NXP Semiconductors MRF6V10250HSR3

Overview

MRF6V10250HSR3 from Freescale Semiconductor is an N-channel enhancement-mode lateral RF power MOSFET designed for pulsed radar transmitter stages operating at 1030–1090 MHz. It delivers 250 W peak (25 W avg.) output power with 21 dB power gain and 60% drain efficiency at V_DD = 50 V, 100 μs pulse width, and 10% duty cycle. Its 10:1 VSWR ruggedness supports high-reliability airborne radar applications.

For engineers reviewing the MRF6V10250HSR3 datasheet, MRF6V10250HSR3 pinout, MRF6V10250HSR3 application, or MRF6V10250HSR3 equivalent, key selection criteria include pulsed RF power capability at L-band, thermal resistance of 0.10 °C/W (junction-to-case), gate-source voltage range of –6.0 to +10 V, and internal matching for 50 Ω systems.

Technical Context

This device operates as a single-ended, Class C–optimized RF power amplifier stage in pulsed radar transmitters. Its lateral MOSFET structure enables high peak current handling (250 W peak) while maintaining stable gain across 1030–1090 MHz under 10% duty cycle conditions.

The MRF6V10250HSR3 features series-equivalent large-signal impedance characterization (Z_source = 3.26 – j3.72 Ω, Z_load = 5.85 – j2.39 Ω at 1090 MHz), integrated ESD protection (HBM Class 2), and a maximum junction temperature rating of 225°C - enabling operation in thermally constrained airborne radar enclosures.

Key Specifications

Pinout & Package

Package: NI-780S (Case 465A-06, Style 1), ceramic/metal flanged package with integral heatsink base. Designed for bolt-down mounting to temperature-controlled chassis or cold plates.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with MRF6V10250HSR3, the MRF6V2300NBR1 shifts operational bandwidth upward and sacrifices L-band ruggedness, while the MRFE6VP6300HR5 increases frequency agility at the cost of verified 1090 MHz VSWR resilience and thermal performance - making MRF6V10250HSR3 uniquely suited for fielded L-band radar sustainment.

Availability

MRF6V10250HSR3 is available at Aetrix Electronics and suitable for airborne radar, ground-based ATC systems, and maritime surveillance platforms requiring stable component supply amid end-of-life constraints.

Supply support for MRF6V10250HSR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Freescale Semiconductor (now part of NXP Semiconductors) was a leading designer of RF power transistors for defense, aerospace, and industrial radar systems.

The MRF6V10250HSR3 belongs to Freescale's MRF6V series of L-band pulsed RF power MOSFETs, engineered specifically for high-reliability, high-VSWR-tolerance radar transmitter final stages.

FAQ

What is the maximum continuous drain current rating for the MRF6V10250HSR3?

The MRF6V10250HSR3 does not specify a continuous drain current rating because it is designed exclusively for pulsed operation. Its datasheet defines performance under pulsed conditions: 250 W peak output at 100 μs pulse width and 10% duty cycle. The device's safe operating area (SOA) curve in Figure 4 confirms operation up to 10 A at V_DS = 10 V for short durations, but sustained DC operation is not supported. Always refer to the pulsed SOA limits when designing with MRF6V10250HSR3.

Can the MRF6V10250HSR3 be used in continuous-wave (CW) applications?

No, the MRF6V10250HSR3 is explicitly characterized and qualified only for pulsed operation - specifically at 1% to 20% duty cycle within 1030–1090 MHz. Its thermal design (Z_θJC = 0.10 °C/W) and SOA curves assume pulsed dissipation. CW operation would exceed junction temperature limits even at reduced power levels, risking premature failure. Freescale's documentation states "RF Power transistor designed for applications operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty cycle" - confirming MRF6V10250HSR3 is not rated for CW use.

What is the gate threshold voltage range for the MRF6V10250HSR3?

The MRF6V10250HSR3 has a gate threshold voltage (V_GS(th)) range of 1.0 V to 3.0 V, measured at V_DS = 10 Vdc and I_D = 528 μAdc. This wide range reflects process variation across production lots and informs bias network design: gate quiescent voltage (V_GS(Q)) is specified as 2.0–3.0 V under functional test conditions (V_DD = 50 Vdc, I_DQ = 250 mAdc). Proper gate biasing is essential to achieve the specified 250 mA quiescent current and maintain linearity in pulsed radar waveforms.

Does the MRF6V10250HSR3 require external matching components?

The MRF6V10250HSR3 is internally matched for 50 Ω systems at 1030–1090 MHz, eliminating the need for external input/output matching networks in standard configurations. However, its datasheet provides series-equivalent source and load impedances (e.g., Z_load = 5.85 – j2.39 Ω at 1090 MHz) for precision designs. While many radar applications use the device as-is in Freescale's reference test circuit, optimal efficiency and gain may require fine-tuning with minimal external elements - especially when interfacing with non-50 Ω circulators or filters. So MRF6V10250HSR3 simplifies matching but does not eliminate all RF layout considerations.

What is the meaning of the 'R3' suffix in MRF6V10250HSR3?

The 'R3' suffix in MRF6V10250HSR3 indicates tape-and-reel packaging: 250 units per 56 mm carrier tape on a 13-inch reel. This packaging format is optimized for automated SMT placement in high-volume radar subsystem manufacturing. The 'R3' designation is distinct from other variants like 'R1' (100 units) or 'R5' (500 units), and correlates directly to Freescale's ordering nomenclature defined in the datasheet's packaging section. All electrical and thermal specifications remain identical across R-suffix variants - only the packaging differs. When procuring MRF6V10250HSR3, ensure compatibility with your pick-and-place equipment's reel width and diameter requirements.