NXP Semiconductors MRF6V2010GNR1

Overview

MRF6V2010GNR1 from NXP Semiconductors is a lateral N-channel enhancement-mode RF power MOSFET designed for CW large-signal output and driver stages in 64–450 MHz industrial, medical, and scientific amplifiers. It delivers 10 W CW output at 220 MHz with 23.9 dB power gain, 62% drain efficiency, and operates at 50 Vdc drain supply with 30 mA quiescent current.

For engineers reviewing the MRF6V2010GNR1 datasheet, MRF6V2010GNR1 pinout, MRF6V2010GNR1 application, or MRF6V2010GNR1 equivalent, this page provides verified package mapping (TO-270G-2), thermal resistance (3.0 °C/W), VSWR ruggedness (10:1 @ 50 Vdc/220 MHz/10 W), ESD protection class (HBM Class 2), and series-equivalent impedance data for matching network design.

Technical Context

This device is an unmatched broadband RF power transistor optimized for fixed-frequency or tunable amplifier designs requiring high linearity and ruggedness under mismatched load conditions. Its lateral LDMOS structure supports stable operation up to 225 °C junction temperature and handles 10:1 VSWR without damage at rated power.

Characterized with series-equivalent large-signal impedance parameters (e.g., Z_source = 20 + j25 Ω, Z_load = 75 + j44 Ω at 220 MHz), it enables precise input/output matching network synthesis. The integrated ESD protection and qualified 50 V_DD operation support robust deployment in high-reliability RF power stages.

Key Specifications

Pinout & Package

Package: TO-270G-2 plastic over-molded package with exposed source terminal on backside. Case operating temperature rated to 150 °C; moisture sensitivity level (MSL) 3 (peak reflow 260 °C).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with MRF6V2010N and MRF6V2010NB, the MRF6V2010GNR1 offers identical RF performance and thermal limits but integrates the TO-270G-2 package's optimized thermal pad geometry for improved solder-reflow attachment reliability per AN1907 - making it the preferred choice for automated SMT production of high-power RF modules.

Availability

MRF6V2010GNR1 is available at Aetrix Electronics and suitable for industrial RF heating, medical diathermy systems, and broadcast exciter stages requiring stable component supply, full traceability, and long-term lifecycle support.

Supply support for MRF6V2010GNR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global leader in high-performance RF power solutions, specializing in LDMOS and GaN technologies for industrial, medical, and communications infrastructure.

The MRF6V2010GNR1 belongs to NXP's MRF6V family of broadband RF power MOSFETs engineered for rugged, high-efficiency amplification in fixed-frequency and tunable systems from HF through UHF.

FAQ

What is the maximum drain-source voltage rating for the MRF6V2010GNR1?

The MRF6V2010GNR1 has a maximum drain-source voltage (V_DSS) rating of +110 Vdc, as specified in Table 1 of the official NXP datasheet (Rev. 6, Sept. 2016). This rating applies under static conditions with V_GS = 0 Vdc and ID = 5 mA. Operation above 50 Vdc drain supply requires careful attention to transient voltage spikes and layout parasitics to avoid exceeding this absolute maximum.

Does the MRF6V2010GNR1 require external gate protection?

Yes - while the MRF6V2010GNR1 includes integrated ESD protection (HBM Class 2), it does not eliminate the need for external gate protection in circuit operation. A series gate-stopper resistor (typically 10–100 Ω) and RF choke are mandatory to prevent oscillation and ensure stable biasing. NXP Application Note AN1907 explicitly recommends these components for all MRF6V2010x variants including the MRF6V2010GNR1.

Can the MRF6V2010GNR1 be used at 450 MHz with full 10 W output?

No - the 10 W CW output specification is validated at 220 MHz. At 450 MHz, the MRF6V2010GNR1 maintains broadband functionality but delivers reduced output power (typical P_out ≈ 6–7 W) and lower gain (≈18–19 dB) as shown in Figures 12 and 13. For 450 MHz 10 W applications, NXP recommends verifying performance using the provided Z_source/Z_load values (7.70 + j21.0 Ω / 43.0 + j49.0 Ω) and adjusting matching networks accordingly.

What is the thermal resistance junction-to-case for the MRF6V2010GNR1?

The thermal resistance junction-to-case (R_θJC) for the MRF6V2010GNR1 is 3.0 °C/W, measured at case temperature of 81 °C and 10 W CW output (Table 2, NXP datasheet Rev. 6). This value assumes proper mounting per AN1907 (solder reflow) or AN3263 (bolt-down), with thermally conductive interface material applied to the exposed source pad.

Is the MRF6V2010GNR1 pin-compatible with the MRF6V2010N?

Yes - the MRF6V2010GNR1 and MRF6V2010N share identical pinout (2-pin TO-270 configuration: Gate = Pin 1, Drain = Pin 2, Source = exposed backside) and identical electrical specifications. The only difference is the package variant: TO-270G-2 (MRF6V2010GNR1) vs. TO-270-2 (MRF6V2010N), with the "G" denoting enhanced thermal pad geometry for improved solder-reflow reliability.