NXP Semiconductors MRF6V2010NBR1

Overview

MRF6V2010NBR1 from NXP Semiconductors is a lateral N-channel enhancement-mode RF power MOSFET designed for CW large-signal output and driver applications up to 450 MHz. It delivers 10 W CW output at 220 MHz with 23.9 dB power gain and 62% drain efficiency under 50 Vdc supply and 30 mA quiescent drain current, targeting industrial, medical, and scientific RF amplifier stages.

For engineers reviewing the MRF6V2010NBR1 datasheet, MRF6V2010NBR1 pinout, MRF6V2010NBR1 application, or MRF6V2010NBR1 equivalent, this page provides verified package mapping (TO-272-2), thermal resistance (3.0 °C/W), VSWR ruggedness (10:1 @ 50 Vdc/220 MHz/10 W), ESD protection class (HBM Class 2), and functional test impedance data (Z_source = 20 + j25 Ω, Z_load = 75 + j44 Ω at 220 MHz).

Technical Context

This device operates in common-source configuration with characterized series-equivalent large-signal impedance parameters across 64–450 MHz. Its lateral LDMOS structure supports stable operation at junction temperatures up to 225 °C and is qualified for continuous 50 Vdc drain supply.

It features integrated ESD protection per JESD22-A114 (Class 2), JESD22-A115 (Class A), and JESD22-C101 (Class IV), and is rated for 10:1 VSWR tolerance at full 10 W CW output-enabling robust performance in mismatched antenna systems without external circulators.

Key Specifications

Pinout & Package

Package: TO-272-2 plastic overmolded package with exposed source on backside. Case operating temperature rated to 150 °C; moisture sensitivity level (MSL) 3 (peak reflow 260 °C).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRF6V2010N and MRF6V2010GN, the MRF6V2010NBR1 offers identical RF performance and thermal metrics but uses the TO-272-2 package optimized for high-power bolt-down mounting with enhanced mechanical stability in vibration-prone environments like avionics and mobile medical systems.

Availability

MRF6V2010NBR1 is available at Aetrix Electronics and suitable for industrial RF heating, medical MRI gradient amplifiers, scientific plasma generation, and avionics HF transmitters requiring stable component supply with traceable sourcing and long-term lifecycle support.

Supply support for MRF6V2010NBR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and IoT applications, with deep expertise in RF power technologies since the Freescale acquisition.

The MRF6V2010NBR1 belongs to NXP's MRF6V family of broadband LDMOS RF power transistors, engineered specifically for rugged, high-efficiency CW and pulsed RF amplification in industrial, medical, and scientific equipment operating below 450 MHz.

FAQ

What is the maximum drain-source voltage rating for the MRF6V2010NBR1?

The MRF6V2010NBR1 has a maximum drain-source voltage (V_DSS) rating of +110 Vdc, with a minimum of –0.5 Vdc. This 110 V rating enables reliable operation in 50 V supply systems with significant transient headroom, supporting robust design margins in RF power amplifier output stages where voltage spikes may occur during load mismatch events.

Does the MRF6V2010NBR1 require external ESD protection on the gate?

No, the MRF6V2010NBR1 integrates ESD protection meeting HBM Class 2 (per JESD22-A114), Machine Model Class A (per JESD22-A115), and CDM Class IV (per JESD22-C101). While this eliminates the need for discrete gate protection diodes in most applications, proper ESD-handling procedures during PCB assembly remain essential to preserve long-term reliability of the MRF6V2010NBR1.

What is the thermal resistance junction-to-case for the MRF6V2010NBR1, and how is it measured?

The MRF6V2010NBR1 has a thermal resistance (R_θJC) of 3.0 °C/W, measured at case temperature of 81 °C and 10 W CW output power. This value is derived per AN1955 methodology and reflects the intrinsic thermal path from silicon junction to the external metal flange surface-critical for calculating heatsink requirements and verifying safe operating area in continuous-duty RF amplifiers using the MRF6V2010NBR1.

Can the MRF6V2010NBR1 operate safely at 450 MHz, and what are the key performance metrics at that frequency?

Yes, the MRF6V2010NBR1 is fully characterized up to 450 MHz. At that frequency, typical performance includes Z_source = 7.70 + j21.0 Ω and Z_load = 43.0 + j49.0 Ω, with S₂₁ magnitude of 3.733 (11.4 dB gain) and S₁₁ of 0.798∠–116.9°. These values confirm usable gain and input match, though output power is derated relative to 220 MHz; full 10 W operation is validated at ≤220 MHz per datasheet test conditions.

What mounting method is recommended for the MRF6V2010NBR1 in high-reliability applications?

NXP recommends bolt-down mounting per Application Note AN3263 for the MRF6V2010NBR1 in high-reliability applications. This method ensures optimal thermal contact and mechanical stability, especially under vibration or thermal cycling. The TO-272-2 package's flange design supports torque-controlled screw attachment, and AN3263 specifies interface materials, surface finish, and clamping force to maintain R_θJC = 3.0 °C/W in deployed MRF6V2010NBR1 systems.