NXP Semiconductors MRF6S27085HR5

Overview

MRF6S27085HR5 from NXP Semiconductors (formerly Freescale) is an N-channel enhancement-mode lateral RF power MOSFET designed for 2600–2700 MHz base station amplifiers. It delivers 20 W average output power at 28 V, achieves 15.5 dB power gain and –48 dBc ACPR in 30 kHz bandwidth under N-CDMA conditions, and supports Class AB/C operation in WiMAX and multicarrier WLL systems.

For engineers reviewing the MRF6S27085HR5 datasheet, MRF6S27085HR5 pinout, MRF6S27085HR5 application, or MRF6S27085HR5 equivalent, key selection criteria include its 225°C junction temperature rating, 0.50°C/W thermal resistance at 85 W CW, 10:1 VSWR ruggedness, integrated ESD protection (HBM Class 3A), and NI-780 package with drain-gate-source terminal configuration.

Technical Context

This device operates as a broadband RF power amplifier stage in cellular infrastructure transmitters. Its internally matched input/output enables simplified PCB layout, while series-equivalent large-signal impedance data (e.g., Z_source = 5.80 – j3.75 Ω at 2645 MHz) supports external matching network design for optimized load-pull performance.

The MRF6S27085HR5 uses LDMOS technology with qualified 32 V_DD operation headroom and low memory effects-critical for wide instantaneous bandwidth and linearized multicarrier signal handling. Its gate threshold voltage (1–3 V) and quiescent gate voltage (2–4 V at I_DQ = 900 mA) define stable Class AB biasing across temperature and process variation.

Key Specifications

Pinout & Package

Package: NI-780 (Case 465-06, Style 1), hermetically sealed ceramic/metal flange-mount package with integral heat slug. Dimensions: 33.91 × 9.65 × 4.32 mm (L × W × H), flange-mounted for direct thermal coupling to heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with MRF6S27085HR5, the MRF6P27085HR5 offers higher peak power capability for LTE TDD burst profiles, while the PD57085-E provides a second-source option with near-identical RF performance but slightly reduced thermal efficiency-both require validation of gate bias stability and output matching under system-level modulation.

Availability

MRF6S27085HR5 is available at Aetrix Electronics and suitable for CDMA base station transmitters, WiMAX/WiBro fixed wireless access units, and 2600–2700 MHz LTE Band 7 small-cell boosters requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for MRF6S27085HR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with deep heritage in RF power technologies acquired from Freescale.

The MRF6S27085HR5 belongs to NXP's high-power LDMOS transistor family engineered for cellular infrastructure-designed to deliver rugged, thermally efficient, and spectrally clean amplification in 2.5–2.7 GHz macrocell and small-cell base stations.

FAQ

What is the maximum continuous drain voltage rating for the MRF6S27085HR5?

The MRF6S27085HR5 has a maximum drain-source voltage rating of +68 V_DC, with safe operating area validated up to 32 V_DD for reliable Class AB/C amplifier operation. This 4 V headroom above the nominal 28 V supply ensures robustness against supply transients and ripple-critical in outdoor base station environments where MRF6S27085HR5 is deployed.

Does the MRF6S27085HR5 require external input/output matching networks?

Yes, the MRF6S27085HR5 is internally matched but still requires external broadband matching networks to achieve specified performance. The datasheet provides series-equivalent source and load impedances (e.g., Z_load = 8.40 – j4.43 Ω at 2645 MHz), which guide the design of microstrip or lumped-element networks to transform 50 Ω system impedance-essential for repeatable MRF6S27085HR5 gain, efficiency, and linearity.

What thermal interface material is recommended for mounting the MRF6S27085HR5?

A high-thermal-conductivity, electrically insulating thermal interface material (TIM) such as Bergquist Sil-Pad 400 or Parker Chomerics T-flex 400 is recommended for MRF6S27085HR5 mounting. These materials provide ≤0.2°C·in²/W interface resistance and withstand 150°C case temperatures-ensuring the MRF6S27085HR5's 0.50°C/W R_θJC is preserved and junction temperature remains below 225°C under full 85 W CW load.

Can the MRF6S27085HR5 operate in Class C mode for WLL applications?

Yes, the MRF6S27085HR5 is explicitly characterized for Class C operation in wireless local loop (WLL) applications per its Freescale datasheet. At V_DD = 28 V and I_DQ = 440 mA, it delivers high efficiency (>30%) with acceptable harmonic content-making MRF6S27085HR5 suitable for constant-envelope modulation schemes like FM or narrowband TDMA used in legacy WLL systems.

Is the MRF6S27085HR5 RoHS compliant and lead-free?

Yes, the MRF6S27085HR5 is RoHS compliant and manufactured with lead-free terminations and packaging. The "R5" suffix denotes tape-and-reel packaging (500 units per 56 mm, 13-inch reel) meeting EU Directive 2011/65/EU. All internal metallization, die attach, and flange plating are lead-free-ensuring full compliance for MRF6S27085HR5 in global telecommunications equipment.