale's AN1955 methodology and directly informs heatsink selection and thermal interface material requirements for reliable long-term operation.

Is the MRF6S23140HR3 RoHS compliant and what does the 'R3' suffix indicate?

Yes, the MRF6S23140HR3 is RoHS compliant. The 'R3' suffix denotes tape-and-reel packaging: 250 units per 56 mm wide, 13-inch diameter reel. This format supports automated pick-and-place assembly and aligns with IPC-7351 land pattern recommendations for the NI-880S package.

How does the MRF6S23140HR3 perform in 2-carrier W-CDMA with 3.84 MHz channel bandwidth?

In 2-carrier W-CDMA operation at 2390 MHz, the MRF6S23140HR3 delivers 28 W avg. output with 15.2 dB power gain, 25% drain efficiency, −40 dBc ACPR at ±5 MHz offset, and −37 dBc IM3 at ±10 MHz offset-all measured in 3.84 MHz channel bandwidth with 8.5 dB PAR at 0.01% CCDF probability, per Freescale's functional test conditions.