NXP Semiconductors MRF6S27050HSR3

Overview

MRF6S27050HSR3 from NXP Semiconductors (formerly Freescale) is an N-channel enhancement-mode lateral RF power MOSFET designed for 2500–2700 MHz base station amplifier stages. It delivers 7 W average output power at 28 V, achieves 16 dB power gain and 22.5% drain efficiency under single-carrier W-CDMA conditions (2615 MHz, 3.84 MHz bandwidth), and supports 10:1 VSWR tolerance at 50 W CW - enabling robust operation in CDMA, WiMAX, and OFDM multicarrier Class AB/C transmitters.

For engineers reviewing the MRF6S27050HSR3 datasheet, MRF6S27050HSR3 pinout, MRF6S27050HSR3 application, or MRF6S27050HSR3 equivalent, key selection criteria include its NI-780 package with drain-gate-source terminal mapping, internally matched 25 Ω input/output impedance, 225 °C maximum junction temperature, RoHS-compliant tape-and-reel packaging (250 units per 56 mm, 13-inch reel), and qualification for up to 32 VDD operation.

Technical Context

This device operates as a laterally diffused MOSFET optimized for broadband RF power amplification in the 2.5–2.7 GHz band. Its series-equivalent large-signal impedance parameters (e.g., Z_source = 7.63 + j7.00 Ω, Z_load = 10.63 − j6.96 Ω at 2600 MHz) are fully characterized to simplify matching network design. Internally matched architecture eliminates external input/output tuning components for standard 50 Ω systems.

Thermal performance is defined by R_θJC = 0.98 °C/W at 7 W CW (case temp 72 °C), supporting high-reliability deployment in air-cooled macro base station PA modules. ESD protection meets JESD22-A114 Class 1A (HBM), JESD22-A115 Class A (MM), and JESD22-C101 Class IV (CDM), ensuring robustness during handling and assembly.

Key Specifications

Pinout & Package

Package: NI-780 (Case 465-06, Style 1), hermetically sealed ceramic/metal flange-mount package with integrated heat slug. Dimensions: 20.45–20.70 mm (A) × 9.65–9.91 mm (B) × 4.32–5.33 mm (K), flange thickness 1.45–1.70 mm (H). Designed for direct mounting to heatsink via flange (pin 1 drain electrically connected to flange).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with AFM906S and MRF6P27050HR5, the MRF6S27050HSR3 offers optimal balance of cost, thermal footprint, and proven W-CDMA linearity at 7 W - making it preferred for cost-sensitive small-cell and repeater applications where strict 10 W+ output is unnecessary.

Availability

MRF6S27050HSR3 is available at Aetrix Electronics and suitable for CDMA base station transmitters, WiMAX customer premises equipment, broadband wireless access hubs, and OFDM multicarrier amplifier modules requiring stable component supply and long-term lifecycle support.

Supply support for MRF6S27050HSR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors acquired Freescale Semiconductor in 2015 and continues to manufacture, qualify, and support its RF power portfolio for cellular infrastructure applications.

The MRF6S27050HSR3 belongs to NXP's LDMOS RF power transistor family, engineered specifically for high-efficiency, high-linearity amplification in 2.5–2.7 GHz wireless infrastructure - emphasizing reliability, thermal robustness, and ease of integration in macro and small-cell base stations.

FAQ

What is the maximum continuous drain current rating for the MRF6S27050HSR3?

The MRF6S27050HSR3 does not specify a maximum continuous drain current (I_D) rating directly; instead, its safe operating area is defined by maximum junction temperature (225 °C), thermal resistance (0.98 °C/W at 7 W), and voltage limits. At 28 V and 7 W average output, typical quiescent drain current is 500 mA - but pulsed or peak currents may exceed 2.2 A during RF envelope peaks without violating SOA constraints.

Does the MRF6S27050HSR3 require external input/output matching networks?

No - the MRF6S27050HSR3 is internally matched to 25 Ω on both input and output, as confirmed in Table 4 footnote and Figure 17 impedance data. While external matching is optional for fine-tuning, the device achieves specified gain, efficiency, and ACPR in Freescale's reference test circuit without added discrete components at the transistor terminals.

What is the difference between MRF6S27050HR3 and MRF6S27050HSR3?

The MRF6S27050HR3 uses NI-780S (Case 465A-06) packaging with a larger 33.9–34.2 mm length, while the MRF6S27050HSR3 uses NI-780 (Case 465-06) with 20.45–20.70 mm length. Both share identical electrical specifications, pinout (drain-gate-source), and thermal performance - but differ mechanically and are not interchangeable without PCB layout revision.

Can the MRF6S27050HSR3 operate reliably at 32 VDD as stated in the features?

Yes - the MRF6S27050HSR3 is qualified for continuous operation up to 32 VDD, as explicitly stated in the Features section and supported by maximum ratings (V_DSS = +68 V). However, functional test data (e.g., gain, efficiency, ACPR) is published at 28 V; operation at 32 V requires validation of thermal management and bias stability in the target application.

Is the MRF6S27050HSR3 RoHS compliant and lead-free?

Yes - the MRF6S27050HSR3 is RoHS compliant and lead-free, as confirmed in the Applications section and Table 5 component updates (Rev. 1, Dec. 2008). It ships in tape-and-reel format (R3 suffix = 250 units per 56 mm, 13-inch reel) meeting JEDEC J-STD-020 moisture sensitivity level 3 requirements.