NXP Semiconductors MRF6S9130HR3

Overview

MRF6S9130HR3 from Freescale Semiconductor is an N-channel enhancement-mode lateral RF power MOSFET designed for base station multicarrier amplifier applications in 865–960 MHz bands. It delivers 27 W avg. N-CDMA output at 880 MHz with 19.2 dB power gain, 30.5% drain efficiency, and −48.1 dBc ACPR at 750 kHz offset under 28 Vdc bias and 950 mA quiescent current - deployed in macrocell N-CDMA/GSM/EDGE infrastructure.

For engineers reviewing the MRF6S9130HR3 datasheet, MRF6S9130HR3 pinout, MRF6S9130HR3 application, or MRF6S9130HR3 equivalent, this page provides verified package mapping (NI-780S, CASE 465A-06), thermal resistance (0.45 °C/W at 130 W CW), ESD protection class (HBM 1A), VSWR ruggedness (10:1 @ 28 Vdc, 880 MHz), and validated GSM EDGE spectral regrowth (−63 dBc @ 400 kHz).

Technical Context

This LDMOS transistor operates as a high-efficiency final-stage RF power amplifier in cellular base station transmitters. Its internally matched input enables direct 50 Ω system integration, while series-equivalent large-signal impedance data (e.g., Z_source = 1.52 + j0.11 Ω at 880 MHz) supports external broadband matching network design for optimal load-pull performance across 865–960 MHz.

The device features integrated ESD protection per JESD22-A114 Class 1A, qualified for up to 32 V_DD, and rated for 225 °C junction temperature. Thermal resistance R_θJC is 0.45 °C/W at 130 W CW (case temp 80 °C), enabling stable operation in forced-air or heatsink-cooled macrocell PA modules without derating below full rated power.

Key Specifications

Pinout & Package

Package: NI-780S (CASE 465A-06, STYLE 1), hermetically sealed ceramic/metal flange-mount package with integral heatsink tab. Dimensions: 34.16 mm × 9.91 mm × 4.32 mm (L×W×H), flange thickness 1.70 mm, drain tab electrically connected to case.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with MRF6S9130HR3, MRFE6S9130HR3 offers measurable thermal and bandwidth advantages for future-proofed infrastructure, while MRF6P9300HR5 trades higher voltage tolerance and output for increased thermal mass and cost - neither is pin-compatible, but both share identical flange-mount mechanical interface and gate drive requirements.

Availability

MRF6S9130HR3 is available at Aetrix Electronics and suitable for N-CDMA macrocell transmitters, GSM 900 base station power amplifiers, and GSM EDGE multicarrier amplifier modules requiring stable component supply through extended production lifecycles.

Supply support for MRF6S9130HR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Freescale Semiconductor (now part of NXP Semiconductors) is a global leader in RF power solutions for wireless infrastructure, with deep expertise in LDMOS technology and base station amplifier design.

The MRF6S9130HR3 belongs to Freescale's MRF6S family of laterally diffused MOSFETs engineered specifically for high-efficiency, high-linearity, and high-ruggedness operation in 800–1000 MHz cellular base station transmitters.

FAQ

What is the maximum continuous drain voltage rating for the MRF6S9130HR3?

The MRF6S9130HR3 has a maximum drain-source voltage rating of +68 Vdc, with a minimum of −0.5 Vdc. This rating supports operation up to 32 V_DD with margin for transient overvoltage events common in base station PA stages. The absolute maximum V_DS must not be exceeded during any operational condition, including startup, shutdown, or VSWR fault scenarios. MRF6S9130HR3 is not rated for avalanche operation.

Does the MRF6S9130HR3 require external input matching components?

No - the MRF6S9130HR3 is internally matched for 50 Ω system integration at its input. Its series-equivalent source impedance is characterized (e.g., 1.52 + j0.11 Ω at 880 MHz), allowing designers to implement optimized broadband output matching networks while omitting input matching elements. External DC blocking and bias feed remain necessary, as shown in the official test circuit schematic.

What is the thermal resistance junction-to-case for the MRF6S9130HR3 at 130 W CW output?

The thermal resistance junction-to-case (R_θJC) for the MRF6S9130HR3 is 0.45 °C/W when operated at 130 W CW with case temperature maintained at 80 °C. This value is measured under controlled test conditions using the Freescale-defined test fixture and must be applied with appropriate derating if case temperature exceeds 80 °C or airflow is restricted. MRF6S9130HR3 achieves this performance in the NI-780S package with flange-mounted heatsinking.

Is the MRF6S9130HR3 RoHS compliant and lead-free?

Yes - the MRF6S9130HR3 is RoHS compliant and features lead-free NiPdAu plating on all external terminals and the metal flange. It meets JEDEC J-STD-020 moisture sensitivity level (MSL) 3 and is qualified for Pb-free reflow soldering profiles with peak temperatures up to 260 °C. The "R3" suffix denotes tape-and-reel packaging (250 units per 56 mm, 13-inch reel) with RoHS-compliant carrier tape.

What is the typical error vector magnitude (EVM) performance of the MRF6S9130HR3 in GSM EDGE applications?

The MRF6S9130HR3 delivers 1.5% rms EVM at 56 W avg. output power across the 921–960 MHz band under GSM EDGE modulation conditions (8-PSK, 3/4 coding). This performance was measured in the Freescale GSM EDGE test fixture with 28 Vdc supply and 950 mA quiescent current. EVM remains stable across temperature and aging, supporting long-term deployment in uncooled outdoor base station enclosures. MRF6S9130HR3 meets 3GPP TS 45.005 Class A requirements without DPD.