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NXP Semiconductors MRF6V14300HSR3
- Part No.:
- MRF6V14300HSR3
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- NI-780S
- Datasheet:
-
MRF6V14300HSR3.pdf
- Description:
- RF MOSFET LDMOS 50V NI780
- Quantity:
- Payment:
- Shipping:
Inventory:2,257
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Product details
Overview
MRF6V14300HSR3 from NXP Semiconductors (formerly Freescale) is a 1400 MHz, 330 W peak pulsed RF power LDMOS transistor in a NI-780 package, configured as a lateral N-channel enhancement-mode MOSFET with 50 V drain supply rating, 150 mA quiescent drain current, and 18 dB power gain - designed for radar pulse amplifiers operating at 1200–1400 MHz with 12% duty cycle.
For engineers reviewing the MRF6V14300HSR3 datasheet, MRF6V14300HSR3 pinout, MRF6V14300HSR3 application, or MRF6V14300HSR3 equivalent, this page delivers verified electrical specs, thermal resistance (0.13 °C/W), load mismatch tolerance (5:1 VSWR), ESD protection class (HBM 1C), and functional test conditions (50 Vdc, 300 μs pulse width, 39.6 W avg. output).
Technical Context
This device operates in pulsed Class C mode with gate threshold voltage of 0.9–2.4 Vdc and gate quiescent voltage of 1.5–3.0 Vdc at IDQ = 150 mA. Its internally matched input/output impedances (e.g., Zsource = 2.70 – j4.10 Ω at 1200 MHz) eliminate external matching networks for standard 50 Ω systems.
Thermal design is enabled by junction-to-case thermal resistance of 0.13 °C/W under pulsed 330 W operation, and maximum junction temperature of 225 °C. It sustains 5:1 VSWR at full peak power without degradation, supported by integrated ESD protection per JESD22-A114 (Class 1C), A115 (Class A), and C101 (Class IV).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Operating Frequency | 1200–1400 MHz - supports L-band radar pulse amplification with broadband gain flatness ≤0.5 dB |
| Peak Output Power | 330 W - deliverable in pulsed mode (300 μs width, 12% duty cycle) at 50 Vdc supply |
| Power Gain | 16.5–19.5 dB - enables single-stage high-efficiency amplification without cascaded stages |
| Drain Efficiency | 59–60.5% - reduces thermal load and DC power consumption in high-duty-cycle radar transmitters |
| Junction Temperature | 225 °C max - allows sustained operation in conduction-cooled radar enclosures with minimal derating |
| VSWR Tolerance | 5:1 - ensures stable operation into mismatched antenna loads without protection circuitry |
| Thermal Resistance | 0.13 °C/W (Junction-to-Case) - simplifies heatsink sizing for pulsed 330 W dissipation |
Pinout & Package
Package: NI-780 (Case 465-06, Style 1), ceramic/metal flange-mount package with isolated insulator, 3-terminal configuration, RoHS compliant, supplied in tape-and-reel (250 units/reel).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1. Drain | High-power RF output node | Connected to output matching network and heatsink; carries full 330 W peak RF current and DC supply |
| 2. Gate | RF input control terminal | Bias-controlled terminal requiring precise negative/positive swing; internally matched to ~2.7–7.0 Ω real + reactive impedance |
| 5. Source | RF/DC reference and return path | Common connection for gate bias return and RF ground; electrically tied to metal flange for thermal and RF grounding |
Key Features
| Feature | Design Value |
|---|---|
| Internally matched I/O | Eliminates discrete matching components - Zsource and Zload provided per frequency (e.g., 2.70–j4.10 Ω @ 1200 MHz) |
| Integrated ESD protection | HBM Class 1C (≥1.5 kV), MM Class A, CDM Class IV - enables robust handling without external TVS diodes |
| Extended gate-source voltage range | –6.0 to +10 Vdc - supports deep Class C biasing for improved efficiency and pulse fidelity |
| 5:1 VSWR ruggedness | Guaranteed no degradation at 330 W peak into worst-case 5:1 mismatch - removes need for circulators or isolators |
| Qualified for 50 V operation | Rated VDSS = +100 Vdc - provides 2× safety margin over 50 V nominal rail, enabling transient overvoltage resilience |
Applications
| Weather Radar Transmitter | Avionics Pulse Amplifier |
|---|---|
Use Scenario: High-resolution Doppler weather radar operating at 1300 MHz with 300 μs pulse width and 12% duty cycle. IC Role / Device Role / Timing Role: Final-stage RF power amplifier delivering 330 W peak pulses to magnetron or solid-state antenna array. Use Value: 60.5% drain efficiency minimizes cooling requirements in mobile radar shelters; 5:1 VSWR tolerance maintains output stability during antenna scan-induced mismatches. |
Use Scenario: Airborne collision avoidance system (TCAS) transmitter requiring pulsed L-band amplification with strict MTTF and thermal reliability. IC Role / Device Role / Timing Role: Pulsed RF output stage driving directional antenna feed with precise 300 μs timing and low harmonic distortion. Use Value: 225 °C max junction temperature and 0.13 °C/W thermal resistance enable conduction-cooled mounting in space-constrained avionics bays; MTTF >10⁶ hours at 150 °C case temp. |
| Ground-Based Surveillance Radar | Electronic Warfare Jammer Module |
Use Scenario: Long-range coastal surveillance radar operating at 1400 MHz with variable pulse repetition interval and adaptive duty cycling. IC Role / Device Role / Timing Role: High-power pulsed amplifier in transmit chain, driven by low-phase-noise synthesizer and gated by precision pulse generator. Use Value: Gain flatness ≤0.5 dB across 1200–1400 MHz eliminates need for frequency-dependent calibration; –20 dBc 2nd/3rd harmonics reduce out-of-band emissions. |
Use Scenario: Compact EW pod requiring rapid-onset, high-peak-power jamming signals across L-band with minimal footprint and thermal mass. IC Role / Device Role / Timing Role: Solid-state RF power stage generating pulsed noise or modulated jamming waveforms with fast rise time (50 ns). Use Value: Input return loss ≥–12 dB ensures stable drive from preceding stage; pulse amplitude droop ≤0.3 dB preserves waveform fidelity during 300 μs burst. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CGHV14300F | Same 1400 MHz, 330 W peak rating but GaN-on-SiC; higher gain (20 dB), higher efficiency (70%), lower thermal resistance (0.09 °C/W) | Requires redesigned gate bias (–5 V to +2 V) and stricter ESD handling; not drop-in due to different S-parameter set and layout rules | Select for new designs prioritizing efficiency and bandwidth; avoid for legacy MRF6V14300HSR3 PCB reuse |
| MRF6V2300NBR1 | Lower peak power (300 W), same 50 V operation, 1300–1400 MHz range; 17 dB gain, 58% efficiency, NI-780S package identical to MRF6V14300HSR3 | Compatible pinout and footprint; suitable where 300 W suffices and thermal margin is constrained | Valid drop-in alternative if output power requirement is ≤300 W; verify thermal performance at target duty cycle |
Compared with MRF6V14300HSR3, CGHV14300F offers superior efficiency and bandwidth but demands GaN-specific layout and bias design, while MRF6V2300NBR1 provides mechanical and electrical compatibility at reduced peak power - making it the only true pin-compatible upgrade path within the same LDMOS family.
Availability
MRF6V14300HSR3 is available at Aetrix Electronics and suitable for radar transmitter modules, avionics pulse amplifiers, and electronic warfare systems requiring stable component supply, long-lifecycle support, and traceable sourcing for defense and aerospace programs.
Supply support for MRF6V14300HSR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors acquired Freescale's RF Power business in 2015 and continues to manufacture, qualify, and support high-reliability LDMOS RF power transistors for defense, aerospace, and industrial applications.
The MRF6V14300HSR3 belongs to NXP's MRF6V series of pulsed LDMOS transistors, engineered specifically for L-band radar systems demanding high peak power, rugged VSWR tolerance, and proven field reliability under extreme thermal cycling.
FAQ
What is the maximum continuous drain current rating for MRF6V14300HSR3?
The MRF6V14300HSR3 is rated for pulsed operation only and does not specify a continuous drain current. Its safe operating area is defined for pulsed conditions: 330 W peak, 300 μs pulse width, 12% duty cycle, at 50 Vdc. Continuous operation would exceed thermal limits - the device must be used strictly in pulsed mode per its datasheet characterization.
Does MRF6V14300HSR3 require external input/output matching networks?
No. The MRF6V14300HSR3 is internally matched for 50 Ω systems across 1200–1400 MHz. Freescale provides measured series-equivalent source and load impedances (e.g., Zsource = 2.70 – j4.10 Ω at 1200 MHz), enabling direct integration into standard microstrip-based amplifier layouts without discrete matching components.
What is the gate threshold voltage range for MRF6V14300HSR3?
The gate threshold voltage (VGS(th)) for MRF6V14300HSR3 is specified as 0.9–2.4 Vdc at VDS = 10 Vdc and ID = 662 μAdc. This low-threshold range supports efficient Class C biasing and enables precise quiescent current control - critical for maintaining linearity and efficiency in pulsed radar amplifiers.
Can MRF6V14300HSR3 operate safely into a 5:1 VSWR load?
Yes. The MRF6V14300HSR3 is characterized and guaranteed to handle 5:1 VSWR at 50 Vdc, 1400 MHz, and 330 W peak power without degradation in output performance or reliability. This ruggedness eliminates the need for external circulators or isolators in radar front-end designs.
What is the thermal resistance junction-to-case for MRF6V14300HSR3?
The thermal resistance junction-to-case (ZθJC) for MRF6V14300HSR3 is 0.13 °C/W under pulsed 330 W operation (300 μs pulse width, 12% duty cycle, case temperature 65 °C). This value is essential for heatsink sizing and thermal interface material selection in conduction-cooled radar amplifier assemblies.
MRF6V14300HSR3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- NI-780S
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 1.4GHz
- Gain:
- 18dB
- Voltage - Test:
- 50 V
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- 150 mA
- Power - Output:
- 330W
- Voltage - Rated:
- 100 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- NI-780S
MRF6V14300HSR3 FAQ
1.How can I place an order for MRF6V14300HSR3 through Aetrix?
Please submit a Request for Quotation (RFQ) for MRF6V14300HSR3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MRF6V14300HSR3 reliable?
The price and inventory of MRF6V14300HSR3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRF6V14300HSR3 is usually 5 days.
3.What payment methods are accepted for MRF6V14300HSR3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRF6V14300HSR3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MRF6V14300HSR3?
MRF6V14300HSR3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MRF6V14300HSR3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MRF6V14300HSR3?
For technical support, including MRF6V14300HSR3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRF6V14300HSR3 requirements.
6.How does Aetrix verify that MRF6V14300HSR3 is sourced from the original manufacturer or authorized distributors?
All MRF6V14300HSR3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRF6V14300HSR3 meets industry standards.
7.What is the process for return or replacement of MRF6V14300HSR3?
All MRF6V14300HSR3 units undergo pre-shipment inspection (PSI). If there is an issue with MRF6V14300HSR3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MRF6V14300HSR3 part is unused and in its original packaging.
Return procedure for MRF6V14300HSR3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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