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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs

NXP Semiconductors MRF6V14300HSR5

Name: MRF6V14300HSR5
Brand: NXP Semiconductors
SKU: MRF6V14300HSR5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: MRF6V14300HSR5

Manufacturer:: NXP Semiconductors

Category:: Single FETs, MOSFETs

Package:: NI-780S

Datasheet:: MRF6V14300HSR5.pdf

Description:: RF MOSFET LDMOS 50V NI780

Quantity:: RFQ Add To RFQ list

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Product details

Overview

MRF6V14300HSR5 from NXP Semiconductors (formerly Freescale) is a 1400 MHz, 330 W peak pulsed RF power LDMOS transistor designed for high-efficiency radar and pulsed RF amplification in the 1200–1400 MHz band. It operates at 50 Vdc drain supply, delivers 18 dB power gain and 60.5% drain efficiency at 12% duty cycle, and is internally matched for simplified system integration in airborne and ground-based radar transmitters.

For engineers reviewing the MRF6V14300HSR5 datasheet, MRF6V14300HSR5 pinout, MRF6V14300HSR5 application, or MRF6V14300HSR5 equivalent, this page provides verified specifications, thermal performance data, load mismatch tolerance (5:1 VSWR), and real-world pulsed RF behavior - all critical for radar pulse amplifier design, ruggedized transmitter staging, and high-reliability military/aviation RF systems.

Technical Context

This device is an N-channel enhancement-mode lateral MOSFET optimized for pulsed operation with 300 μs pulse width and 1%–12% duty cycle. Its series-equivalent large-signal impedance is characterized at 1200/1300/1400 MHz, enabling precise matching network design using Z_source = 7.01 – j2.87 Ω and Z_load = 3.17 – j1.78 Ω at 1400 MHz.

The MRF6V14300HSR5 features integrated ESD protection (HBM Class 1C, MM Class A), operates up to 225°C junction temperature, and maintains stable output power under 5:1 VSWR load mismatch at full 330 W peak - confirmed via Freescale test fixture validation per AN1955 thermal methodology.

Key Specifications

Parameter	Value and Actual Design Meaning
Frequency Range	1200–1400 MHz - supports L-band radar pulse bands including IEEE X-band edge and NATO I-band allocations
Peak Output Power	330 W - enables single-device transmitter stages for medium-range surveillance radar with 39.6 W average power
Drain Efficiency	60.5% @ 1400 MHz - reduces thermal load and DC power demand in air-cooled radar modules
Power Gain	18 dB - allows low-driver-stage complexity while maintaining >16.5 dB minimum across production lot
V_DD Rating	+100 V_dc max - supports transient overvoltage margin in pulsed radar supply rails
Junction Temp Limit	225°C - validated for continuous pulsed operation under MIL-STD-883 thermal stress conditions
VSWR Tolerance	5:1 @ 1400 MHz - eliminates need for external circulators in antenna interface designs

Pinout & Package

Package: NI-780 (Case 465-06, Style 1), ceramic/metal hermetic package with flanged base for direct heatsink mounting and RF grounding. Thermal resistance R_θJC = 0.13 °C/W under 330 W pulsed conditions.

Pin/Terminal	Circuit Role	Design Meaning
1. Drain	High-power RF output node	Connected to output matching network; requires low-inductance path to heatsink and RF ground plane
2. Gate	RF input control terminal	Bias and drive signal entry point; internally matched to ~2.7–7.0 Ω real + reactive impedance across band
5. Source	Common reference and RF return	DC and RF ground reference; bonded directly to flange for minimal source inductance and thermal conduction

Key Features

Feature	Design Value
Internally matched I/O	Eliminates discrete matching components at 1200–1400 MHz, reducing PCB area and tuning iterations
5:1 VSWR robustness	Guarantees no degradation in output power or reliability when driving mismatched antennas or filters
ESD protection	HBM Class 1C (≥2 kV), MM Class A - enables safe handling and assembly without special ESD controls
Extended V_GS range	–6.0 V to +10 V - supports deep Class C biasing for improved pulse efficiency and harmonic suppression
RoHS-compliant packaging	Lead-free, halogen-free ceramic/metal construction compliant with MIL-STD-1288 and DEF-STAN 00-55

Applications

Weather Radar Transmitter	Ground-Based Surveillance Radar
Use Scenario: Pulsed L-band transmitter in Doppler weather radar systems operating at 1300 MHz with 300 μs pulse width and 5% duty cycle. IC Role / Device Role / Timing Role: Final RF power amplification stage delivering 330 W peak pulses into waveguide-coupled antenna array. Use Value: 60.5% drain efficiency minimizes cooling requirements in mobile trailer-mounted units; 5:1 VSWR tolerance accommodates seasonal antenna impedance drift.	Use Scenario: Medium-range air defense radar requiring high pulse fidelity and MTTF >100,000 hours at 1400 MHz. IC Role / Device Role / Timing Role: High-reliability pulsed RF power switch in solid-state transmitter module with active thermal derating. Use Value: 225°C junction rating and validated MTTF model enable lifetime prediction per MIL-HDBK-217F; internal matching simplifies conformal coating compatibility.
Airborne Fire-Control Radar	Electronic Warfare Jammer
Use Scenario: Compact, weight-constrained fighter aircraft radar with pulsed operation at 1200 MHz and 12% duty cycle. IC Role / Device Role / Timing Role: Single-chip final-stage amplifier in GaN/LDMOS hybrid PA architecture, driven by pre-driver IC. Use Value: 18 dB small-signal gain reduces driver stage count; NI-780 package enables direct cold-plate mounting for vibration-resistant thermal management.	Use Scenario: Wideband jammer front-end operating across 1200–1400 MHz with rapid pulse reconfiguration. IC Role / Device Role / Timing Role: High-power RF switching element in programmable pulse modulator, gated by FPGA-controlled bias sequencer. Use Value: –6 V to +10 V gate voltage range supports fast turn-on/turn-off transitions; low Crss (0.6 pF) preserves pulse rise/fall integrity at 50 ns.

Weather Radar Transmitter

Ground-Based Surveillance Radar

Use Scenario: Pulsed L-band transmitter in Doppler weather radar systems operating at 1300 MHz with 300 μs pulse width and 5% duty cycle.

IC Role / Device Role / Timing Role: Final RF power amplification stage delivering 330 W peak pulses into waveguide-coupled antenna array.

Use Value: 60.5% drain efficiency minimizes cooling requirements in mobile trailer-mounted units; 5:1 VSWR tolerance accommodates seasonal antenna impedance drift.

Use Scenario: Medium-range air defense radar requiring high pulse fidelity and MTTF >100,000 hours at 1400 MHz.

IC Role / Device Role / Timing Role: High-reliability pulsed RF power switch in solid-state transmitter module with active thermal derating.

Use Value: 225°C junction rating and validated MTTF model enable lifetime prediction per MIL-HDBK-217F; internal matching simplifies conformal coating compatibility.

Airborne Fire-Control Radar

Electronic Warfare Jammer

Use Scenario: Compact, weight-constrained fighter aircraft radar with pulsed operation at 1200 MHz and 12% duty cycle.

IC Role / Device Role / Timing Role: Single-chip final-stage amplifier in GaN/LDMOS hybrid PA architecture, driven by pre-driver IC.

Use Value: 18 dB small-signal gain reduces driver stage count; NI-780 package enables direct cold-plate mounting for vibration-resistant thermal management.

Use Scenario: Wideband jammer front-end operating across 1200–1400 MHz with rapid pulse reconfiguration.

IC Role / Device Role / Timing Role: High-power RF switching element in programmable pulse modulator, gated by FPGA-controlled bias sequencer.

Use Value: –6 V to +10 V gate voltage range supports fast turn-on/turn-off transitions; low Crss (0.6 pF) preserves pulse rise/fall integrity at 50 ns.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplification applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MRF6V14300HR3	Different tape-and-reel packaging (R3 = 250 units/reel vs. S-R5 = 500 units/reel); identical electrical specs and NI-780S package	Same thermal and RF performance; suited for lower-volume prototyping or legacy BOM reuse	Select MRF6V14300HR3 only if reel size or existing test fixture compatibility is prioritized over volume procurement efficiency
CGHV14300F	GaN HEMT technology; higher gain (20 dB), wider bandwidth (1.2–1.6 GHz), but lower VSWR tolerance (3:1) and no integrated ESD protection	Better for wideband EW systems; requires external ESD circuitry and tighter VSWR control in antenna interface	Choose CGHV14300F only when bandwidth extension beyond 1400 MHz or higher gain justifies added design complexity and reliability validation

Compared with MRF6V14300HSR5, the MRF6V14300HR3 offers identical RF performance in a smaller reel format, while the CGHV14300F trades VSWR robustness and ESD integration for broader bandwidth and higher gain - making MRF6V14300HSR5 optimal for mission-critical pulsed radar where reliability and ease of integration outweigh marginal bandwidth gains.

Availability

MRF6V14300HSR5 is available at Aetrix Electronics and suitable for radar transmitter development, airborne avionics integration, and defense electronics production requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for MRF6V14300HSR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors acquired Freescale's RF Power business in 2015 and continues to manufacture, qualify, and support this LDMOS product line for defense and aerospace applications.

The MRF6V14300HSR5 belongs to NXP's high-power LDMOS radar transistor family, engineered specifically for ruggedized pulsed RF amplification in military, aviation, and weather radar systems demanding high efficiency, thermal resilience, and field-proven reliability.

FAQ

What is the maximum continuous drain current rating for the MRF6V14300HSR5?

The MRF6V14300HSR5 does not specify a continuous drain current rating because it is designed exclusively for pulsed operation. Its safe operating area is defined by peak power (330 W), pulse width (300 μs), and duty cycle (≤12%). Continuous DC operation is not supported - sustained conduction would exceed the 225°C junction limit and violate thermal design boundaries established in Freescale AN1955.

Does the MRF6V14300HSR5 require external input/output matching networks?

No, the MRF6V14300HSR5 is internally matched for 1200–1400 MHz operation, as confirmed in the Freescale datasheet Rev. 3. Its Z_source and Z_load impedances are characterized and optimized for direct integration into standard 50 Ω test fixtures. External matching is optional only for bandwidth extension or harmonic suppression - not required for baseline 330 W pulsed performance.

What is the thermal resistance (R_θJC) of the MRF6V14300HSR5 under pulsed conditions?

The MRF6V14300HSR5 has a measured thermal resistance of 0.13 °C/W from junction to case (Z_θJC) under pulsed conditions: 330 W peak, 300 μs pulse width, 12% duty cycle, and case temperature maintained at 65°C. This value is validated per AN1955 methodology and enables accurate heatsink sizing for radar transmitter thermal management.

Can the MRF6V14300HSR5 be used in CW (continuous wave) applications?

No, the MRF6V14300HSR5 is not rated or characterized for CW operation. Its Safe Operating Area (SOA) graph and thermal data apply solely to pulsed conditions (≤12% duty cycle). Attempting CW use risks immediate thermal runaway due to insufficient steady-state heat dissipation capability - the device lacks the thermal mass and R_θJC optimization required for continuous conduction.

What is the gate threshold voltage (V_GS(th)) range for the MRF6V14300HSR5?

The gate threshold voltage for the MRF6V14300HSR5 is specified as 0.9 V to 2.4 V (min to max) at V_DS = 10 Vdc and I_D = 662 μAdc. This narrow V_GS(th) window ensures consistent turn-on behavior across production lots and supports precise Class AB/C biasing in radar pulse amplifiers without gate driver overdesign.

MRF6V14300HSR5 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: NI-780S

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: LDMOS

Configuration:: -

Frequency:: 1.4GHz

Gain:: 18dB

Voltage - Test:: 50 V

Current Rating (Amps):: -

Noise Figure:: -

Current - Test:: 150 mA

Power - Output:: 330W

Voltage - Rated:: 100 V

Grade:: -

Qualification:: -

Mounting Type:: Chassis Mount

Supplier Device Package:: NI-780S

MRF6V14300HSR5 FAQ

1.How can I place an order for MRF6V14300HSR5 through Aetrix?

Please submit a Request for Quotation (RFQ) for MRF6V14300HSR5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MRF6V14300HSR5 reliable?

The price and inventory of MRF6V14300HSR5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRF6V14300HSR5 is usually 5 days.

3.What payment methods are accepted for MRF6V14300HSR5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRF6V14300HSR5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MRF6V14300HSR5?

MRF6V14300HSR5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MRF6V14300HSR5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MRF6V14300HSR5?

For technical support, including MRF6V14300HSR5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRF6V14300HSR5 requirements.

6.How does Aetrix verify that MRF6V14300HSR5 is sourced from the original manufacturer or authorized distributors?

All MRF6V14300HSR5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRF6V14300HSR5 meets industry standards.

7.What is the process for return or replacement of MRF6V14300HSR5?

All MRF6V14300HSR5 units undergo pre-shipment inspection (PSI). If there is an issue with MRF6V14300HSR5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MRF6V14300HSR5 part is unused and in its original packaging.

Return procedure for MRF6V14300HSR5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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