NXP Semiconductors MRF6S9060NBR1

Overview

MRF6S9060NBR1 from Freescale Semiconductor is an N-channel enhancement-mode lateral MOSFET RF power transistor designed for broadband base station amplifiers operating up to 1000 MHz. It delivers 14 W average output power at 880 MHz under N-CDMA conditions (28 V, 450 mA quiescent drain current), achieves 21.4 dB power gain and 32.1% drain efficiency, and supports GSM EDGE (21 W avg., 20 dB gain, 46% efficiency) and GSM (60 W CW, 63% efficiency) applications in 921–960 MHz band.

For engineers reviewing the MRF6S9060NBR1 datasheet, MRF6S9060NBR1 pinout, MRF6S9060NBR1 application, or MRF6S9060NBR1 equivalent, this page provides verified technical context, package mapping, validated performance parameters at 880/940 MHz, thermal resistance (0.77 °C/W at 60 W CW), ESD protection class (HBM 1A), and RoHS-compliant TO-270-2 plastic package details - all specific to the discontinued MRF6S9060NBR1 variant.

Technical Context

This device operates as a common-source RF power amplifier stage with characterized series-equivalent large-signal impedance (e.g., Z_source = 2.18 + j0.33 Ω, Z_load = 0.45 + j0.50 Ω at 880 MHz). Its lateral LDMOS structure enables stable operation into 10:1 VSWR at 28 Vdc and 60 W CW output, supported by integrated ESD protection meeting JESD22-A114 Class 1A, JESD22-A115 Class A, and JESD22-C101 Class IV standards.

Thermal design is defined by a maximum junction temperature of 225°C and case temperature limit of 150°C, with thermal resistance R_θJC = 0.77 °C/W (60 W CW) and 0.88 °C/W (14 W CW). The device requires external biasing (V_GS(Q) = 2.9 Vdc typical) and matching networks optimized per Freescale's test fixture (Z1–Z15 microstrip layout on Taconic RF-35 substrate).

Key Specifications

Pinout & Package

Package: TO-270-2 (Case 1265-09, Style 1), plastic overmolded, RoHS-compliant, 225°C capable, surface/bolt-down mounting. R1 suffix denotes tape-and-reel packaging (500 units per 24 mm, 13-inch reel).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRF6S9060NBR1, MRFE6S9060NR1 offers identical RF performance and pinout with improved lifetime reliability, while MRF6P9060HR5 trades package compatibility for higher voltage and power headroom - making MRFE6S9060NR1 the drop-in upgrade and MRF6P9060HR5 a functional alternative only when revised thermal and mechanical integration is feasible.

Availability

MRF6S9060NBR1 is available at Aetrix Electronics and suitable for legacy base station repair, GSM EDGE transmitter refurbishment, and 900 MHz macrocell amplifier maintenance requiring stable component supply despite end-of-life status.

Supply support for MRF6S9060NBR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Freescale Semiconductor (now part of NXP Semiconductors) is a global leader in RF power solutions, specializing in high-efficiency LDMOS transistors for wireless infrastructure.

The MRF6S9060NBR1 belongs to Freescale's MRF6S family of broadband RF power MOSFETs, engineered specifically for cost-sensitive, high-reliability 28 V base station amplifiers operating in 800–1000 MHz bands.

FAQ

Is MRF6S9060NBR1 still in production?

No, MRF6S9060NBR1 is no longer manufactured per PCN12895. Freescale officially discontinued this part in 2008 and designated MRFE6S9060NR1 as its direct replacement. Aetrix Electronics maintains limited legacy stock for repair and maintenance programs but does not offer new production volumes of MRF6S9060NBR1.

What is the correct package type for MRF6S9060NBR1?

The MRF6S9060NBR1 uses the TO-270-2 plastic package (Case 1265-09, Style 1), distinct from the TO-272-2 variant used by MRF6S9060NR1. This package features a bolt-down metal tab, RoHS-compliant terminations (N-suffix), and is rated for 225°C junction temperature - confirmed in Rev. 4 (Aug. 2008) datasheet Figure 1 and Package Dimensions section.

Can MRF6S9060NBR1 replace MRF6S9060NR1 in existing designs?

Yes, MRF6S9060NBR1 is functionally and mechanically interchangeable with MRF6S9060NR1 - both share identical electrical specifications, TO-270-2 package outline, and pinout. However, MRF6S9060NR1 was the earlier version; MRF6S9060NBR1 introduced RoHS compliance and minor process refinements without altering performance or footprint.

What thermal interface method is recommended for MRF6S9060NBR1?

Freescale recommends bolt-down mounting with thermally conductive grease (per AN3263) or solder reflow attach (per AN1907) for the MRF6S9060NBR1 TO-270-2 package. The metal tab serves as both drain and thermal path; achieving <0.77 °C/W total thermal resistance requires a heatsink with surface flatness ≤ 0.002″ and mounting torque of 10–15 in-lb.

Does MRF6S9060NBR1 support GSM, GSM EDGE, and N-CDMA simultaneously?

No - MRF6S9060NBR1 is optimized per application: 60 W CW at 63% efficiency for GSM, 21 W avg. at 46% efficiency for GSM EDGE, and 14 W avg. at 32.1% efficiency for N-CDMA. Each mode requires dedicated bias point (IDQ), matching network, and thermal derating; simultaneous multi-standard operation is not characterized or guaranteed for MRF6S9060NBR1.