NXP Semiconductors MRF6S27015GNR1

Overview

MRF6S27015GNR1 from Freescale Semiconductor is an N-channel enhancement-mode lateral RF power MOSFET designed for 2300–2700 MHz base station amplifier stages. It delivers 3 W average output power at 2600 MHz under W-CDMA conditions (V_DD = 28 V, I_DQ = 160 mA), achieves 14 dB power gain and –45 dBc ACPR at ±5 MHz offset in 3.84 MHz bandwidth, and supports Class AB/C operation in WiMAX and OFDM multicarrier systems.

For engineers reviewing the MRF6S27015GNR1 datasheet, MRF6S27015GNR1 pinout, MRF6S27015GNR1 application, or MRF6S27015GNR1 equivalent, this device is selected for high-efficiency, thermally robust RF final-stage amplification where 225°C junction rating, internal input matching, and 5:1 VSWR ruggedness are critical design requirements.

Technical Context

This LDMOS transistor operates in common-source configuration with characterized series-equivalent large-signal impedances at 2500–2700 MHz. Its gate threshold voltage (1.5–3.5 V) and quiescent gate voltage (typ. 2.8 V) support stable Class AB biasing, while integrated ESD protection (HBM Class 1A) and RoHS-compliant plastic TO-270-2 GULL package enable reliable deployment in outdoor base station environments.

The device is internally input-matched and qualified for continuous operation up to 32 V_DD, with thermal resistance R_θJC = 2.2°C/W at 3 W CW. Its S-parameters (e.g., |S₂₁| = 0.639 @ 2600 MHz) and broadband performance across 2300–2700 MHz confirm suitability for multiband 4G infrastructure applications requiring consistent gain and linearity.

Key Specifications

Pinout & Package

Package: TO-270-2 GULL (Case 1265A-03, Style 1), plastic, RoHS-compliant, 225°C capable, supplied in tape-and-reel (500 units per 24 mm, 13-inch reel).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power MOSFET applications.

Compared with MRF6S27015GNR1, MRFE6S9015N offers higher output power but demands more complex matching, while PD85003 reduces cost at the expense of thermal margin and ESD resilience-making MRF6S27015GNR1 the balanced choice for field-deployed 2.6 GHz base station PAs requiring ruggedness, integration, and proven reliability.

Availability

MRF6S27015GNR1 is available at Aetrix Electronics and suitable for base station transmitter modules, WiMAX infrastructure equipment, OFDM multicarrier amplifiers, and small cell remote radio heads requiring stable component supply across multi-year production cycles.

Supply support for MRF6S27015GNR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Freescale Semiconductor (now part of NXP Semiconductors) is a leader in RF power solutions for wireless infrastructure, specializing in high-voltage LDMOS technology for cellular base stations.

The MRF6S27015GNR1 belongs to Freescale's MRF6S27015 family of 2.6 GHz RF power MOSFETs, engineered specifically for energy-efficient, thermally resilient amplification in CDMA, W-CDMA, and WiMAX base station transmitters.

FAQ

What is the maximum continuous drain current rating for MRF6S27015GNR1?

The MRF6S27015GNR1 does not specify a maximum continuous drain current (I_D) rating directly; instead, its safe operating area is defined by maximum ratings including V_DSS = +68 V, T_J = 225°C, and thermal resistance R_θJC = 2.2°C/W. Under typical 3 W avg. operation at 28 V, I_DQ = 160 mA establishes the quiescent point, and peak current remains within SOA limits per the device's large-signal impedance data.

Does MRF6S27015GNR1 require external input matching components?

No, MRF6S27015GNR1 is internally input-matched, as confirmed by measured S₁₁ ≤ –18 dB across 2300–2700 MHz in a 50 Ω test fixture. The datasheet provides series-equivalent source impedance (e.g., 2.075 – j1.657 Ω @ 2600 MHz) for designing minimal external networks-typically just DC blocking and RF bypass capacitors.

What is the gate threshold voltage range for MRF6S27015GNR1?

The gate threshold voltage (V_GS(th)) for MRF6S27015GNR1 is specified as 1.5–3.5 V (min–max) at V_DS = 10 V and I_D = 40 μA. This range ensures stable turn-on behavior across process variation and supports precise Class AB biasing using the typical V_GS(Q) of 2.8 V at I_DQ = 160 mA and V_DD = 28 V.

Can MRF6S27015GNR1 operate reliably at 32 V drain supply?

Yes, MRF6S27015GNR1 is qualified for continuous operation up to 32 V_DD, as explicitly stated in the Features section. This rating provides design margin for transient overvoltage events on 28 V supply rails, though standard W-CDMA characterization uses V_DD = 28 V to meet efficiency and linearity targets.

What is the moisture sensitivity level (MSL) for MRF6S27015GNR1?

MRF6S27015GNR1 has a Moisture Sensitivity Level (MSL) of 3 per J-STD-020, with a peak reflow temperature rating of 260°C. This allows standard lead-free reflow profiles without preconditioning, provided the device is used within its floor life after dry pack opening.