NXP Semiconductors MRF6S27015NR1

Overview

MRF6S27015NR1 from Freescale Semiconductor is an N-channel enhancement-mode lateral RF power MOSFET designed for 2300–2700 MHz base station amplifiers. It delivers 3 W average output power at 2600 MHz under W-CDMA conditions (28 V, 160 mA IDQ), achieves 14 dB power gain and –45 dBc ACPR at 5 MHz offset, and supports Class AB/C operation in CDMA, WiMAX, and OFDM multicarrier systems.

For engineers reviewing the MRF6S27015NR1 datasheet, MRF6S27015NR1 pinout, MRF6S27015NR1 application, or MRF6S27015NR1 equivalent, this device requires attention to its 28 V DC drain supply, TO-270-2 gull-wing plastic package, 225°C junction rating, internal matching network, and ESD protection class per JESD22-A114.

Technical Context

This RF power transistor operates in common-source configuration with internally matched input and output impedances optimized for 2.6 GHz W-CDMA broadband amplification. Its lateral LDMOS structure enables high linearity (–45 dBc ACPR) and robust 5:1 VSWR tolerance at 28 V and 2600 MHz with 15 W CW capability.

The device features series-equivalent large-signal impedance characterization across 2500–2700 MHz, enabling precise external matching network design. Thermal resistance is specified at 2.2°C/W (junction-to-case, 3 W CW), supporting reliable operation up to 150°C case temperature and 225°C junction temperature.

Key Specifications

Pinout & Package

Package: TO-270-2 Gull Wing (Case 1265A-03, Style 1), plastic, RoHS-compliant, tape-and-reel (500 units per 24 mm, 13-inch reel).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with MRF6S27015NR1, MRF6S27015GNR1 offers identical RF performance but demands PCB layout change for straight-lead mounting, while MRFE6S9015NR1 provides measurable linearity and gain-flatness improvements without altering thermal or bias architecture.

Availability

MRF6S27015NR1 is available at Aetrix Electronics and suitable for CDMA base station transceivers, WiMAX outdoor units, BWA point-to-multipoint hubs, and OFDM multicarrier amplifiers requiring stable component supply across multi-year telecom infrastructure programs.

Supply support for MRF6S27015NR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Freescale Semiconductor (now part of NXP Semiconductors) specialized in high-performance RF power solutions for wireless infrastructure, automotive radar, and industrial heating applications.

The MRF6S27015NR1 belongs to Freescale's MRF6S family of lateral N-channel RF power MOSFETs, engineered specifically for 2–3 GHz cellular base station amplifiers demanding high linearity, ruggedness, and thermal reliability.

FAQ

What is the maximum continuous drain voltage rating for the MRF6S27015NR1?

The MRF6S27015NR1 has a maximum drain-source voltage (VDSS) rating of +68 Vdc, with a minimum of –0.5 Vdc. This 68 V rating supports operation at up to 32 VDD and provides substantial margin against voltage transients in 28 V base station power supplies. The rating is validated per Freescale's maximum ratings table and applies under all operating conditions including VSWR stress.

Does the MRF6S27015NR1 require external input/output matching networks?

Yes, the MRF6S27015NR1 is internally matched but still requires external broadband matching networks. Its series-equivalent source and load impedances (e.g., Zsource = 2.075 – j1.657 Ω at 2600 MHz) are provided to guide design of microstrip or lumped-element networks that transform to 50 Ω. The internal matching reduces component count but does not eliminate the need for external tuning.

What is the thermal resistance junction-to-case for the MRF6S27015NR1 under CW conditions?

The thermal resistance junction-to-case (RθJC) for the MRF6S27015NR1 is 2.2°C/W when operated at 79°C case temperature and 3 W CW output. This value is measured per AN1955 methodology and reflects real-world conduction path performance in the TO-270-2 gull-wing package. It enables accurate junction temperature estimation using TC measurements in production thermal validation.

Is the MRF6S27015NR1 RoHS compliant and what is its moisture sensitivity level?

Yes, the MRF6S27015NR1 is RoHS compliant and rated at Moisture Sensitivity Level 3 per J-STD-020, with a peak reflow temperature of 260°C. This allows standard lead-free PCB assembly without pre-bake, provided floor life (168 hours) is observed after dry pack opening. The RoHS compliance is confirmed in Freescale's documentation and reflected in the R1 suffix designation.

How does the MRF6S27015NR1 perform in W-CDMA single-carrier operation at 2600 MHz?

In single-carrier W-CDMA operation at 2600 MHz, the MRF6S27015NR1 delivers 3 W average output power with 14 dB power gain, 22% drain efficiency, and –45 dBc ACPR at ±5 MHz offset under 3.84 MHz channel bandwidth and 8.5 dB PAR. These values are measured in Freescale's functional test fixture and represent typical performance across production lots.