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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs

NXP Semiconductors MRF6S9060NR1

Name: MRF6S9060NR1
Brand: NXP Semiconductors
SKU: MRF6S9060NR1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: MRF6S9060NR1

Manufacturer:: NXP Semiconductors

Category:: Single FETs, MOSFETs

Package:: TO-270AA

Datasheet:: MRF6S9060NR1.pdf

Description:: RF MOSFET LDMOS 28V TO270-2

Quantity:: RFQ Add To RFQ list

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Product details

Overview

MRF6S9060NR1 from Freescale Semiconductor is an N-channel enhancement-mode lateral MOSFET RF power transistor designed for broadband common-source amplifier applications in 28 V base station equipment, operating up to 1000 MHz. It delivers 14 W average output power at 880 MHz under N-CDMA conditions, achieves 21.4 dB power gain and 32.1% drain efficiency, and supports GSM EDGE with 21 W avg. output and 1.5% rms EVM.

For engineers reviewing the MRF6S9060NR1 datasheet, MRF6S9060NR1 pinout, MRF6S9060NR1 application, or MRF6S9060NR1 equivalent, key selection considerations include its TO-270-2/TO-272-2 plastic package, 225°C junction rating, integrated ESD protection (HBM Class 1A), 10:1 VSWR ruggedness at 60 W CW, and verified performance in 921–960 MHz GSM and 880 MHz N-CDMA base station amplifiers.

Technical Context

This device operates as a high-gain, broadband RF power amplifier stage in large-signal common-source configuration. Its lateral LDMOS structure enables stable operation at 28 V DC supply with quiescent drain current of 450 mA (N-CDMA) or 500 mA (GSM/EDGE), and it is characterized using series-equivalent large-signal impedance parameters for matching network design.

The MRF6S9060NR1 features integrated ESD protection per JESD22-A114 (HBM Class 1A), JESD22-A115 (Machine Model Class A), and JESD22-C101 (CDM Class IV). Its thermal resistance is 0.77 °C/W (60 W CW) and 0.88 °C/W (14 W CW), supporting reliable operation at case temperatures up to 150°C and junction temperatures up to 225°C.

Key Specifications

Parameter	Value and Actual Design Meaning
Operating Frequency	Up to 1000 MHz - supports full-band 921–960 MHz GSM/EDGE and 880 MHz N-CDMA base station applications.
Output Power (N-CDMA)	14 W avg. @ 880 MHz - sufficient for single-carrier IS-95 CDMA pilot/sync/paging/traffic code amplification.
Output Power (GSM)	60 W CW @ 921–960 MHz - enables high-efficiency final-stage amplification in 2G infrastructure.
Power Gain	21.4 dB @ 880 MHz N-CDMA - reduces driver stage complexity and improves system-level gain margin.
Drain Efficiency	63% @ 60 W CW GSM - lowers thermal load and power supply requirements in continuous-wave base station PA stages.
VSWR Tolerance	10:1 @ 28 V, 880 MHz, 60 W CW - ensures survivability during antenna mismatch events without external protection circuitry.
Junction Temperature	225°C max - allows high-power density mounting with conservative heatsinking in compact macrocell designs.

Pinout & Package

Package: TO-270-2 (Case 1265-09, Style 1) and TO-272-2 (Case 1337-04, Style 1), both plastic overmolded packages with bolt-down surface-mount capability and RoHS-compliant lead-free terminations (N suffix).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	High-current RF output node	Electrically connected to metal tab; requires low-inductance thermal and RF ground path via bolt-down mounting.
Source	Common reference node	Internally tied to tab; forms return path for drain current and RF signal in common-source topology.
Gate	RF input control terminal	High-impedance control node; requires stable bias network and input matching to 2.28 + j0.23 Ω (850 MHz) per test data.

Key Features

Feature	Design Value
Integrated ESD Protection	HBM Class 1A, Machine Model Class A, CDM Class IV - eliminates need for external ESD clamps in production PCBs.
225°C Junction Rating	Enables high-power operation with simplified thermal management versus 200°C predecessors - validated by MTTF calculator and AN1955 methodology.
10:1 VSWR Ruggedness	Survives worst-case antenna mismatch at full 60 W CW without degradation - critical for unattended macrocell deployments.
Series-Equivalent Impedance Data	Published Z_source and Z_load values (e.g., 2.18 + j0.33 Ω / 0.45 + j0.50 Ω @ 880 MHz) - accelerates matching network synthesis without de-embedding.
RoHS-Compliant Packaging	N-suffix indicates lead-free terminations; MSL Level 3 (260°C peak reflow) - supports modern automated assembly processes.

Applications

Base Station Power Amplifier	GSM EDGE Transmitter
Use Scenario: Final-stage RF power amplification in 28 V macrocell base stations covering 921–960 MHz band. IC Role / Device Role / Timing Role: High-efficiency, high-linearity N-channel LDMOS transistor operating in common-source Class AB mode. Use Value: Delivers 60 W CW output with 63% drain efficiency and handles 10:1 VSWR - reduces cooling requirements and improves field reliability.	Use Scenario: Linear power amplification for EDGE modulation in 921–960 MHz infrastructure transmitters. IC Role / Device Role / Timing Role: Broadband RF power transistor biased at 500 mA quiescent current for optimal EVM and spectral regrowth performance. Use Value: Achieves 1.5% rms EVM and −62 dBc spectral regrowth at 400 kHz offset - meets 3GPP TS 45.005 EDGE linearity requirements.
N-CDMA Base Station Amplifier	Multi-Carrier Cellular Infrastructure
Use Scenario: Single-carrier N-CDMA amplification in IS-95 systems (Pilot, Sync, Paging, Traffic Codes 8–13) at 880 MHz. IC Role / Device Role / Timing Role: Large-signal RF power MOSFET delivering 14 W average output with PAR handling up to 9.8 dB. Use Value: Provides 21.4 dB power gain and −47.6 dBc ACPR @ ±750 kHz - satisfies IS-95 adjacent channel interference limits.	Use Scenario: Reused across multiple frequency bands (850/880/910 MHz) in modular base station designs requiring broadband gain flatness. IC Role / Device Role / Timing Role: Broadband amplifier core with measured gain variation <±0.8 dB from 850–910 MHz in test fixture. Use Value: Eliminates need for band-specific PA modules - reduces BOM count and simplifies inventory for multi-band OEMs.

Base Station Power Amplifier

GSM EDGE Transmitter

Use Scenario: Final-stage RF power amplification in 28 V macrocell base stations covering 921–960 MHz band.

IC Role / Device Role / Timing Role: High-efficiency, high-linearity N-channel LDMOS transistor operating in common-source Class AB mode.

Use Value: Delivers 60 W CW output with 63% drain efficiency and handles 10:1 VSWR - reduces cooling requirements and improves field reliability.

Use Scenario: Linear power amplification for EDGE modulation in 921–960 MHz infrastructure transmitters.

IC Role / Device Role / Timing Role: Broadband RF power transistor biased at 500 mA quiescent current for optimal EVM and spectral regrowth performance.

Use Value: Achieves 1.5% rms EVM and −62 dBc spectral regrowth at 400 kHz offset - meets 3GPP TS 45.005 EDGE linearity requirements.

N-CDMA Base Station Amplifier

Multi-Carrier Cellular Infrastructure

Use Scenario: Single-carrier N-CDMA amplification in IS-95 systems (Pilot, Sync, Paging, Traffic Codes 8–13) at 880 MHz.

IC Role / Device Role / Timing Role: Large-signal RF power MOSFET delivering 14 W average output with PAR handling up to 9.8 dB.

Use Value: Provides 21.4 dB power gain and −47.6 dBc ACPR @ ±750 kHz - satisfies IS-95 adjacent channel interference limits.

Use Scenario: Reused across multiple frequency bands (850/880/910 MHz) in modular base station designs requiring broadband gain flatness.

IC Role / Device Role / Timing Role: Broadband amplifier core with measured gain variation <±0.8 dB from 850–910 MHz in test fixture.

Use Value: Eliminates need for band-specific PA modules - reduces BOM count and simplifies inventory for multi-band OEMs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MRFE6S9060NR1	Direct replacement per PCN12895; identical pinout, package, and RF specs; improved thermal robustness and updated qualification.	Same 28 V, 900 MHz base station use cases; qualified for newer manufacturing process with extended lifetime modeling.	Select MRFE6S9060NR1 for new designs requiring long-term supply continuity and enhanced MTTF at high junction temperature.
MRF6P9060GNR1	Higher P1dB (75 W vs. 67 W), higher V_DSS (100 V vs. 68 V), same TO-270-2 package; optimized for 6 GHz radar but usable at 900 MHz.	Better suited for pulsed-RF or high-VSWR transient environments; not characterized for GSM EDGE EVM or N-CDMA ACPR.	Choose MRF6P9060GNR1 only when absolute ruggedness or headroom beyond 60 W CW is required - verify linearity separately.

Compared with MRF6S9060NR1, MRFE6S9060NR1 offers assured long-term availability and identical drop-in compatibility, while MRF6P9060GNR1 trades verified cellular linearity for higher voltage and power headroom - making the former ideal for migration and the latter appropriate only for non-standard, high-stress RF loads.

Availability

MRF6S9060NR1 is available at Aetrix Electronics and suitable for 2G/3G base station power amplifiers, macrocell RF front-ends, and broadband infrastructure transmitters requiring stable component supply across extended production lifecycles.

Supply support for MRF6S9060NR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Freescale Semiconductor (now part of NXP Semiconductors) is a global leader in RF power solutions, specializing in high-reliability semiconductor components for wireless infrastructure, automotive radar, and industrial RF heating.

The MRF6S9060NR1 belongs to Freescale's MRF6S family of broadband LDMOS RF power transistors, engineered specifically for cost-sensitive, high-volume 2G/3G macrocell base station amplifiers operating at 28 V with stringent linearity and ruggedness requirements.

FAQ

What is the maximum junction temperature rating for the MRF6S9060NR1?

The MRF6S9060NR1 has a maximum operating junction temperature of 225°C, as specified in Table 1 of the Freescale technical data sheet (Rev. 4, Aug. 2008). This rating enables high-power-density deployment in thermally constrained macrocell enclosures, though continuous operation at this limit affects mean time to failure (MTTF) - Freescale provides an online MTTF calculator for derating analysis.

Does the MRF6S9060NR1 support GSM EDGE modulation with acceptable EVM?

Yes, the MRF6S9060NR1 delivers 1.5% rms EVM under typical GSM EDGE conditions (VDD = 28 V, IDQ = 500 mA, Pout = 21 W avg., 921–960 MHz), as documented in Table 5 and Figure 10 of the datasheet. This meets 3GPP TS 45.005 requirements for Class A/B EDGE transmitters and confirms suitability for commercial infrastructure deployments.

Is the MRF6S9060NR1 pin-compatible with the MRFE6S9060NR1 replacement?

Yes, the MRFE6S9060NR1 is a direct pin-compatible and functionally equivalent replacement for the MRF6S9060NR1, as confirmed in Freescale's Device Migration notice PCN12895. Both share identical TO-270-2/TO-272-2 packaging, pinout, biasing, and RF performance - enabling seamless PCB reuse without layout changes.

What is the VSWR tolerance specification for the MRF6S9060NR1?

The MRF6S9060NR1 is rated for 10:1 VSWR at 28 V DC, 880 MHz, and 60 W CW output power, as stated in the "Features" section of the Freescale datasheet. This ruggedness specification ensures operational integrity during antenna detuning or feedline faults without requiring external circulators or protection circuits in base station final amplifier stages.

Which package variants are available for the MRF6S9060NR1?

The MRF6S9060NR1 is offered in two RoHS-compliant plastic packages: TO-270-2 (Case 1265-09, Style 1) and TO-272-2 (Case 1337-04, Style 1). Both use the R1 tape-and-reel format (500 units per reel), with the TO-270-2 configured for 24 mm carrier tape and the TO-272-2 for 44 mm - both require bolt-down mechanical mounting per AN3263.

MRF6S9060NR1 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: TO-270AA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Technology:: LDMOS

Configuration:: -

Frequency:: 880MHz

Gain:: 21.4dB

Voltage - Test:: 28 V

Current Rating (Amps):: -

Noise Figure:: -

Current - Test:: 450 mA

Power - Output:: 14W

Voltage - Rated:: 68 V

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-270-2

MRF6S9060NR1 FAQ

1.How can I place an order for MRF6S9060NR1 through Aetrix?

Please submit a Request for Quotation (RFQ) for MRF6S9060NR1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MRF6S9060NR1 reliable?

The price and inventory of MRF6S9060NR1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRF6S9060NR1 is usually 5 days.

3.What payment methods are accepted for MRF6S9060NR1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRF6S9060NR1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MRF6S9060NR1?

MRF6S9060NR1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MRF6S9060NR1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MRF6S9060NR1?

For technical support, including MRF6S9060NR1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRF6S9060NR1 requirements.

6.How does Aetrix verify that MRF6S9060NR1 is sourced from the original manufacturer or authorized distributors?

All MRF6S9060NR1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRF6S9060NR1 meets industry standards.

7.What is the process for return or replacement of MRF6S9060NR1?

All MRF6S9060NR1 units undergo pre-shipment inspection (PSI). If there is an issue with MRF6S9060NR1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MRF6S9060NR1 part is unused and in its original packaging.

Return procedure for MRF6S9060NR1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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