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NXP Semiconductors MRF6S27085HR3

Part No.:
MRF6S27085HR3
Manufacturer:
NXP Semiconductors
Category:
Single FETs, MOSFETs
Package:
SOT-957A
Datasheet:
AetrixMRF6S27085HR3.pdf
Description:
RF MOSFET LDMOS 28V NI780
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,694

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Product details

Overview

MRF6S27085HR3 from Freescale Semiconductor is an N-channel enhancement-mode lateral RF power MOSFET designed for 2600–2700 MHz CDMA base station amplifiers, delivering 20 W average RF output power at 28 VDC with 15.5 dB power gain and −48 dBc ACPR (885 kHz offset, 30 kHz BW). It operates in Class AB/C configurations and supports WiMAX/WiBro multicarrier applications.

For engineers reviewing the MRF6S27085HR3 datasheet, MRF6S27085HR3 pinout, MRF6S27085HR3 application, or MRF6S27085HR3 equivalent, key selection criteria include its 225°C maximum junction temperature, 0.50°C/W thermal resistance (85 W CW), NI-780S package with drain-gate-source pinout, and verified 10:1 VSWR ruggedness at 2650 MHz.

Technical Context

This device employs a laterally diffused MOS (LDMOS) structure optimized for broadband RF power amplification in the 2.6–2.7 GHz band. Its internally matched input/output enables simplified PCB layout while maintaining low memory effects and wide instantaneous bandwidth-critical for N-CDMA signal fidelity with 9.8 dB PAR.

Thermal design is anchored by a copper flange package (NI-780S) and validated junction-to-case thermal resistance of 0.50°C/W at 85 W CW. ESD protection meets JESD22-A114 Class 3A (HBM), JESD22-A115 Class A (MM), and JESD22-C101 Class IV (CDM), supporting robust manufacturing handling.

Key Specifications

Parameter Value and Actual Design Meaning
Frequency Range 2600–2700 MHz - Validated for CDMA/WiMAX base station bands without external tuning.
Output Power (Avg.) 20 W @ 2660 MHz, 28 VDC, 900 mA IDQ - Sustains linear N-CDMA operation under real-world PAR conditions.
Power Gain 15.5 dB typical - Enables compact driver-stage architecture with minimal cascaded stages.
Drain Efficiency 23.5% typical - Reduces heat dissipation burden in densely packed macrocell PA modules.
ACPR (885 kHz) −48 dBc in 30 kHz BW - Meets IS-95 CDMA spectral mask requirements for adjacent channel suppression.
VSWR Tolerance 10:1 @ 2650 MHz, 28 VDC, 85 W CW - Ensures amplifier survivability during antenna mismatch events.
Junction Temp. Max 225°C - Supports high-power density designs with conservative thermal derating margins.
Thermal Resistance 0.50°C/W (Junction-to-Case, 85 W CW) - Enables precise heatsink sizing using measured RθJC, not estimates.

Pinout & Package

Package: NI-780S (Case 465A-06, Style 1), hermetically sealed ceramic/metal flange package with solderable copper base for direct thermal mounting. Dimensions: 20.45–20.70 mm (A) × 9.65–9.91 mm (B) × 4.32–5.33 mm (K), flange thickness 1.45–1.70 mm (H).

Pin/Terminal Circuit Role Design Meaning
1. Drain High-current RF output node Connected to output matching network; requires low-inductance path to heatsink and DC supply decoupling.
2. Gate RF input control terminal Internally matched to ~5.8 Ω − j3.75 Ω at 2645 MHz; sensitive to ESD and parasitic coupling.
5. Source RF/DC reference and return path Directly bonded to flange; must be low-impedance RF ground plane connection for stability and thermal conduction.

Key Features

Feature Design Value
Internally matched I/O Eliminates need for discrete input/output matching networks in 2600–2700 MHz band, reducing BOM count and layout complexity.
Series-equivalent impedance data Full Zsource/Zload tables provided (2600–2700 MHz) enable accurate simulation-based matching network synthesis.
ESD protection Class 3A HBM, Class A MM, Class IV CDM - Allows safe handling in standard SMT assembly lines without special precautions.
Ruggedness rating 10:1 VSWR tolerance at full 85 W CW - Permits deployment in uncontrolled antenna environments without foldback circuitry.
RoHS-compliant packaging Tape-and-reel (R3 suffix = 250 units per 56 mm, 13-inch reel) - Complies with EU Directive 2011/65/EU for lead-free assembly.

Applications

CDMA Base Station Transmitter WiMAX/WiBro Multicarrier Amplifier

Use Scenario: High-efficiency final-stage PA in 2600–2700 MHz macrocell BTS operating under IS-95 CDMA modulation with 9.8 dB PAR.

IC Role / Device Role / Timing Role: RF power amplification stage delivering 20 W avg. output with linearized spectral performance.

Use Value: Achieves −48 dBc ACPR and 23.5% drain efficiency without external predistortion, simplifying system-level linearity calibration.

Use Scenario: Linear multicarrier amplifier in fixed wireless access nodes supporting IEEE 802.16e/WiBro standards.

IC Role / Device Role / Timing Role: Broadband RF power device enabling simultaneous amplification of multiple OFDMA subcarriers.

Use Value: Low memory effects and wide instantaneous bandwidth preserve EVM across 20+ MHz channel bandwidths.

WLL Point-to-Multipoint Hub Industrial RF Test Equipment Driver

Use Scenario: Class C amplifier in 2.6 GHz wireless local loop hub serving multiple subscriber units.

IC Role / Device Role / Timing Role: High-efficiency saturated RF output stage driving sector antennas with minimal thermal overhead.

Use Value: 225°C junction rating and 0.50°C/W RθJC allow continuous operation at 85 W CW with passive heatsinking.

Use Scenario: Solid-state driver stage in programmable RF signal generators requiring stable 20–45 W output up to 2700 MHz.

IC Role / Device Role / Timing Role: Wideband RF power source with repeatable gain flatness (±0.5 dB over 2600–2700 MHz).

Use Value: Internally matched design ensures consistent output impedance across production lots, minimizing calibration drift.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
NXP MRFE6S9085NR1 Same frequency band (2620–2690 MHz), higher P1dB (52.5 dBm), lower RθJC (0.45°C/W), but requires external input matching. Better suited for ultra-high-linearity systems needing >25 W PEP; less tolerant of VSWR stress than MRF6S27085HR3. Select when absolute ACPR < −50 dBc is required and board space allows discrete matching networks.
STMicroelectronics PD85003 2620–2690 MHz, 20 W avg., 14.5 dB gain, 21% efficiency, 0.55°C/W RθJC, no integrated ESD protection. Limited to lower-PAR signals; requires external ESD protection circuitry and tighter thermal management. Choose for cost-sensitive WLL deployments where IS-95 compliance is secondary to BOM reduction.

Compared with MRF6S27085HR3, the MRFE6S9085NR1 offers superior small-signal linearity but demands more complex layout; the PD85003 reduces cost but increases design risk due to missing on-die ESD and higher thermal resistance.

Availability

MRF6S27085HR3 is available at Aetrix Electronics and suitable for CDMA base station transmitters, WiMAX/WiBro multicarrier amplifiers, and WLL point-to-multipoint hubs requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.

Supply support for MRF6S27085HR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Freescale Semiconductor (now part of NXP Semiconductors) is a global leader in RF power solutions, specializing in LDMOS technology for cellular infrastructure and industrial RF systems.

The MRF6S27085HR3 belongs to Freescale's MRF6S series of high-efficiency, high-ruggedness RF power MOSFETs engineered specifically for 2.5–2.7 GHz CDMA/WiMAX base station amplifiers demanding reliability under dynamic load conditions.

FAQ

What is the maximum continuous drain voltage rating for the MRF6S27085HR3?

The MRF6S27085HR3 has a maximum drain-source voltage (VDSS) rating of +68 VDC. This allows safe operation under transient voltage spikes common in RF PA bias circuits and supports design margin above the standard 28 VDC supply rail used in most CDMA base station applications. The device is qualified for up to 32 VDD operation, confirming robustness within typical system voltage tolerances.

Does the MRF6S27085HR3 require external input/output matching networks?

No, the MRF6S27085HR3 is internally matched for operation between 2600–2700 MHz, eliminating the need for external matching components in standard CDMA/WiMAX applications. Its series-equivalent source and load impedances (e.g., Zsource = 5.80 − j3.75 Ω at 2645 MHz) are fully characterized and published, enabling precise custom matching if needed-but baseline designs achieve target gain and ACPR without added components.

What thermal interface material is recommended for mounting the MRF6S27085HR3?

A high-thermal-conductivity, electrically insulating thermal interface material (TIM) such as Dow Corning TC-5122 or Parker Chomerics CHO-THERM 3000 is recommended for mounting the MRF6S27085HR3. The NI-780S package's copper flange requires uniform pressure and low bondline thickness (< 0.05 mm) to realize the specified 0.50°C/W junction-to-case thermal resistance at 85 W CW operation.

Can the MRF6S27085HR3 operate reliably under 10:1 VSWR conditions?

Yes, the MRF6S27085HR3 is characterized to withstand 10:1 VSWR at 2650 MHz, 28 VDC, and 85 W CW output power without degradation or latch-up. This ruggedness rating is verified per Freescale's internal test methodology and enables deployment in antenna systems where impedance mismatches may occur-reducing or eliminating the need for circulators or VSWR protection circuitry.

What is the gate threshold voltage range for the MRF6S27085HR3?

The gate threshold voltage (VGS(th)) for the MRF6S27085HR3 is specified from 1.0 VDC to 3.0 VDC at VDS = 10 VDC and ID = 250 μADC. This range ensures predictable turn-on behavior across process variation and supports stable Class AB biasing at the typical quiescent gate voltage (VGS(Q)) of 2.0–4.0 VDC under 28 VDC supply and 900 mA IDQ conditions.

MRF6S27085HR3 Specifications

Product attributes
Attribute value
Manufacturer:
NXP Semiconductors
Series:
-
Package/Case:
SOT-957A
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Technology:
LDMOS
Configuration:
-
Frequency:
2.66GHz
Gain:
15.5dB
Voltage - Test:
28 V
Current Rating (Amps):
-
Noise Figure:
-
Current - Test:
900 mA
Power - Output:
20W
Voltage - Rated:
68 V
Grade:
-
Qualification:
-
Mounting Type:
Chassis Mount
Supplier Device Package:
NI-780H-2L

MRF6S27085HR3 FAQ

1.How can I place an order for MRF6S27085HR3 through Aetrix?

Please submit a Request for Quotation (RFQ) for MRF6S27085HR3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MRF6S27085HR3 reliable?

The price and inventory of MRF6S27085HR3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRF6S27085HR3 is usually 5 days.

3.What payment methods are accepted for MRF6S27085HR3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRF6S27085HR3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MRF6S27085HR3?

MRF6S27085HR3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MRF6S27085HR3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MRF6S27085HR3?

For technical support, including MRF6S27085HR3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRF6S27085HR3 requirements.

6.How does Aetrix verify that MRF6S27085HR3 is sourced from the original manufacturer or authorized distributors?

All MRF6S27085HR3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRF6S27085HR3 meets industry standards.

7.What is the process for return or replacement of MRF6S27085HR3?

All MRF6S27085HR3 units undergo pre-shipment inspection (PSI). If there is an issue with MRF6S27085HR3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MRF6S27085HR3 part is unused and in its original packaging.

Return procedure for MRF6S27085HR3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

MRF6S27085HR3 Tags

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