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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs

NXP Semiconductors MRF6V14300HR5

Name: MRF6V14300HR5
Brand: NXP Semiconductors
SKU: MRF6V14300HR5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: MRF6V14300HR5

Manufacturer:: NXP Semiconductors

Category:: Single FETs, MOSFETs

Package:: SOT-957A

Datasheet:: MRF6V14300HR5.pdf

Description:: RF MOSFET LDMOS 50V NI780

Quantity:: RFQ Add To RFQ list

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Product details

Overview

MRF6V14300HR5 from NXP Semiconductors (formerly Freescale) is a 1400 MHz, 330 W peak pulsed RF power LDMOS transistor in a NI-780S package, designed for radar and pulsed RF amplification. It operates at 50 Vdc drain supply, delivers 18 dB power gain and 60.5% drain efficiency at 12% duty cycle, and withstands 5:1 VSWR under full-rated pulsed load.

For engineers reviewing the MRF6V14300HR5 datasheet, MRF6V14300HR5 pinout, MRF6V14300HR5 application, or MRF6V14300HR5 equivalent, this page provides verified specifications, thermal performance data, impedance matching details, and real-world pulsed RF operating conditions - critical for radar transmitter stage design, high-power S-band pulse amplifier layout, and ruggedized RF system reliability validation.

Technical Context

This lateral N-channel enhancement-mode MOSFET is internally matched for 50 Ω systems at 1200–1400 MHz, with series-equivalent large-signal impedance characterized at 1200, 1300, and 1400 MHz. Its gate threshold voltage (0.9–2.4 V) and wide negative gate-source voltage range support stable Class C operation in pulsed radar transmitters.

The device features integrated ESD protection (HBM Class 1C, MM Class A), qualified for up to +225°C junction temperature, and exhibits ZθJC = 0.13°C/W under 330 W pulsed conditions (300 μs, 12% duty). Its Crss = 0.6 pF and Ciss = 330 pF enable broadband stability with minimal external compensation.

Key Specifications

Parameter	Value and Actual Design Meaning
Operating Frequency	1200–1400 MHz - supports S-band radar pulse amplification without retuning across full band
Peak Output Power	330 W - enables high-energy radar pulses at 12% duty cycle with 300 μs width
Drain Efficiency	60.5% @ 330 W peak - reduces thermal load and DC power demand in pulsed transmitters
Power Gain	18 dB - achieves >60× power multiplication with single-stage amplification
V_DS Rating	+100 V - allows safe 50 Vdc operation with margin against transient voltage spikes
Junction Temperature	+225°C max - supports high-reliability operation in conduction-cooled radar modules
VSWR Tolerance	5:1 @ 1400 MHz - maintains output power integrity under antenna mismatch in field-deployed radar
Thermal Resistance	ZθJC = 0.13°C/W - enables efficient heat transfer to heatsink in high-pulsed-power applications

Pinout & Package

Package: NI-780S (Case 465A-06, Style 1), ceramic/metal flange-mount package with integral lid and insulator; dimensions 33.91 × 9.65 × 4.32 mm (L × W × H); RoHS compliant; supplied in tape-and-reel (250 units per 13-inch reel).

Pin/Terminal	Circuit Role	Design Meaning
1. Drain	High-power RF output node	Connected directly to heatsink via flange; carries full 330 W pulsed RF current and DC bias
2. Gate	RF input control terminal	Low-impedance gate drive point; requires precise 1.5–3.0 V_GS(Q) bias for 150 mA quiescent current
3. Source	RF/DC reference and return path	Internally bonded to flange ground; forms low-inductance return for gate and drain currents

Key Features

Feature	Design Value
Internally matched I/O	Eliminates need for external input/output matching networks at 1200–1400 MHz, reducing board space and tuning complexity
ESD protection	HBM Class 1C, MM Class A - ensures robustness during handling and integration into radar front-end assemblies
Wide negative V_GS range	–6.0 V - enables deep Class C biasing for improved pulse fidelity and efficiency in radar modulators
5:1 VSWR capability	Guarantees no degradation in output power when driving mismatched antennas or circulators in rotating radar systems
Characterized large-signal Z-parameters	Provides verified source/load impedances (e.g., Z_source = 2.70 – j4.10 Ω @ 1200 MHz) for accurate PA simulation and layout

Applications

Weather Radar Transmitter	Maritime Surveillance Radar
Use Scenario: High-duty-cycle pulsed S-band transmitter in Doppler weather radar systems requiring long-range precipitation detection. IC Role / Device Role / Timing Role: Final RF power amplification stage delivering 330 W peak pulses at 1400 MHz with 12% duty cycle. Use Value: 60.5% drain efficiency minimizes cooling requirements in sealed radar radomes; 5:1 VSWR tolerance accommodates antenna icing-induced mismatches.	Use Scenario: Shipboard surveillance radar operating in harsh salt-mist environments with frequent antenna rotation and wind loading. IC Role / Device Role / Timing Role: Pulsed RF power amplifier in solid-state transmitter chain, driven by low-power driver stages. Use Value: +225°C junction rating ensures reliability under sustained high-temperature operation; NI-780S flange mount enables direct conduction cooling to marine-grade heatsinks.
Ground-Based Air Traffic Control Radar	Defense Electronic Warfare Jammer
Use Scenario: Long-range ATC radar requiring high pulse repetition frequency and consistent peak power over extended operational cycles. IC Role / Device Role / Timing Role: Primary pulsed RF output device in multi-kilowatt transmitter array, operated in parallel configurations. Use Value: ZθJC = 0.13°C/W enables predictable thermal management across array elements; characterized impedance data supports precise combiner design.	Use Scenario: Wideband jamming system generating high-power S-band noise or deceptive pulses against airborne threats. IC Role / Device Role / Timing Role: High-efficiency pulsed RF power stage delivering broadband interference energy with fast rise/fall times. Use Value: Low Crss (0.6 pF) and high gain flatness (±0.5 dB) preserve pulse fidelity across 1200–1400 MHz; internal matching simplifies broadband output filtering.

Weather Radar Transmitter

Maritime Surveillance Radar

Use Scenario: High-duty-cycle pulsed S-band transmitter in Doppler weather radar systems requiring long-range precipitation detection.

IC Role / Device Role / Timing Role: Final RF power amplification stage delivering 330 W peak pulses at 1400 MHz with 12% duty cycle.

Use Value: 60.5% drain efficiency minimizes cooling requirements in sealed radar radomes; 5:1 VSWR tolerance accommodates antenna icing-induced mismatches.

Use Scenario: Shipboard surveillance radar operating in harsh salt-mist environments with frequent antenna rotation and wind loading.

IC Role / Device Role / Timing Role: Pulsed RF power amplifier in solid-state transmitter chain, driven by low-power driver stages.

Use Value: +225°C junction rating ensures reliability under sustained high-temperature operation; NI-780S flange mount enables direct conduction cooling to marine-grade heatsinks.

Ground-Based Air Traffic Control Radar

Defense Electronic Warfare Jammer

Use Scenario: Long-range ATC radar requiring high pulse repetition frequency and consistent peak power over extended operational cycles.

IC Role / Device Role / Timing Role: Primary pulsed RF output device in multi-kilowatt transmitter array, operated in parallel configurations.

Use Value: ZθJC = 0.13°C/W enables predictable thermal management across array elements; characterized impedance data supports precise combiner design.

Use Scenario: Wideband jamming system generating high-power S-band noise or deceptive pulses against airborne threats.

IC Role / Device Role / Timing Role: High-efficiency pulsed RF power stage delivering broadband interference energy with fast rise/fall times.

Use Value: Low Crss (0.6 pF) and high gain flatness (±0.5 dB) preserve pulse fidelity across 1200–1400 MHz; internal matching simplifies broadband output filtering.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MRF6V14300HSR3	Different package: NI-780 (Case 465-06), slightly smaller footprint (20.45 × 9.65 mm vs. 33.91 × 9.65 mm); identical electrical specs and thermal performance	Suitable for space-constrained radar modules where flange area is limited; same pinout but reduced thermal mass	Select MRF6V14300HSR3 when PCB real estate is constrained and lower thermal inertia is acceptable
MRFE6VP6300HR5	Higher frequency range (1300–1600 MHz), higher peak power (630 W), higher V_DD rating (65 V), larger NI-780S package; otherwise similar architecture and matching	Targeted at next-generation multi-band radar and EW systems requiring extended bandwidth and headroom	Choose MRFE6VP6300HR5 only when 1400–1600 MHz coverage or >330 W peak is required; not drop-in compatible due to different bias and thermal requirements

Compared with MRF6V14300HR5, the MRF6V14300HSR3 offers identical RF performance in a more compact NI-780 package-ideal for dense array integration-while the MRFE6VP6300HR5 extends frequency and power capability at the cost of increased bias complexity and thermal management demands.

Availability

MRF6V14300HR5 is available at Aetrix Electronics and suitable for radar transmitter development, defense electronic warfare systems, and industrial S-band RF heating applications requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for MRF6V14300HR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors acquired Freescale Semiconductor in 2015 and continues to support its high-power RF LDMOS portfolio for defense, aerospace, and industrial applications.

The MRF6V14300HR5 belongs to NXP's legacy Freescale MRF6V family of pulsed RF power transistors, engineered specifically for ruggedized S-band radar transmitters demanding high peak power, VSWR resilience, and thermal robustness.

FAQ

What is the maximum continuous drain current rating for the MRF6V14300HR5?

The MRF6V14300HR5 is rated for pulsed operation only and does not specify a continuous drain current. Its absolute maximum ratings define V_DS = +100 V and T_J = +225°C, with thermal performance validated at 330 W peak (39.6 W avg.) under 12% duty cycle. Continuous operation is not supported per Freescale's published SOA curves and MTTF modeling.

Does the MRF6V14300HR5 require external matching networks for 1400 MHz operation?

No - the MRF6V14300HR5 is internally matched for 50 Ω systems across 1200–1400 MHz. Freescale's test data confirms optimal performance (18 dB gain, 60.5% efficiency) using only the specified microstrip-based evaluation board (Z1–Z23), with no discrete matching components needed on input or output.

What is the gate bias voltage range required to achieve 150 mA quiescent drain current in the MRF6V14300HR5?

The MRF6V14300HR5 requires a gate quiescent voltage (V_GS(Q)) of 1.5–3.0 Vdc to establish 150 mA IDQ at V_DD = 50 Vdc, as measured in Freescale's functional test fixture. This range accounts for unit-to-unit variation and ensures stable Class AB/Class C operation in pulsed radar amplifiers.

Can the MRF6V14300HR5 be used in CW (continuous wave) applications?

No - the MRF6V14300HR5 is explicitly characterized and qualified for pulsed operation only (300 μs pulse width, 1–12% duty cycle). Its Safe Operating Area (SOA) diagram and MTTF model assume pulsed thermal cycling; CW use violates maximum junction temperature limits and voids reliability guarantees.

What is the thermal resistance from junction to case (ZθJC) for the MRF6V14300HR5 under rated pulsed conditions?

The MRF6V14300HR5 has a verified thermal resistance of ZθJC = 0.13°C/W when operated at 330 W peak, 300 μs pulse width, and 12% duty cycle with case temperature maintained at 65°C. This value is measured per AN1955 methodology and is critical for heatsink sizing in radar transmitter designs.

MRF6V14300HR5 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: SOT-957A

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: LDMOS

Configuration:: -

Frequency:: 1.4GHz

Gain:: 18dB

Voltage - Test:: 50 V

Current Rating (Amps):: -

Noise Figure:: -

Current - Test:: 150 mA

Power - Output:: 330W

Voltage - Rated:: 100 V

Grade:: -

Qualification:: -

Mounting Type:: Chassis Mount

Supplier Device Package:: NI-780H-2L

MRF6V14300HR5 FAQ

1.How can I place an order for MRF6V14300HR5 through Aetrix?

Please submit a Request for Quotation (RFQ) for MRF6V14300HR5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MRF6V14300HR5 reliable?

The price and inventory of MRF6V14300HR5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRF6V14300HR5 is usually 5 days.

3.What payment methods are accepted for MRF6V14300HR5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRF6V14300HR5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MRF6V14300HR5?

MRF6V14300HR5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MRF6V14300HR5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MRF6V14300HR5?

For technical support, including MRF6V14300HR5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRF6V14300HR5 requirements.

6.How does Aetrix verify that MRF6V14300HR5 is sourced from the original manufacturer or authorized distributors?

All MRF6V14300HR5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRF6V14300HR5 meets industry standards.

7.What is the process for return or replacement of MRF6V14300HR5?

All MRF6V14300HR5 units undergo pre-shipment inspection (PSI). If there is an issue with MRF6V14300HR5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MRF6V14300HR5 part is unused and in its original packaging.

Return procedure for MRF6V14300HR5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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