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NXP Semiconductors MRF6V14300HR3
- Part No.:
- MRF6V14300HR3
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- SOT-957A
- Datasheet:
-
MRF6V14300HR3.pdf
- Description:
- RF MOSFET LDMOS 50V NI780
- Quantity:
- Payment:
- Shipping:
Inventory:2,341
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Product details
Overview
MRF6V14300HR3 from Freescale Semiconductor is a lateral N-channel enhancement-mode RF power MOSFET designed for pulsed radar and industrial heating applications at 1200–1400 MHz. It delivers 330 W peak (39.6 W avg) output power with 18 dB power gain and 60.5% drain efficiency at 50 VDD, 150 mA IDQ, 300 μs pulse width, and 12% duty cycle.
For engineers reviewing the MRF6V14300HR3 datasheet, MRF6V14300HR3 pinout, MRF6V14300HR3 application, or MRF6V14300HR3 equivalent, this page provides verified package mapping, thermal resistance (ZθJC = 0.13 °C/W), ESD protection class (HBM 1C), load mismatch tolerance (5:1 VSWR), and functional test conditions matching Freescale's official test fixture.
Technical Context
This device operates as a high-power RF amplifier stage in pulsed systems, using internally matched input/output impedance (e.g., Zsource = 2.70 – j4.10 Ω at 1200 MHz; Zload = 2.97 – j2.66 Ω at 1200 MHz) to simplify external matching network design. Its lateral LDMOS structure supports stable operation up to 225°C junction temperature and withstands 5:1 VSWR without degradation.
Key operational constraints include gate-source voltage limits of –6.0 to +10 VDC, drain-source voltage range of –0.5 to +100 VDC, and pulsed thermal performance validated at 65°C case temperature with 330 W peak power. The integrated ESD protection meets JESD22-A114 Class 1C (HBM), JESD22-A115 Class A (MM), and JESD22-C101 Class IV (CDM).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDD Max | +100 VDC: Enables high-voltage pulsed operation up to 50 V supply with 50 V headroom for transient margin. |
| POUT Peak | 330 W @ 1400 MHz: Sustains full-rated pulsed output under 300 μs / 12% duty cycle conditions. |
| Gps | 18 dB typical: Delivers consistent small-signal-to-large-signal gain across 1200–1400 MHz band. |
| ηD | 60.5% typical: Minimizes heat generation in high-duty-cycle radar transmitters, reducing heatsink requirements. |
| ZθJC | 0.13 °C/W: Enables direct thermal coupling to heatsink; supports 330 W pulsed dissipation with ≤43°C temperature rise above case. |
| VSWR Tolerance | 5:1 @ 1400 MHz: Maintains output power integrity under severe antenna mismatch-critical for airborne radar front-ends. |
| TJ Max | 225°C: Allows extended operation near thermal limit while maintaining reliability per MTTF model. |
Pinout & Package
Package: NI-780S (Case 465A-06, Style 1), ceramic/metal hermetic flange-mount package with solderable baseplate for low-thermal-resistance mounting. Dimensions: 34.16 mm × 9.91 mm × 4.32 mm (L×W×H), flange thickness 1.70 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1. Drain | High-current RF power output node | Connected directly to flange for thermal conduction and RF grounding; requires low-inductance DC feed and RF choke. |
| 2. Gate | RF input control terminal | High-impedance node requiring series R/C stabilization; sensitive to ESD-must be protected per HBM 1C spec. |
| 3. Source | RF return and bias reference | Internally tied to flange; forms common ground path for gate drive and drain current return-critical for stability. |
Key Features
| Feature | Design Value |
|---|---|
| Internally matched | Eliminates need for external broadband matching networks at 1200–1400 MHz-reduces PCB area and tuning complexity. |
| 5:1 VSWR tolerance | Ensures uninterrupted operation during antenna detuning events in pulsed radar systems without foldback or shutdown. |
| Integrated ESD protection | Meets JESD22-A114 Class 1C (HBM), enabling robust handling in production and field maintenance without added TVS diodes. |
| Extended VGS range | –6.0 V to +10 V enables deep Class C biasing for improved efficiency in pulsed amplifiers with minimal gate drive overhead. |
| RoHS compliant | Lead-free and halogen-free construction meets global environmental compliance for aerospace and defense supply chains. |
Applications
| Weather Radar Transmitter | Industrial RF Heating |
|---|---|
|
Use Scenario: Pulsed 1400 MHz transmitter in S-band weather surveillance radar operating at 300 μs pulse width and 12% duty cycle. IC Role / Device Role / Timing Role: Final-stage RF power amplifier delivering 330 W peak pulses to magnetron or solid-state antenna array. Use Value: 60.5% drain efficiency reduces cooling demand in confined radar cabinets; 5:1 VSWR tolerance prevents fault shutdown during precipitation-induced antenna mismatch. |
Use Scenario: 1300 MHz RF generator for plastic welding and food processing equipment requiring stable pulsed power delivery. IC Role / Device Role / Timing Role: High-efficiency RF power switch driving resonant cavity loads with variable impedance. Use Value: Internally matched design eliminates manual tuning per unit; 225°C junction rating supports continuous operation in sealed industrial enclosures. |
| Military Ground Radar | Avionics Pulse Amplifier |
|
Use Scenario: Mobile tactical radar system operating across 1200–1400 MHz band with rapid frequency agility and pulsed waveform flexibility. IC Role / Device Role / Timing Role: Main RF power stage in transmit/receive module with fast pulse rise/fall time (tr = 50 ns) requirement. Use Value: Gain flatness of ±0.5 dB and harmonic suppression >20 dBc ensure clean spectral output meeting MIL-STD-461 emissions limits. |
Use Scenario: Compact airborne radar altimeter transmitter where size, weight, and thermal management are critical constraints. IC Role / Device Role / Timing Role: High-power density RF amplifier mounted directly to cold plate with minimal thermal interface layers. Use Value: ZθJC = 0.13 °C/W enables 330 W peak dissipation within strict 65°C case temperature limit-no forced air required. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NXP MRFE6VP6300HR5 | Higher POUT (600 W peak), wider bandwidth (1200–1600 MHz), but ZθJC = 0.15 °C/W and no 5:1 VSWR validation at 1400 MHz. | Requires redesigned output matching network and larger heatsink; suitable only when >330 W output is mandatory. | Select only if system demands >330 W peak or broader frequency coverage beyond 1400 MHz. |
| MACOM MRF6V2300NBR1 | Same 330 W peak rating but rated for 2200 MHz max; lower gain (16 dB typ) and higher gate threshold (2.0–3.0 V). | Less efficient at 1400 MHz due to suboptimal internal matching; requires gate bias redesign for Class C operation. | Consider only for multi-band designs extending into L/S-band; not drop-in for MRF6V14300HR3's 1200–1400 MHz optimized performance. |
Compared with MRF6V14300HR3, the MRFE6VP6300HR5 offers higher power but sacrifices VSWR robustness and thermal efficiency, while the MRF6V2300NBR1 trades bandwidth for reduced gain and less flexible gate drive-neither matches MRF6V14300HR3's balanced combination of 330 W, 18 dB gain, 60.5% efficiency, and 5:1 VSWR tolerance at 1400 MHz.
Availability
MRF6V14300HR3 is available at Aetrix Electronics and suitable for weather radar transmitters, industrial RF heating systems, military ground radar modules, avionics pulse amplifiers, and S-band communications requiring stable component supply across long-lifecycle programs.
Supply support for MRF6V14300HR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Freescale Semiconductor (now part of NXP Semiconductors) is a pioneer in RF power LDMOS technology, specializing in high-reliability semiconductor solutions for aerospace, defense, and industrial markets.
The MRF6V14300HR3 belongs to Freescale's MRF6V family of pulsed RF power transistors, engineered specifically for S-band radar and industrial heating applications demanding high peak power, rugged VSWR tolerance, and thermally robust packaging.
FAQ
What is the maximum safe operating junction temperature for the MRF6V14300HR3?
The MRF6V14300HR3 has a maximum operating junction temperature (TJ) of 225°C, as specified in Table 1 of the Freescale datasheet Rev. 3 (April 2010). Continuous operation at this limit affects MTTF, and thermal design must ensure junction temperature remains below 225°C under worst-case pulsed conditions-verified via the Freescale Electromigration MTTF Calculator.
Does the MRF6V14300HR3 require external matching components for 1400 MHz operation?
No-the MRF6V14300HR3 is internally matched for 1200–1400 MHz operation, as confirmed in the Features section and Functional Test data. Freescale's test circuit achieves 18 dB gain and 60.5% efficiency at 1400 MHz without external matching networks, though discrete capacitors (e.g., C1–C9 in Table 5) are used for DC blocking, bypassing, and bias stabilization-not fundamental impedance transformation.
What is the gate threshold voltage range for the MRF6V14300HR3?
The gate threshold voltage (VGS(th)) for the MRF6V14300HR3 is 0.9 V to 2.4 V (min to max) at VDS = 10 VDC and ID = 662 μA, per Table 4 of the datasheet. This low-threshold range enables efficient Class C operation with minimal gate drive voltage swing, supporting the device's stated "greater negative gate-source voltage range" feature.
How is ESD protection implemented in the MRF6V14300HR3?
The MRF6V14300HR3 integrates on-die ESD protection circuits qualified to JESD22-A114 Class 1C (HBM), JESD22-A115 Class A (MM), and JESD22-C101 Class IV (CDM), as documented in Table 3. This eliminates the need for external gate-protection diodes in most pulsed RF amplifier layouts, provided proper PCB layout practices (short traces, grounded guard rings) are followed.
What does the 'R3' suffix in MRF6V14300HR3 indicate?
Per the datasheet footnote, the 'R3' suffix denotes tape-and-reel packaging: 250 units per 56 mm wide, 13-inch diameter reel. This packaging format ensures automated placement compatibility and ESD-safe handling-distinct from the 'HSR3' variant which uses Case 465-06 (NI-780) instead of Case 465A-06 (NI-780S) and differs in mechanical dimensions and flange configuration.
MRF6V14300HR3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- SOT-957A
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 1.4GHz
- Gain:
- 18dB
- Voltage - Test:
- 50 V
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- 150 mA
- Power - Output:
- 330W
- Voltage - Rated:
- 100 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- NI-780H-2L
MRF6V14300HR3 FAQ
1.How can I place an order for MRF6V14300HR3 through Aetrix?
Please submit a Request for Quotation (RFQ) for MRF6V14300HR3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MRF6V14300HR3 reliable?
The price and inventory of MRF6V14300HR3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRF6V14300HR3 is usually 5 days.
3.What payment methods are accepted for MRF6V14300HR3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRF6V14300HR3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MRF6V14300HR3?
MRF6V14300HR3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MRF6V14300HR3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MRF6V14300HR3?
For technical support, including MRF6V14300HR3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRF6V14300HR3 requirements.
6.How does Aetrix verify that MRF6V14300HR3 is sourced from the original manufacturer or authorized distributors?
All MRF6V14300HR3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRF6V14300HR3 meets industry standards.
7.What is the process for return or replacement of MRF6V14300HR3?
All MRF6V14300HR3 units undergo pre-shipment inspection (PSI). If there is an issue with MRF6V14300HR3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MRF6V14300HR3 part is unused and in its original packaging.
Return procedure for MRF6V14300HR3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MRF6V14300HR3 Tags
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3SK294(TE85L,F)
Toshiba Semiconductor and Storage
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SAV-551+
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TAV2-501+
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AFT05MS004NT1
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SAV-541+
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CE3512K2-C1
CEL
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AFM907NT1
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SKY65050-372LF
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CE3520K3-C1
CEL
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AFT09MS007NT1
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AFT09MS015NT1
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